Untitled
Abstract: No abstract text available
Text: Product specification 1SV269 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 11.5 Typ. Low Series Resistance:rs = 0.55 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Excellent C-V Characteristics,and Small Tracking Error.
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1SV269
OD-323
C2V/C25V
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1SV269
Abstract: No abstract text available
Text: 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV269
1SV269
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MARKING TE
Abstract: TE marking 1SV269
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV269 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 11.5 Typ. Low Series Resistance:rs = 0.55 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05
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1SV269
OD-323
C2V/C25V
MARKING TE
TE marking
1SV269
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1SV269
Abstract: No abstract text available
Text: 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV269
1SV269
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1SV269
Abstract: No abstract text available
Text: 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV269
1SV269
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1SV269
Abstract: No abstract text available
Text: 20010110 1SV269 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 2V ～ 25V Ta = 27℃
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1SV269
685E-15
00E-06
847E-11
00E-09
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1SV269
Abstract: C25V
Text: 1SV269 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV269 ○ CATV チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C2V/C25V = 11.5 標準 • 直列抵抗が小さい。 : rs = 0.55 Ω (標準)
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1SV269
C2V/C25V
1SV269
C25V
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Untitled
Abstract: No abstract text available
Text: 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.
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1SV269
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1SV269
Abstract: No abstract text available
Text: 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.
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1SV269
1SV269
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SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード
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SCJ0004N
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
SCJ0004N
JDV2S71E
DF2S6.8UFS
015AZ3.3
1ss421
CMG07
CMZ24
CRS06
DF2S5.6SC
DF3S6.8ECT
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MRF581
Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Text: RFݠ8⠜ RF RFׂڦᆌᆩࢅยऺ֩ 20066ሆ ݀քනǖ20066ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ&ጺঢ়RFׂ ० ᅃӲԨ்ࣷۼၠጲम༵ᅜ߀்ڦRF֩ăڼ8Ӳᄺփ૩ྔă்ᅙཁेକ߸ܠएᇀ
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Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
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Variable Capacitance Diodes
Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG02
CRG01
CRG04
CMG06
Variable Capacitance Diodes
1SV283B
2fu smd transistor
bidirectional zener diode
015DZ4
015AZ15
CRS06
smd diode Lz zener
general purpose zener diode 256
CMZ24
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Toshiba TMPA8873
Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6
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SCE0001C
S-167
SCE0001D
Toshiba TMPA8873
TA1343NG
TMPA8891
TMPA8893
tmpa8873
tmpa8859
TC90A96BFG
TB1318FG
TMPA8857
TMPA8853
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marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
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HVD141/142
HZU16
HZU10
HZU18
HZU11
HZU20
HZU12
HZU22
HZU13
HZU24
marking code 62z
philips surface mount zener diode v6
marking 68m sot 23-5
1S2473 equivalent
DIODE ROHM 3pin Marking A7
IPS302
marking 62z SOT23
diode S4 68a
1ss81 diode equivalent
1S2473 DIODE equivalent
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Untitled
Abstract: No abstract text available
Text: 1SV269 TOSHIBA 1 S V2 69 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.55Û (Typ.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV269
C2V/C25V
C2V/C25V
C25V/C28V
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1SV269
Abstract: 847E C25V
Text: 1SV269 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE 1 S V2 6 9 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV269
C2V/C25V
1SV269
847E
C25V
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Untitled
Abstract: No abstract text available
Text: 1SV269 TO SHIBA 1 SV2 6 9 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV269
C2V/C25V
C25V/C28V
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1SV269
Abstract: C25V
Text: TOSHIBA 1SV269 1 SV2 6 9 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV269
C2V/C25V
C25V
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1SV269
Abstract: C25V
Text: TOSHIBA 1SV269 TOSHIBA VARIABLE CAPACITANCE DIODE 1 S V2 6 9 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV269
C2V/C25V
000707EAA2'
1SV269
C25V
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Untitled
Abstract: No abstract text available
Text: 1SV269 TOSHIBA 1 SV2 6 9 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV269
C2V/C25V
C2V/C25V
C25V/C28V
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Untitled
Abstract: No abstract text available
Text: 1SV269 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 6 9 CATV TUNING. High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.55ft (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV269
C2V/C25V
C2V/C25V
C25V/C28V
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EN226
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV269 C A T V TU N IN G . • • • • U n it in m m High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV269
C2V/C25V
C2V/C25V
C25V/C28V
470MHz
EN226
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6685E
Abstract: No abstract text available
Text: 1SV269 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 269 CATV TUNING. High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV269
C2V/C25V
C2V/C25V
6685E
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