FRL9130R
Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
Text: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRL9130D,
FRL9130R,
FRL9130H
-100V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
FRL9130R
2E12
FRL9130D
FRL9130H
Rad Hard in Fairchild for MOSFET
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PDF
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LD 33 regulator
Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
Text: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A The HEXFET technology is the key to International
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90432C
IRFF330
JANTX2N6800
JANTXV2N6800
MIL-PRF-19500/557
O-205AF)
LD 33 regulator
JANTXV2N6800
IRFF330
JANTX2N6800
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PDF
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2E12
Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL430D,
FRL430R,
FRL430H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRL430D
FRL430H
FRL430R
Rad Hard in Fairchild for MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: SCF2N6851T2 JANTX2N6851 JANTXV2N6851 POWER MOSFET FOR RUGGED ENVIRONMENTS TO-205AF TO-39 DESCRIPTION REF: MIL-PRF-19500/564 • P-Channel -200 Volt < 0.800 Ohms -4 Amp SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliabiity. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be
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SCF2N6851T2
JANTX2N6851
JANTXV2N6851
O-205AF
MIL-PRF-19500/564
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PDF
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IRF 260 N
Abstract: IRFF220 JANTX2N6790 JANTXV2N6790
Text: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International
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Original
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90427D
O-205AF)
IRFF220
JANTX2N6790
JANTXV2N6790
MIL-PRF-19500/555
T0-39
IRFF220,
JANTX2N6790,
IRF 260 N
IRFF220
JANTX2N6790
JANTXV2N6790
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PDF
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2E12
Abstract: FRL230D FRL230H FRL230R 1E14
Text: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL230D,
FRL230R,
FRL230H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRL230D
FRL230H
FRL230R
1E14
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PDF
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IRFF130
Abstract: No abstract text available
Text: PD - 90430C IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF130 BVDSS 100V RDS(on) 0.18Ω ID 8.0A The HEXFET technology is the key to International
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Original
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90430C
IRFF130
JANTX2N6796
JANTXV2N6796
MIL-PRF-19500/557
O-205AF)
electrical252-7105
IRFF130
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s
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Original
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-90428D
O-205AF)
IRFF320
JANTX2N6792
JANTXV2N6792
MIL-PRF-19500/555
O-205AF
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A The HEXFET technology is the key to International
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Original
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90425C
IRFF310
JANTX2N6786
JANTXV2N6786
MIL-PRF-19500/556
O-205AF)
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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Original
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O-205AF)
IRFF9210
-200V
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PDF
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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Original
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IRFF9130
2N6849
O-205AF
-100V
500mJ
O-205AF)
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PDF
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low range photo transistor
Abstract: frl9130 2E12 2N7308D 2N7308H 2N7308R
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 5A, -100V, RDS(on) = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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Original
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FRL9130
2N7308D,
2N7308R
2N7308H
-100V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
low range photo transistor
2E12
2N7308D
2N7308H
2N7308R
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PDF
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FRL230* harris
Abstract: 1E14 2E12 2N7275D 2N7275H 2N7275R FRL230 2N7275
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 5A, 200V, RDS(on) = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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Original
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FRL230
2N7275D,
2N7275R
2N7275H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
FRL230* harris
1E14
2E12
2N7275D
2N7275H
2N7275R
FRL230
2N7275
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PDF
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N-channel enhancement 200V 60A
Abstract: TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R
Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL234D,
FRL234R,
FRL234H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
N-channel enhancement 200V 60A
TC 9310 IC DATA SHEET
1E14
2E12
FRL234D
FRL234H
FRL234R
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PDF
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Untitled
Abstract: No abstract text available
Text: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180^ TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRL130D,
FRL130R,
FRL130H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: W vys S RFL1N12L, RFL 1N15L S e m ico n d ucto r 7 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 120V and 150V RFL1N12L TO -205AF RFL1N12L These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use
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OCR Scan
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RFL1N12L,
1N15L
RFL1N12L
-205AF
RFL1N15IN
RFL1N15L
AN7254
AN7260.
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PDF
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Untitled
Abstract: No abstract text available
Text: 4302271 0053701 m b • HAS 2N6796 2 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features TO-205AF BOTTOM VIEW • 8.0A, 100V • rDS(on = 0 .1 8 « • SOA is Power-Dissipation Limited SOURCE • Nanosecond Switching Speeds
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OCR Scan
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2N6796
O-205AF
2N6796
LH0063
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PDF
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423R
Abstract: f423 IR 423
Text: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE
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OCR Scan
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F420/421/422/423
FF420R/421
/422R
/423R
O-205AF
IRFF420,
IRFF421,
IRFF422,
IRFF423
IRFF420R,
423R
f423
IR 423
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PDF
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Untitled
Abstract: No abstract text available
Text: Government and Space Products International I O R Rectifier Part Number «VOSS RDS on W (H T C=2S°C ^ W # Tj=ipO °C 1 W . Rating Rwls @ T t =25°C ^ Fax on Demand Outline Number HEXFET Power MOSFETs Key Radiation Hardened TQ-205AF (TO-39) P-Channel IRH F9I30
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OCR Scan
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TQ-205AF
F9I30
IRHF9230
JANSR2N7389
JANSR2N7390
90X82
908S2
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 m a r d is FSL130D, FSL130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 8 A ,1 00 V ,rDS oN = 0.230n TCJ-205AF • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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OCR Scan
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FSL130D,
FSL130R
TCJ-205AF
36MeV/mg/cm2
1-800-4-HARRIS
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PDF
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B402-6
Abstract: No abstract text available
Text: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080
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OCR Scan
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O-205AF
O-258AA
FRE160,
2N7300
FRE260,
2N7302
FRE264,
2N7304
FRE460,
2N7306
B402-6
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PDF
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Untitled
Abstract: No abstract text available
Text: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 5A.200V, RDS(on) >0.500Q T0-205AF • Second Generation Rad Hard MOSFET Results From New Design Concept*
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OCR Scan
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FRL230
2N7275D,
2N7275R
2N7275H
T0-205AF
100KRAD
300KRAD
3000KRAD
632UIS
632PH0T0
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PDF
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Untitled
Abstract: No abstract text available
Text: ill H a r r is U U S E M I C O N D U C T O R 2N7311D, 2N7311R 2N731 1H REGISTRATION PENDING Currently Available as FRL9230 D, R, H . • Radiation Hardened P-Channel Power MOSFETs Decem ber 1992 Package Features • 3A, -200V, RDS(on) > 1.300 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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2N7311D,
2N7311R
2N731
FRL9230
O-205AF
-200V,
100KRAD
1000KRAD
3000KRAD
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PDF
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2N7308
Abstract: No abstract text available
Text: H A R R IS SEMI CONDUCTOR REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 5A, -100V, ROS(on) = 0.550n TO-205AF • Second Generation Rad Hard MOSFET Result* From New Design Concepts
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OCR Scan
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FRL9130
2N7308D,
2N7308R
2N7308H
O-205AF
-100V,
100KRAD
300KRAD
1000KRAD
3000KRAD
2N7308
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PDF
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