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    20MAX Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    LME49720MAX/NOPB Texas Instruments Dual High Performance, High Fidelity Audio Operational Amplifier 8-SOIC -40 to 85 Visit Texas Instruments Buy
    LMH6720MAX/NOPB Texas Instruments Single Wideband Video Op Amp with Shutdown 8-SOIC -40 to 85 Visit Texas Instruments Buy
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    Olimex SNS-TMP-DS18B20-MAXIM

    SNS-TMP-DS18B20-MAXIM
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    DigiKey SNS-TMP-DS18B20-MAXIM Bulk 8 1
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    Texas Instruments LMH6720MAX

    IC AMP CURRENT FEEDBACK 8SOIC
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    DigiKey LMH6720MAX Reel 2,500
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    Rochester Electronics LMH6720MAX 42,500 1
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    Rochester Electronics LLC LMH6720MAX

    VIDEO AMPLIFIER
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    Rochester Electronics LLC LMH6720MAX-NS

    OP AMP, 1 FUNC, BIPOLAR, PDSO8
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    Rochester Electronics LLC LHV720MAX-NOPB

    LHV720MA - OPERATIONAL AMPLIFIER
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    DigiKey LHV720MAX-NOPB Bulk 317
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    20MAX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ct60am

    Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V


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    CT60AM-18B 20MAX. ct60am resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic PDF

    2SD2141

    Abstract: 2SD2141 equivalent FM20 DMS-10
    Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA


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    2SD2141 Pulse10) 10max 20max 1500min 20typ 95typ O220F) 150x150x2 100x100x2 2SD2141 2SD2141 equivalent FM20 DMS-10 PDF

    2SD2141 equivalent

    Abstract: 2SD2141 FM20 DMS-10
    Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA


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    2SD2141 Pulse10) 10max 20max 1500min 20typ 95typ O220F) 120mA 2SD2141 equivalent 2SD2141 FM20 DMS-10 PDF

    DUP3

    Abstract: 40mhz telephone transmitter rf traNsmitter receiver 40mhz DRU5 RF output cordless phone
    Text: TYPE Duplexers for Cordless Phone DRU5 DUP3 コードレス電話用デュプレクサ TYPE DRU5, DUP3 DUP3 For US, Asia DRU5 For US, Asia 11.0Max. 8.8Max. 6.0 8Max. 3.5 12Max. 20Max. 7.6 25.1 19.3 28.2Max. 8.8 φ0.7 2.7 5.6 φ0.7 Unit: mm (Unit: mm) Features


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    12Max. 20Max. 40MHz~ 97MHz 99MHz DUP3 40mhz telephone transmitter rf traNsmitter receiver 40mhz DRU5 RF output cordless phone PDF

    TO-3PL

    Abstract: PRSS0004ZC-A
    Text: Previous Code T3PL RENESAS Code PRSS0004ZC-A MASS[Typ.] 9.8g 20Max Unit: mm 5 6 2 26 φ3.2 1 2 20.6Min JEITA Package Code ⎯ 2.5 Package Name TO-3PL* 1 0.5 5.45 5.45 4.0 3


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    PRSS0004ZC-A 20Max TO-3PL PRSS0004ZC-A PDF

    Untitled

    Abstract: No abstract text available
    Text: 14/25 001-01 / 20030224 / e93_tf.fm EMC Components TF Series Common Mode Choke Coils(Line Filters) for AC Power Supply Toroidal Core Type TF2527VU(VERTICAL TYPE WITH TERMINAL BASE) TYPE SHAPES AND DIMENSIONS/CIRCUIT DIAGRAM 20max. ød (15) 1 4 2 3 TF2527VU-302Y3R0-01


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    TF2527VU 20max. 27max. TF2527VU-302Y3R0-01 25max. TF2527VU-102Y6R0-01 TF2527VU-302Y2R0-01 TF2527VU-102Y3R0-01 TF2527VU-102Y5R0-01 PDF

    MN638S

    Abstract: ic 3A hfe 500
    Text: Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V BR CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min


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    MN638S 10max 20max 1500min O220S 150mA 120mA MN638S ic 3A hfe 500 PDF

    CT60AM-18F

    Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time
    Text: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V


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    CT60AM-18F 20MAX. CT60AM-18F CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time PDF

    2SD1769

    Abstract: No abstract text available
    Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)


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    2SD1769 MT-25 10max 20max Pulse10) 100typ 2SD1769 PDF

    DIODE 10D2

    Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
    Text: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V


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    CT60AM-18F 20MAX. DIODE 10D2 CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1 PDF

    CT60AM-18F

    Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480
    Text: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.


