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    200NS Search Results

    200NS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    HM1-6516B/B Rochester Electronics LLC HM1-6516 - Standard SRAM, 2KX8, 200ns, CMOS Visit Rochester Electronics LLC Buy
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    200NS Price and Stock

    Toshiba America Electronic Components 2SC5200N(S1,E,S)

    TRANS NPN 230V 15A TO3P
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    DigiKey 2SC5200N(S1,E,S) Tube 49 1
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    Mouser Electronics 2SC5200N(S1,E,S) 1,021
    • 1 $2.38
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    EBV Elektronik 2SC5200N(S1,E,S) 21 Weeks 25
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    Farnell 2SC5200N(S1,E,S) Each 554 21 Weeks, 1 Days 1
    • 1 £2.32
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    RS 2SC5200N(S1,E,S) Package 355 5
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    Destaco RPR-63M-200-NS

    PARALLEL GRIPPER; GLADIATOR
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    DigiKey RPR-63M-200-NS Ammo Pack 5
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    Destaco RPR-63M-200-NS-V

    PARALLEL GRIPPER; GLADIATOR
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    Destaco RPR-63M-200-NS-R2

    PARALLEL GRIPPER; GLADIATOR
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    Destaco RPR-63M-200-NS-V-R2

    PARALLEL GRIPPER; GLADIATOR
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    Find more 200NS price and stock on Findchips.com

    200NS Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    200NS10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NS100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NS120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NS140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NS160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NS20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NS40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NS60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NS80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF
    200NSR80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=200A Original PDF

    200NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1R5JH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1R5JH45 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Forward Current : IF AV = 1.5A z Very Fast Reverse−Recovery Time : trr = 200ns (MAX.)


    Original     		PDF 1R5JH45 200ns

    80N10

    Abstract: 80N10Q
    Text: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N10Q 200ns O-247 80N10 80N10Q

    HA7-2520-2

    Abstract: HA2525 HA-2525 HA2-2520-2 HA2-2522-2 HA2-2525-5 HA-2520 HA-2522 ha-2525-5
    Text: HA-2520, HA-2522, HA-2525 Data Sheet February 16, 2009 20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers Features • High Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . 120V/µs • Fast Settling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200ns


    Original     		PDF HA-2520, HA-2522, HA-2525 20MHz, 200ns HA-2525 FN2894 HA7-2520-2 HA2525 HA2-2520-2 HA2-2522-2 HA2-2525-5 HA-2520 HA-2522 ha-2525-5

    Untitled

    Abstract: No abstract text available
    Text: 1GH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFUSED TYPE 1GH46 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 400V z Average Forward Current : IF AV = 1.0A z Very Fast Reverse Recovery Time : trr = 200ns (Max)


    Original     		PDF 1GH46 200ns

    Untitled

    Abstract: No abstract text available
    Text: 1JH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1JH46 SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Forward Current : IF AV = 1.0A Unit: mm z Very Fast Reverse−Recovery Time : trr = 200ns (Max)


    Original     		PDF 1JH46 200ns

    Untitled

    Abstract: No abstract text available
    Text: 1GH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1GH45 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 400V z Average Forward Current : IF AV = 1.0A z Very Fast Reverse Recovery Time : trr = 200ns (Max)


    Original     		PDF 1GH45 200ns

    RH111

    Abstract: No abstract text available
    Text: RH111 Voltage Comparator U W W W U DESCRIPTIO ABSOLUTE The RH111 is a general purpose voltage comparator. The RH111 offers maximum input offset voltage of 3mV and input offset current of 10nA with a typical response time of 200ns. The RH111 can operate from a single 5V supply


    Original     		PDF RH111 RH111 200ns.

    tc 9310

    Abstract: RURU150120
    Text: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial


    Original     		PDF RURU150120 RURU150120 200ns) 200ns tc 9310

    UZ210

    Abstract: P1275
    Text: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI&#39;s access time is 200ns/250ns, and the TMM27512ADI


    OCR Scan     		PDF TMM27512ADI-20, TMM27512ADI-25 TMM27512ADI 200ns/250ns, 200ns 130mA TMM27512ADI. UZ210 P1275

    54256AP

    Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
    Text: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without


    OCR Scan     		PDF TC54256AP/AF TC54256AP/AF 28-pin 200ns TC57256AD TC54256AP/AF. 54256AP TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap

    Untitled

    Abstract: No abstract text available
    Text: SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER <j SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : Vrr{,j=600V . Average Forward Current : If AV =1.5A . Very Fast Reverse-Recovery Time : trr=200ns (Max.) + MAXIMUM RATINGS


    OCR Scan     		PDF 200ns 1R5JH45

    Untitled

    Abstract: No abstract text available
    Text: 2NH45 SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : VRRf.j=1000V . Average Forward Current : If AV =2.0A . Very Fast Reverse-Recovery Time : trr=200ns(Max.) MAXIMUM RATINGS


    OCR Scan     		PDF 2NH45 200ns C60Hz)

    IA317

    Abstract: No abstract text available
    Text: STK12C68 SimTEH CMOS nvSRAM 8K x 8 High Performance AutoStore Nonvolatile Static RAM FEATURES 30,35 and 45ns Access Times 15 mA Ice at 200ns Access Speed Automatic STORE to EEPROM on Power Down Hardware or Software initiated STORE to EEPROM Automatic sro/?£Timing


    OCR Scan     		PDF STK12C68 200ns STK12C68 25SSjf IA317

    1GH46

    Abstract: No abstract text available
    Text: TOSHIBA 1GH46 TOSHIBA FIELD EFFECT TRANSISTOR CMOS A / D CONVERTER 1 G H 46 SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time Vr RM = 400V :F AV = !-0 a trr = 200ns (Max.)


