Untitled
Abstract: No abstract text available
Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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Original
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VRF161
150MHz
30MHz,
150MHz,
MRF151
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PDF
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VK200-4B
Abstract: No abstract text available
Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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Original
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VRF161
150MHz
30MHz,
150MHz,
MRF151
VK200-4B
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PDF
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2SC2652
Abstract: No abstract text available
Text: SILICO N NPN EPITAXIAL PLA N A R T Y P E 2SC2652 2 '3 0MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Unit in m m FEATURES_ . S p e c i f i e d 50V, 2 8 M H z C h a r a c t e r i s t i c s : Output Power : Po=200WpEP : Mi nimu m Gain : Gpe=13dB
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OCR Scan
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2SC2652
200WpEP
150WpeP,
28MHz
28MHz
200Wp
150pF
022AF
2SC2652
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PDF
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2sc2652
Abstract: No abstract text available
Text: TOSHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.)
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OCR Scan
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2SC2652
28MHz
200WpEP
961001EAA2'
2sc2652
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PDF
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2sc2652
Abstract: 50WV 10ID 1S1555 2-13B1A
Text: TO SHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 6 52 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Po = 200WpEp Output Power Power Gain Gp = 13dB (Min.)
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OCR Scan
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2SC2652
30MHz
28MHz
200Wpep
000MHz
001MHz
100mA
961001EAA2'
2sc2652
50WV
10ID
1S1555
2-13B1A
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PDF
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2sc2652
Abstract: 2-13B1A 200WPEP
Text: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency
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OCR Scan
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2SC2652
30MHz
28MHz
200WpEP
--30dB
2-13B1A
100mA,
1S1555
961001EAA2'
2sc2652
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PDF
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2SC2652
Abstract: 10ID 1S1555 50WV
Text: T O S H IB A 2SC2652 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Unit in mm Specified 50V, 28MHz Characteristics Po = 200Wpj]p Output Power Power Gain Gp = 13dB (Min.)
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OCR Scan
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2SC2652
30MHz
28MHz
200Wpep
100mA
961001EAA2'
10ID
1S1555
50WV
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PDF
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