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    1SS309 Price and Stock

    Toshiba America Electronic Components 1SS309(TE85L,F)

    DIODE ARRAY GP 80V 100MA SMV
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    DigiKey 1SS309(TE85L,F) Digi-Reel 372,137 1
    • 1 $0.37
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    1SS309(TE85L,F) Cut Tape 372,137 1
    • 1 $0.37
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    • 1000 $0.09325
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    1SS309(TE85L,F) Reel 369,000 3,000
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    Avnet Americas 1SS309(TE85L,F) Reel 20 Weeks 3,000
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    Mouser Electronics 1SS309(TE85L,F) 91,606
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    Verical 1SS309(TE85L,F) 9,000 341
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    1SS309(TE85L,F) 2,957 401
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    1SS309(TE85L,F) 1,497 341
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    1SS309(TE85L,F) 307 107
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    Arrow Electronics 1SS309(TE85L,F) Cut Strips 307 20 Weeks 1
    • 1 $0.2155
    • 10 $0.129
    • 100 $0.073
    • 1000 $0.0551
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    Quest Components 1SS309(TE85L,F) 8,397
    • 1 $0.565
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    Avnet Asia 1SS309(TE85L,F) 24 Weeks 3,000
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    Chip1Stop 1SS309(TE85L,F) Cut Tape 2,957
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    • 10 $0.126
    • 100 $0.0668
    • 1000 $0.0517
    • 10000 $0.048
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    1SS309 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS309 Kexin Ultra High Speed Switching Application Original PDF
    1SS309 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS309 TY Semiconductor Ultra High Speed Switching Application - SOT-153 Original PDF
    1SS309 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS309 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS309 Toshiba Toshiba Shortform Catalog Scan PDF
    1SS309 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS) Scan PDF
    1SS309TE85L Toshiba 1SS309 - DIODE 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS309(TE85L,F) Toshiba 1SS309 - DIODE SWITCH 85V 100MA SMV Original PDF
    1SS309TE85R Toshiba 1SS309 - DIODE 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS309 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS309 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.90V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 0.9pF(typ.) 2 3 Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage


    Original     		PDF 1SS309

    1SS309

    Abstract: No abstract text available
    Text: 1SS309 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS309 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm


    Original     		PDF 1SS309 SC-74A 100mA 1SS309

    marking a2

    Abstract: 1SS309
    Text: Diodes SMD Type Ultra High Speed Switching Applications 1SS309 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.90V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 0.9pF(typ.) 2 3 Absolute M axim um R atings T a = 25


    Original     		PDF 1SS309 marking a2 1SS309

    1SS309

    Abstract: No abstract text available
    Text: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications z Small package : SC-74A z Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS309 SC-74A 1SS309

    1SS309

    Abstract: No abstract text available
    Text: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications Small package : SC-74A Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS309 SC-74A 1SS309

    1ss309

    Abstract: No abstract text available
    Text: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications Unit in mm Small package : SC-74A Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS309 SC-74A 961001EAA2' 1ss309

    1SS309

    Abstract: No abstract text available
    Text: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications l Small package : SC-74A l Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS309 SC-74A 1SS309

    1SS309

    Abstract: No abstract text available
    Text: 1SS309 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 Ultra High Speed Switching Applications z Small package : SC-74A z Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS309 SC-74A 1SS309

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA122 MA123 30MAX ES1100 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
    Text: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35


    OCR Scan     		PDF 1SS309 MA123 E1388 11MIN -16UNF' 48MAX DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC

    628B

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 628B DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 m5x0.8
    Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA123 60MAX- 22MAX HI246 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 m5x0.8

    PC802

    Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803
    Text: 1 74 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) 80 80 300 300 85 85 35 35 35 fe aï V r rm Io ,If* I fm <°C) (nA) I fsm cc> (A) Vpmax IR'JWl m * iS Æ ism tÉ (WJAfc I Rmax fk ñ (V) I F <mA) ( ß A) V f (V) <°C)


    OCR Scan     		PDF 1SS309 MA6S121 MA6S718 100MHz) MA122 MA123 PC802 DAP803 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803

    Untitled

    Abstract: No abstract text available
    Text: 1SS309 T O SH IB A 1 SS309 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 2 .8 - 0 .3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.2 : SC-74A


    OCR Scan     		PDF 1SS309 SS309 SC-74A

    DAP801

    Abstract: DA-6NC DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' * s * y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 25MAX 24MIN 25M1N 25MIN 51IAX 12MIN DAP801 DA-6NC DAP803 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802

    DA-4P

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: 174 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m * iSÆismtÉ (WJAfc I Rmax fk ñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA122 MA123 EI494 DA-4P DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    1SS309

    Abstract: No abstract text available
    Text: TOSHIBA 1SS309 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS309 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-74A : Vjt 3 = 0.90V (Typ.) : trr= 1.6ns (Typ.)


    OCR Scan     		PDF 1SS309 SC-74A 01/uF 961001EAA2' 1SS309

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS309 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS3 09 ULTRA HIGH SPEED SWITCHING APPLICATIONS. U n it in mm +0.2 1 .8 -0.3 + 0.2 .6 • Sm a ll Package : SC-74A • Low Forw ard Voltage : V jr 3 = 0.90V (Typ.) • Fa st Reverse Recovery Tim e :


    OCR Scan     		PDF 1SS309 SC-74A --6V50ns 961001EAA2'

    DAN802

    Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA6S718 100MHz) MA122 MA123 HI629 DAN802 DAP803 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN803 DAP401

    644b

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 644b DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    644b

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 174 - nï m fe aï Vpmax m* iS Æ ism tÉ WJAfc I Rmax fkñ (V I F <mA) ( ß A) V f (V) IR'JWl it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ') *s y * y -y y V r rm Vr (V) (V) (fliA) 80 80 300 300 85 85 35 35 35 Io ,If* I fm <°C) (nA) I fsm cc> (A) <°C)


    OCR Scan     		PDF 1SS309 DAN202KtB IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 644b DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    DA-6NC

    Abstract: PC802 628B 644b 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801
    Text: 174 - - nï m it « s 1SS308 1SS309 D A -3 N D A -3 P D A -4 N * * ' *s y y -y y D A -4 P D A -6 N C D A -6 P C D A -8 N D A -8 P * * * * * y y y •) ') DAN401 D AN 403 DAN 601 DAN 801 D AN 802 n n a D n — — — — — V y Vr V ) (V ) (fliA) 80 80


    OCR Scan     		PDF 1SS309 DAN202KtB IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 DA-6NC PC802 628B 644b DAN-10 DAN401 DAN403 DAN601 DAN801

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241