WE772
Abstract: 200nf capacitor 24UNF awre 36 700nF 100Vdc feedthrough capacitor
Text: New hermetically sealed panel mount filters Introduction Syfer Technology Ltd manufactures quality multilayer ceramic components supplied to a worldwide customer base. Customers utilise Syfer’s components in all types of applications including telecoms, industrial,
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WE772
200nf capacitor
24UNF
awre 36
700nF
100Vdc feedthrough capacitor
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200nf capacitor
Abstract: No abstract text available
Text: Filter Type Hermetic Feedthrough EMI Filter Datasheet SLO* ¼-28 UNF Thread (5.75mm A/F : 8.33mm Round Head) Hermetically Sealed Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR)
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1000hr
-55oC
125oC
97lbf
200nF
P108893)
200nf capacitor
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Untitled
Abstract: No abstract text available
Text: Filter Type Hermetic Feedthrough EMI Filter Datasheet SLO* ¼-28 UNF Thread (5.75mm A/F : 8.33mm Round Head) Hermetically Sealed Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR)
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1000hr
-55oC
125oC
97lbf
P107081)
P107464)
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PDF
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Untitled
Abstract: No abstract text available
Text: DATASHEET 9205B+ GRAY 1. Picture 2. Parameters CAP DVC ACV DCA ACA OHM CAP Diode Test hFE Size Weight Display Low Battery Indication Auto Power Off Range 200mV/2V/20V/200V/1000V 200mV/2V/20V/200V/700V 2mA/20mA/200mA/20A 20mA/200mA/20A 200Ω/2KΩ/20KΩ/200KΩ/2MΩ/20MΩ/200MΩ
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9205B+
200mV/2V/20V/200V/1000V
200mV/2V/20V/200V/700V
2mA/20mA/200mA/20A
20mA/200mA/20A
/200KÎ
/200MÎ
2nF/20nF/200nF/2uF/200uF
DT-9205B+
189mm
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WE772
Abstract: AEC-Q200 BEADS FILTER SFCDP AEC-Q200 EMI FILTER 0.44 uF 250Vac AC capacitor SBSGP SFABL AN0018 MIL-STD-1560A 560nF-1
Text: Surface mount EMI filters Panel mount EMI filters Hermetic panel mount EMI filters EMI Power filters Special filters and assemblies Planar arrays Discoidal multilayer capacitors Varistor filters X2Y - Integrated Passive devices Filters for High-Rel applications
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sbsgp
Abstract: ceramic disc 104 aec capacitors MIL-C-83513 Tubular Pi type capacitor military passive component SFssc AEC-Q200 BEADS FILTER semiconductor metal oxide varistor EN132400 varistor far 10k 150 AN0018
Text: Surface mount EMI filters Panel mount EMI filters Hermetic panel mount EMI filters EMI Power filters Special filters and assemblies Planar arrays Discoidal multilayer capacitors Varistor filters X2Y - Integrated Passive devices Filters for High-Rel applications
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N20Z Power MOSFET 7A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N20Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. This device can also withstand
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7N20Z
7N20Z
7N20ZL-TN3-R
QW-R502-810
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diode 611
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 200V, 22A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide custumers with planar stripe and DMOS technology. This technology is
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22N20
22N20
QW-R502-611
diode 611
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22N20
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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22N20
22N20
QW-R502-611
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MIL-PRF-28800F
Abstract: fuse 10KA Wavetek fuse 10a 100ka Ct232 HD110B HV-231-10 CT236 0-30V HD115B
Text: AC & DC Voltage Ranges 200mV, 2V, 20V, 200V, 1500VDC/1000AC DC Accuracy ±0.1% rdg, ±2dgt AC Accuracy 200mV – ±0.8% rdg, ±4dgt @ 40-500Hz 200V 1000V – ±0.8% rdg, ±4dgt (@50Hz, 60Hz) 200mV-20V – ±1.5% rdg, ±5dgt (@500Hz-5kHz) 200V – ±1.5% rdg, ±5dgt (@500Hz-2kHz)
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200mV,
1500VDC/1000AC
200mV
40-500Hz)
200mV-20V
500Hz-5kHz)
500Hz-2kHz)
60Hz-500Hz)
1500VDC
200mA,
MIL-PRF-28800F
fuse 10KA
Wavetek
fuse 10a 100ka
Ct232
HD110B
HV-231-10
CT236
0-30V
HD115B
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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22N20
22N20
O-220
25pues
QW-R502-611
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N20 Power MOSFET 7A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N20 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. This device can also withstand
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QW-R502-811
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MJ192
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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22N20
O-220
22N20
O-252
QW-R502-611
MJ192
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HFS630
Abstract: No abstract text available
Text: BVDSS = 200 V RDS on typ = 0.34 Ω HFS630 ID = 9 A 200V N-Channel MOSFET TO-220F FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances
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HFS630
O-220F
47max
54typ
HFS630
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HFW640
Abstract: HFI640
Text: BVDSS = 200 V RDS on typ = 0.145Ω HFW640 / HFI640 ID = 18 A 200V N-Channel MOSFET D2-PAK I2-PAK 2 FEATURES 1 1 3 Originative New Design 2 3 HFW640 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFI640 1.Gate 2. Drain 3. Source
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HFW640
HFI640
HFW640
HFI640
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TL72
Abstract: HFP630 TOTO-220
Text: BVDSS = 200 V RDS on typ = 0.34 Ω HFP630 ID = 9 A 200V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ
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HFP630
O-220
OTO-220
54typ
TL72
HFP630
TOTO-220
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SSH45N20A
Abstract: No abstract text available
Text: SSH45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 45 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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SSH45N20A
100oC)
SSH45N20A
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Untitled
Abstract: No abstract text available
Text: SFR/U9230 Advanced Power MOSFET FEATURES BVDSS = -200 V • Avalanche Rugged Technology RDS on = 0.8 Ω ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ID = -5.4 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 µA (Max.) @ VDS = -200V
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SFR/U9230
-200V
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TL 139
Abstract: HFP640 TL139
Text: BVDSS = 200 V RDS on typ = 0.145Ω HFP640 ID = 18 A 200V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.)
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HFP640
O-220
54typ
TL 139
HFP640
TL139
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Untitled
Abstract: No abstract text available
Text: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,
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KSM61N20
O-220
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Untitled
Abstract: No abstract text available
Text: KSM12N20L 200V LOGIC N-Channel MOSFET TO-220 Features • • • • • • • 11.6A, 200V, RDS on = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct
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KSM12N20L
O-220
95MAX.
54TYP
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA27N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area
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FQA27N25
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Untitled
Abstract: No abstract text available
Text: Filter Type Feedthrough EMI Filter Datasheet SFDPP M8 x 0.75 – 6g Thread : 10.00mm Hexagonal Head Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)
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1000hr
-55oC
125oC
25lbf
9400nF
940000pF
P108893)
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f18a
Abstract: No abstract text available
Text: ERFS240A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax. @ Vds = 200V ■ B V dss =
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ERFS240A
IRFS240A
300nF
f18a
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