    OCR Scan     		PDF 1GH46 200ns 961001EAA2'

    25LS2521

    Abstract: 25LS244 8051 interface 8155 8251 with 8086 9511A 6259A 8155 programmable peripheral interface 9517A AMZ8536 8253 interface with 8086 Peripheral
    Text: MOS Microprocessor MOS Microprocessor Family Selector Guide 8086/88 8085A 8085A-2 8080A Z8001/2t Z8001/2-A Clock Parted 200ns 320ns 200ns Clock Generator 8284A On-Chip On-Chip 8224 8127 8127 Arithmetic Processing Unit 8087 9511A-1 9512-1 9 5Í1A -4 9512-1


    OCR Scan     		PDF 200ns 320ns 511A-1 517A-4 085A-2 519A-4 259A-5 517A-5 480ns 25LS2521 25LS244 8051 interface 8155 8251 with 8086 9511A 6259A 8155 programmable peripheral interface 9517A AMZ8536 8253 interface with 8086 Peripheral

    Untitled

    Abstract: No abstract text available
    Text: Am9131 •Am91L31 1024 x 4 Static R/W Random Access Memories D I S T I N C T I V E C H A R A C T E R I S T IC S G E N E R A L D E S C R IP T I O N I k X 4 organization Fully static data storage — no refreshing Single + 5 V power supply High-speed — access times dow n to 200ns max.


    OCR Scan     		PDF Am9131 Am91L31 200ns 9131EDC

    Untitled

    Abstract: No abstract text available
    Text: ß lä § L 0M flß 9M f 87C75PF MICROCONTROLLER PERIPHERAL I/O PORT EXPANDER WITH 32Kx8 EPROM • 2 Configurable 8-bit I/O Ports — Open Drain — Quasi-bi-directional — CMOS ■ 32K x 8 EPROM — 200nS Access Time ■ Quick-Pulse Programming Algorithm


    OCR Scan     		PDF 87C75PF 32Kx8 200nS -250V

    idt8m864

    Abstract: IDT7m864 7m864 IDT6116 8M864 idt6116s
    Text: IDT7M864 IDT8M864 6 4 K 8K X 8 C M O S STATIC RA MPAK 64K RAM PAK FEATURES: • Equivalent to JEDEC standard 8K x 8 monolithic RAM • 8,192 x 8 CMOS static RAM module complete w ith decoder and decoupling capacitor _ • High-speed 65 (commercial only) 75/85/120/150/200ns


    OCR Scan     		PDF IDT7M864 IDT8M864 75/85/120/150/200ns IDT6116S Ta-25 idt8m864 7m864 IDT6116 8M864 idt6116s

    HM472114AP-2

    Abstract: HM472114A HM472114A-2 2114L HM472114A-1 HM472114AP-1 HM472114AP2
    Text: H M 472114A -1 ,H M 4 7 2 1 1 4 A -2 , H M 472114A P-1 ,H M 4 7 2 1 1 4 A P -2 1 0 2 4 -word X 4 - bit Static Random Access M em ory Fast Access T i m e . H M 4 72 114 A -1 150ns max. H M 4 7 2 1 1 4 A -2 200ns (m ax.)


    OCR Scan     		PDF HM472114A-1 HM472114A-2, HM472114AP-1 HM472114AP-2 1024-word HM472114A-1 150ns HM472114A-2 200ns 200mW HM472114AP-2 HM472114A 2114L HM472114AP-1 HM472114AP2

    Microchip vk 1103

    Abstract: No abstract text available
    Text: fiW l e « « . 27LV128 M Ie r o o h Ip 128K 16K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance — 200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V


    OCR Scan     		PDF 27LV128 200ns 100fiA 28-pin 32-pin DS11025A-8 Microchip vk 1103

    Untitled

    Abstract: No abstract text available
    Text: & PIC16C5X Microchip EPROM-Based 8-Bit CMOS Microcontroller Series FEATURES High-Performance RISC-like CPU • Only 33 single word instructions to leam • All single cycle instructions 200ns except for program branches which are two-cycle • Operating speed: DC - 20 MHz clock input


    OCR Scan     		PDF PIC16C5X 200ns) 200ns 12-bit DS30015K-page

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS XL28C64B E x txH o n ctin? 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F E A TU R ES • Fast Read A ccess T im es — 120ns, 150ns, 200ns and 250ns ■ Low C M O S P o w er C onsum ption


    OCR Scan     		PDF XL28C64B 150pA 120ns, 150ns, 200ns 250ns 120ns 100pF

    Untitled

    Abstract: No abstract text available
    Text: Fast Settling, Video Op Amp with Disable FEATURES typical • -3dB bandw idth of 200M Hz • 0.05% settling in 12ns • low power, 160mW (40m W disabled) • low distortion, -60dB c at 20M Hz • fast disable (200ns) • differential gain/phase: 0.01% /0.01°


    OCR Scan     		PDF 160mW -60dB 200ns) CLC410 PRP8351 RN55D

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CAT28HT64 Extended Tem perature: 170 °C 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: - 1 50/200ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation: - Active: 25 mA Max. - Standby: 300 nA Max.


    OCR Scan     		PDF CAT28HT64 64K-Bit 50/200ns CAT28HT64 28C66