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    CT60AM-18F 20MAX. CT60AM-18F IGBT 900v 60a ct60am18F ct60am DSA007480 PDF

    b514

    Abstract: DNQ10 DNQ10JS
    Text: Power Brushless Motor DNQ10JS Standard Dimensions mm 28 23.3 5.2 3.2 R 5M 28 23.3 IN B51.4 B20 28 23.3 61MAX 4-B4.5 29 B23.7MAX 28 23.3 (15) 5.5 20MAX Component area Typical Data Model DNQ10JS Rated Rated Voltage Speed (V) (min-1) (gf á cm) (mN á m) (mA)


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    DNQ10JS 61MAX 20MAX b514 DNQ10 DNQ10JS PDF

    2SD2141

    Abstract: No abstract text available
    Text: Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat ) fT COB Ratings 10max 20max 330 to 430 1500min 1.5max 20typ 95typ (Ta=25ºC)


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    2SD2141 10max 20max 1500min 20typ 95typ 2SD2141 PDF

    IGBT tail time

    Abstract: IGBT 900v 60a CT90AM-18 MJ 545 transistor
    Text: MITSUBISHI IGBT MITSUBISHI NchNch IGBT CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING Dimensions in mm 5 20MAX. 6 2 φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V


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    CT90AM-18 20MAX. IGBT tail time IGBT 900v 60a CT90AM-18 MJ 545 transistor PDF

    TQFP176

    Abstract: No abstract text available
    Text: TQFP176-P-2424-0.50 1, 25TYP ro en O O, 1 4 5 í8; 045 o CJI ro ro ro en o -j^ i+ o o o o ro i+ i+ o ro o o ro ro 1 + pp □o -i^cn o o e o 00 o 0, 10±0, 05 1, 025±0, 05 1, 20MAX CJI 24, 00±0, 1 26, 0 0 ± 0 , 2 ö" ro CD CD Uniti m ~n


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    TQFP176-P-2424-0 25TYP TQFP176 PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPE 20 6DFSC E8TO N O om Dielectric Fillers TYPE 6DFSC 4 Pole Type Frequency Range: 8 0 0 -1 500MHz Temperature Range: - 40°C + 85°C 20Max. JTU Tolerance: ±0.5 (Unit: mm) 6.5 10.7 * : Depends on Center Frequency, Characteristics fétìtìig 6DFSC-836E-12T


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    500MHz 20Max. 6DFSC-836E-12T 6DFSC-836E-12T 6DFSC-920C-10 6DPK-836E881E-12T. -836E -12TI PDF

    TFBGA56

    Abstract: No abstract text available
    Text: 1. 20MAX - M O . 10 ISI •ij-ULum-u uiu u u u u u — h o . 10ISI OOOOiOO oooolooöo o o _ o _ o {o _ o _ o o _ OOÒOOÓOO oooo|oooo o o o 0 : 6 o o -e 0 0 -e -o - 10780] 104 0 ] 10760] 1


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    P-TFBGA56-0710-0 20MAX TFBGA56 PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPE 6DFSC Dielectric Fitters 7 TYPE 6DFSC 4 Pole Type Frequency Range: 800-1500M Hz Temperature Range: -25 C to +85°C 20Max - Characteristics 6DFSC-836E-11T STANDARD DEVICES SELECTION GUIDE The Part Numbers shown in the table below are standard devices which are


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    800-1500M 20Max 6DFSC-836E-11T 6DFSC-836E-12T PDF

    WDJ36

    Abstract: No abstract text available
    Text: Shanghai Haizhi Trade Co.,Ltd 20max 3 4 + 0.5 1.6+0.l T— IOO 19 + 0. 5 o o o o 8 <X5 0 . 4 + 0.4 1.5 CD LO ¡S CO CO lO ^ L ± 0.3 10<LsS 100 + 0.5 m ma 30<L=S100 + 1.0 mm it 1 2 3 #-%• h m & ih ft # nm ±5" ^Êl mm HI &m WDJ36-1 it!l 111


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    20max WDJ36-1 LsS100 WDJ36 PDF

    Untitled

    Abstract: No abstract text available
    Text: P—TFBGA85—0710—0.80DZ U n it mn 1. 20MAX. [7701 o •0. g6±0. 04 i/i W £ tJ OB. C o Ò o o o o H O O o o o o _o _o o ö o o o o o o o o o o / o o o o o o o o o o 'ö o o o o <p io 'o lo _ fö !o |o :o |o i o o o C) C) o <p O O D o o o o o _eo "o o '


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    kbl00 PDF

    Untitled

    Abstract: No abstract text available
    Text: P—TFBGA48—0608—0.80AZ Uniti mn . 20MAX •4— j, 33±0, 05 ITÖÖ1 ro~4gi ipm oooôôè 1 3X 0 O O O O OOOiOOO _o oplo_o_eo o o]o Ö o' sa ooolooo ooo|ooe- o o o io o e £2 INDEX r Jan.2004


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    P-TFBGA48-0608-0 20MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A


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    CT60AM-18F 20MAX. PDF

    z308

    Abstract: No abstract text available
    Text: P—TFBGA85—0710—0.80CZ U n it mn 1. 20MAX o -D. 33±0. 04 W £ tJ O B . OO oo oooo OOOO o o o o o C H O O O p o o cp ooooioooo o_o_o olo_o o_eo ö o"ö[ö o o o' ooooloooo oooo|oooo oooopoo /o o o o|o o-e-eo o i -e-e- Apr .2004


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    XVW02 z308 PDF

    IGBT CT60AM

    Abstract: CT60AM-18F
    Text: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V


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    CT60AM-18F 20MAX. IGBT CT60AM CT60AM-18F PDF