2SK975
Abstract: 4AK25 SP-10 DSA003638
Text: 4AK25 Silicon N-Channel Power MOS FET Array ADE-208-1207 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting
|
Original
|
4AK25
ADE-208-1207
SP-10
2SK975
4AK25
SP-10
DSA003638
|
PDF
|
ade 728
Abstract: 4AK27 SP-10 DSA003643
Text: 4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 Z 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 1 S 5 D 4
|
Original
|
4AK27
ADE-208-728
SP-10
ade 728
4AK27
SP-10
DSA003643
|
PDF
|
ade 728
Abstract: 4AK27 SP-10 Hitachi DSA00397
Text: 4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 Z 1st. Edition January 1999 Features • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 1 S 5 D
|
Original
|
4AK27
ADE-208-728
SP-10
ade 728
4AK27
SP-10
Hitachi DSA00397
|
PDF
|
4AK19
Abstract: SP-10 ADE-208-727 DSA003643
Text: 4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 Z 1st. Edition Feb. 1999 Features • Low on-resistance N Channel : R DS(on) 0.5 Ω, VGS = 10V, ID = 2.5A R DS(on) 0.6 Ω, VGS = 4V, ID = 2.5A • 4V gate drive devices. • High density mounting
|
Original
|
4AK19
ADE-208-727
SP-10
4AK19
SP-10
ADE-208-727
DSA003643
|
PDF
|
4AM13
Abstract: SP-10 Hitachi DSA00316
Text: 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1211 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.4 , VGS = 10 V, I D = 1.5 A P-channel: RDS(on) ≤ 0.45 , VGS = –10 V, I D = –1.5 A
|
Original
|
4AM13
ADE-208-1211
SP-10
4AM13
SP-10
Hitachi DSA00316
|
PDF
|
4AK20
Abstract: Hitachi motor driver mos die 2SK1300 2SK1305 SP-10 ED 03 Diode DSA003638
Text: 4AK20 Silicon N-Channel Power MOS FET Array ADE-208-1204 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capable of 4 V gate drive
|
Original
|
4AK20
ADE-208-1204
2SK1300,
2SK1305
SP-10
4AK20
Hitachi motor driver
mos die
2SK1300
2SK1305
SP-10
ED 03 Diode
DSA003638
|
PDF
|
4ak19
Abstract: n-channel mos fet 4 V gate SP-10 Hitachi DSA00337
Text: 4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 Z 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices.
|
Original
|
4AK19
ADE-208-727
SP-10
4ak19
n-channel mos fet 4 V gate
SP-10
Hitachi DSA00337
|
PDF
|
Hitachi motor driver
Abstract: 2SK1254 4AK22 SP-10 Hitachi discrete DSA003638
Text: 4AK22 Silicon N-Channel Power MOS FET Array ADE-208-1206 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive
|
Original
|
4AK22
ADE-208-1206
2SK1254
SP-10
Hitachi motor driver
4AK22
SP-10
Hitachi discrete
DSA003638
|
PDF
|
ADE-208-1205
Abstract: Hitachi motor driver SP-10 2SK1302 2SK1307 4AK21 DSA003638
Text: 4AK21 Silicon N-Channel Power MOS FET Array ADE-208-1205 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A • Capable of 4 V gate drive
|
Original
|
4AK21
ADE-208-1205
2SK1302,
2SK1307
SP-10
ADE-208-1205
Hitachi motor driver
SP-10
2SK1302
2SK1307
4AK21
DSA003638
|
PDF
|
4AM11
Abstract: SP-10 Hitachi DSA00316
Text: 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1209 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A
|
Original
|
4AM11
ADE-208-1209
SP-10
4AM11
SP-10
Hitachi DSA00316
|
PDF
|
4AM12
Abstract: SP-10 Hitachi DSA00316
Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1210 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A
|
Original
|
4AM12
ADE-208-1210
SP-10
4AM12
SP-10
Hitachi DSA00316
|
PDF
|
4AK18
Abstract: SP-10 DSA003638
Text: 4AK18 Silicon N-Channel Power MOS FET Array ADE-208-1203 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive
|
Original
|
4AK18
ADE-208-1203
SP-10
4AK18
SP-10
DSA003638
|
PDF
|
"Solenoid Driver"
Abstract: 4AK15 SP-10 DSA003638
