Untitled
Abstract: No abstract text available
Text: SINGLE OUTPUT MICROSIZE HV MODULES 29 V SERIES Vertical, Microsize High Voltage Biasing Supply The vertical, microsize V Series is the ideal solution for applications that require a bias voltage ranging from 0 to 3000V and very small current, at only 0.84in³ 13.8cc . With a footprint under 1in²
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00V-1
IEC-60950-1
5V24-P1-WS
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Untitled
Abstract: No abstract text available
Text: SINGLE OUTPUT MICROSIZE HV MODULES 31 M SERIES Miniature, Microsize High Voltage Biasing Supply The miniature, microsize M Series is the ideal solution for applications that need a biasing voltage ranging from 0 to 3000V and very small current, at only 1.00in³ 16.4cc . At less than 0.5in (12.7mm) in
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00V-1
5M24-P1-WS
IEC-60950-1
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310F
Abstract: Polypropylene capacitor 700V gto 1600v
Text: Medium Power Film Capacitors FPX/FPY RoHS Compliant PROTECTION APPLICATIONS Protection of thyristors. Protection of gate turn-off thyristor (G.T.O.). Clamping (Secondary snubber). Metallized polypropylene dielectric capacitor with controlled self-healing.
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Tempe130
118mm
310F
Polypropylene capacitor 700V
gto 1600v
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W4DC105
Abstract: LP 8029 TR C458 w4dc162 W4DC132 NCT200 Thyristor w4dc162 w4dc162 pm W4DA250 w4da105
Text: Note: The data supplied in the enclosed tables is for general reference only. As data was collected from a number of sources, Richardson Electronics, Ltd. and its affiliates are not liable for its accuracy. Richardson Electronics, Ltd. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Richardson Electronics makes no warranty, representation or guarantee regarding
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comp70
90461435/WF5000/CR
W4DC105
LP 8029
TR C458
w4dc162
W4DC132
NCT200
Thyristor w4dc162
w4dc162 pm
W4DA250
w4da105
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bod ixys
Abstract: IXYS IXBOD
Text: Breakover Diodes Applications ● Transient voltage protection High-voltage switches ● Crowbar ● Lasers ● Pulse generators ● i IH IBO V VH VBO H 1999 IXYS All rights reserved H-1 IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V
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00-1000V
035x2mm)
bod ixys
IXYS IXBOD
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THYRISTOR 3500v
Abstract: No abstract text available
Text: Medium Power Film Capacitors FPX/FPY RoHS Compliant PROTECTION APPLICATIONS Protection of thyristors. Protection of gate turn-off thyristor (G.T.O.). Clamping (Secondary snubber). Metallized polypropylene dielectric capacitor with controlled self-healing.
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118mm
THYRISTOR 3500v
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Untitled
Abstract: No abstract text available
Text: Medium Power Film Capacitors FPX/FPY RoHS Compliant PROTECTION APPLICATIONS Protection of thyristors. Protection of gate turn-off thyristor (G.T.O.). Clamping (Secondary snubber). Metallized polypropylene dielectric capacitor with controlled self-healing.
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118mm
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2850KT
Abstract: 2850MT 1200 RTV 1N5550 1N6515 2850FT RTV-615 scotchcast epoxy potting material diode with piv of 40v
Text: APPENDIX B Diode Thermal Analysis Controlling junction temperature is key to reliable semiconductor package design. High voltage diodes present unique junction temperature problems which must be addressed. In high voltage diodes, heat is generated primarily by:
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1N6515
1N5550
2850KT
2850MT
1200 RTV
1N5550
1N6515
2850FT
RTV-615
scotchcast epoxy
potting material
diode with piv of 40v
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ACR300SG33
Abstract: ACR30 ACR300 AN4839 2000V to 3000V diodes
Text: ACR300SG33 ACR300SG33 Fast Turn-on Asymmetric Thyristor Replaces April 2000 version, DS5081-2.2 DS5081-2.4 August 2000 APPLICATIONS • Capacitor Discharge ■ Pulse Power Applications FEATURES ■ The ACR300SG33 is a high voltage asymmetric thyristor which has exceptionally fast turn-on
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ACR300SG33
DS5081-2
ACR300SG33
700ns
ACR30
ACR300
AN4839
2000V to 3000V diodes
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2a103
Abstract: No abstract text available
Text: Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-. for every break down voltage of VBO > 2000 V please contact us.
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00-1000V
2a103
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IXYS IXBOD
Abstract: bod ixys zener 20 15r h8 diode zener c822c kp 100 thyristor
Text: Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-. for every break down voltage of VBO > 2000 V please contact us.