Text: 4AK15 Silicon N-Channel Power MOS FET Array ADE-208-1200 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive
|
Original
|
4AK15
ADE-208-1200
SP-10
"Solenoid Driver"
4AK15
SP-10
DSA003638
|
PDF
|
4AK17
Abstract: SP-10 ADE-208-1202 10A6 DSA003638
Text: 4AK17 Silicon N-Channel Power MOS FET Array ADE-208-1202 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A • Capable of 4 V gate drive
|
Original
|
4AK17
ADE-208-1202
SP-10
4AK17
SP-10
ADE-208-1202
10A6
DSA003638
|
PDF
|
|
|
SP100
Abstract: Photosensor
Text: PHOTOSENSOR METRONOME SP-100 2 1 3 4 6 8 7 5 10 • 9 OFF – 1. ON LED 72 OFF 160 • OFF ON • LED • 1. OFF + – • • ON OFF ON 1. 1-1 • 40 ~ 208 0 ·2 ·3 ·4 ·6 5 LED ±2% +23 ° C ON/OFF 2 +5 ° C ~ +35 ° C JIS 30 · SP100 : R6P 2 80 78 (W) x 167 (H) x 52 (D) ·mm 240g
|
Original
|
SP-100
SP100
SP100
Photosensor
|
PDF
|
SP10200S
Abstract: No abstract text available
Text: SP10200S Voltage 200V 10.0 Amp Schottky Barrier Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies and halogen free ITO-220A FEATURES Fast switching for high efficiency Low forward voltage drop High current capability
|
Original
|
SP10200S
ITO-220A
MIL-STD-202
13-Jul-2012
SP10200S
|
PDF
|
SP1040
Abstract: No abstract text available
Text: SP1040 Voltage 40V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES B Low forward voltage drop High current capability High reliability High surge current capability
|
Original
|
SP1040
ITO-220
UL94V-0
MIL-STD-202
31-Aug-2011
SP1040
|
PDF
|
SP10150
Abstract: No abstract text available
Text: SP10150 Voltage 150 V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES Low forward voltage drop High current capability High reliability High surge current capability
|
Original
|
SP10150
ITO-220
UL94V-0
MIL-STD-202
15-Sep
SP10150
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SP1060 Voltage 60V 10 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES B Low forward voltage drop High current capability High reliability High surge current capability
|
Original
|
SP1060
ITO-220
UL94V-0
MIL-STD-202
31-Aug
|
PDF
|
SP10200
Abstract: No abstract text available
Text: SP10200 Voltage 200V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES ITO-220 Low forward voltage drop Low reverse current High current capability
|
Original
|
SP10200
ITO-220
UL94V-0
MIL-STD-202
15-Jul-2011
SP10200
|
PDF
|
SP10100
Abstract: ITO-220
Text: SP10100 VOLTAGE 100 V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 10 0.5 0.2 0.1 3.2 4.5 0.2 2.9 0.3 0.3 1.3 15 0.2 3.7 13Min Low forward voltage drop
|
Original
|
SP10100
ITO-220
13Min
UL94V-0
MIL-STD-202
13-Sep-2010
SP10100)
SP10100
ITO-220
|
PDF
|
SP10100
Abstract: ITO-220
Text: SP10100 VOLTAGE 100 V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 10 0.5 0.2 0.1 3.2 4.5 0.2 2.9 0.3 z 0.3 1.3 15 0.2 3.7 z 13Min z Low forward voltage drop High current capability
|
Original
|
SP10100
ITO-220
13Min
UL94V-0
MIL-STD-202
01-June-2007
SP10100)
SP10100
ITO-220
|
PDF
|
sp10150
Abstract: ITO-220 SP1015
Text: SP10150 VOLTAGE 150 V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 B FEATURES Low forward voltage drop High current capability High reliability
|
Original
|
SP10150
ITO-220
UL94V-0
MIL-STD-202
300us,
14-Sep-2010
SP10150)
sp10150
ITO-220
SP1015
|
PDF
|
SP10100
Abstract: No abstract text available
Text: SP10100 Voltage 100V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES Low forward voltage drop High current capability High reliability High surge current capability
|
Original
|
SP10100
ITO-220
UL94V-0
MIL-STD-202
31-Aug-2011
SP10100
|
PDF
|