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00-1000V
IXYS IXBOD
bod ixys
zener 20 15r
h8 diode zener
c822c
kp 100 thyristor
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capacitor poliester 100nf
Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
Text: Contents Page • Selection Guide 02 • Manufacturing process 03/04 • General specifications 05 • Temperature Coefficient curves 06 • Packaging 07 TPCAM0198 • Marking 08 • Taping specifications 09/10 • How to order 11/12 • Class I and SL specifications
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TPCAM0198
5OKB10
B-1050
capacitor poliester 100nf
CAPACITOR 5D 3KV
5d 3kv
kje y4
capacitor 100nF poliester
Thomson csf ceramic capacitor
IEC-384-9
capacitor poliester 10nf
Carimbo ceramic capacitor
5OQ322MAEAA
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FUSE M8 250v G
Abstract: BA100 diode cr6l-50 CR6L-350 FUSE FUJI AHX2915 blown fuse indicator with alarm BLC075-1 CS10F-100 CR2L-300
Text: Low Voltage Fuses BLC, CR and CS types Super Rapid Fuses BLC, CR and CS types Super Rapid Fuses 150–1500 Volts AC 10–4700 Amps • Description The FUJI BLC, CR and CS types are extremely reliable fuses which have been specially developed to provide protection for silicon diodes and
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400A2
2L-260)
FUSE M8 250v G
BA100 diode
cr6l-50
CR6L-350
FUSE FUJI
AHX2915
blown fuse indicator with alarm
BLC075-1
CS10F-100
CR2L-300
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SCDA6
Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Text: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A
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1N5415
1N5420
1N5550
1N5554
1N5614,
1N5616,
1N5618,
1N5620,
1N5622
1N5615,
SCDA6
semtech rectifier bridge
SCH25000
rectifier 400V 5A
Full-Wave Bridge Rectifier
SCBAR4F
sdhd5k
SC3BK4F
SCDA4F
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igbt 100V 5A
Abstract: G01H1202 IGB01N120H2 IKP01N120H2 PG-TO-220-3-1 igbt zvt 006 cr 08a
Text: IGB01N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IGB01N120H2
P-TO-263-3-2
G01H1202
P-TO-263-3-2
igbt 100V 5A
G01H1202
IGB01N120H2
IKP01N120H2
PG-TO-220-3-1
igbt zvt
006 cr 08a
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g01h1202
Abstract: No abstract text available
Text: IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IGP01N120H2
IGD01N120H2
PG-TO-252-3-1
PG-TO-220-3-1
IGD01N120H2
140kHz
g01h1202
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G1H1202
Abstract: g01h1202 igbt 12V 1A
Text: IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IGP01N120H2
IGD01N120H2
PG-TO-252-3-1
PG-TO-220-3-1
IGD01N120H2
140kHz
G1H1202
g01h1202
igbt 12V 1A
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Untitled
Abstract: No abstract text available
Text: IGB01N120H2 HighSpeed 2-Technology C • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IGB01N120H2
P-TO-263-3-2
IGB01N120H2
140kHz
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G03H1202
Abstract: 1200v 3A IGB03N120H2 IKP03N120H2 PG-TO263-3-2
Text: IGB03N120H2 HighSpeed 2-Technology C • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior
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IGB03N120H2
PG-TO263-3-2
G03H1202
G03H1202
1200v 3A
IGB03N120H2
IKP03N120H2
PG-TO263-3-2
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g03h1202
Abstract: No abstract text available
Text: IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IGP03N120H2
IGW03N120H2
PG-TO-247-3-21
PG-TO-220-3-1
15mances.
g03h1202
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TVR diode
Abstract: diode tvr 10 g Zener Diode Glass 50v Zener Diodes 300v s5688 diode 50000v diode identification
Text: 1. IDENTIFICATION SYSTEM 1.1 Z ener D iod es Example 1: U 1 Example 3: Z B 270 ©© © © © § Example 4: U 1 N © © D L 44 A ©©©© © © T . . . . . S (4). . . © . . R ectifiers S5688 J © . . . Specific application diode. (TVR: for televisions. TFR: for strobes.)
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IXYS IXBOD
Abstract: lt 747 bod ixys
Text: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”
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035x2m
IXYS IXBOD
lt 747
bod ixys
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Untitled
Abstract: No abstract text available
Text: For Im e iia ie Assistante, Coolscl Your Local Salesperson 3650 3652 BURR-BROWN Optically-Coupled Linear ISOLATION AMPLIFIERS FEATURES APPLICATIONS • BALANCED INPUT • LARGE COMMON-MODE VOLTAGES ±2000V Continuous 140dB Rejection • • • • • •
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140dB
40V/60Hz
/1000Hrs
15kHz
optically/3652
1-8B8-548W
17313bS
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a900j
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only APPLICATIONS • BALANCED INPUT • LARGE COMMON-MODE VOLTAGES ±2000V Continuous 140dB Rejection • ULTRA LOW LEAKAGE 0.35(lA max at 240V/60HZ 1.8pF Leakage Capacitance • EXCELLENT GAIN ACCURACY 0.05% Linearity
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140dB
40V/60HZ
/1000Hrs
15kHz
17313fciS
a900j
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