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    1SS306 Search Results

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    1SS306 Price and Stock

    Toshiba America Electronic Components 1SS306TE85LF

    DIODE ARRAY GP 200V 100MA SC61B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS306TE85LF Cut Tape 4,663 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.1465
    • 10000 $0.1465
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    1SS306TE85LF Digi-Reel 4,663 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.1465
    • 10000 $0.1465
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    1SS306TE85LF Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.12454
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    Mouser Electronics 1SS306TE85LF 23,053
    • 1 $1.97
    • 10 $1.64
    • 100 $1.26
    • 1000 $1.04
    • 10000 $0.829
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    Win Source Electronics 1SS306TE85LF 60,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1192
    • 10000 $0.0968
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    PanJit Semiconductor SS3060HE_R1_00001

    Schottky Diodes & Rectifiers 60V,Schottky,SOD-123HE,3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SS3060HE_R1_00001 5,141
    • 1 $0.33
    • 10 $0.224
    • 100 $0.117
    • 1000 $0.106
    • 10000 $0.071
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    PanJit Semiconductor SS3060HE-AU_R1_000A1

    Schottky Diodes & Rectifiers 60V,Schottky,SOD-123HE,3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SS3060HE-AU_R1_000A1 52
    • 1 $0.42
    • 10 $0.269
    • 100 $0.134
    • 1000 $0.121
    • 10000 $0.089
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    PanJit Semiconductor SS3060HE_R1_10001

    Schottky Diodes & Rectifiers 60V Schottky 3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SS3060HE_R1_10001
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.097
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    PanJit Semiconductor SS3060HE_R2_10001

    Schottky Diodes & Rectifiers 60V Schottky 3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SS3060HE_R2_10001
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.084
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    Find more 1SS306 price and stock on Findchips.com

    1SS306 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS306 Kexin Silicon Epitaxial Planar Type Original PDF
    1SS306 Toshiba Japanese - Diodes Original PDF
    1SS306 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS306 TY Semiconductor Silicon Epitaxial Planar Type - SOT-143 Original PDF
    1SS306 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS306 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS306 Toshiba Toshiba Shortform Catalog Scan PDF
    1SS306 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APLICATIONS) Scan PDF
    1SS306 Toshiba DIODE Scan PDF
    1SS306TE85L Toshiba 1SS306 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS306TE85LF Toshiba 1SS306TE85LF - Diode Switching 250V 0.1A 4-Pin SMQ T/R Original PDF
    1SS306TE85R Toshiba 1SS306 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS306 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS306

    Abstract: No abstract text available
    Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications z Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) z Fast reverse recovery time : trr = 30ns (max) z Small total capacitance : CT = 1.5pF (typ.) z Small package


    Original     		PDF 1SS306 SC-61 1SS306

    1SS306

    Abstract: SMD Marking X1 MARKING A3
    Text: Diodes SMD Type Silicon Epitaxial Planar Type 1SS306 Unit: mm Features Low forward voltage :VF 2 = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 1SS306 100mA 1SS306 SMD Marking X1 MARKING A3

    Untitled

    Abstract: No abstract text available
    Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications l Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) l Fast reverse recovery time : trr = 30ns (max) l Small total capacitance : CT = 1.5pF (typ.) l Small package


    Original     		PDF 1SS306 SC-61 100mA

    1SS306

    Abstract: No abstract text available
    Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications z Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) z Fast reverse recovery time : trr = 30ns (max) z Small total capacitance : CT = 1.5pF (typ.) z Small package


    Original     		PDF 1SS306 SC-61 1SS306

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS306 Unit: mm Features Low forward voltage :VF 2 = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 250 V VR 200 V


    Original     		PDF 1SS306 100mA

    1SS306

    Abstract: No abstract text available
    Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Unit in mm Low forward voltage : VF 2 = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package


    Original     		PDF 1SS306 SC-61 961001EAA2' 1SS306

    1SS306

    Abstract: AP-150 VR200
    Text: 1SS306 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS306 ○ z z z z 超高速度スイッチング用 : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm


    Original     		PDF 1SS306 SC-61 100mA 1SS306 AP-150 VR200

    1SS306

    Abstract: No abstract text available
    Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package


    Original     		PDF 1SS306 SC-61 1SS306

    1SS306

    Abstract: No abstract text available
    Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications l Low forward voltage Unit: mm : VF 2 = 0.90V (typ.) l Fast reverse recovery time : trr = 30ns (max) l Small total capacitance : CT = 1.5pF (typ.) l Small package


    Original     		PDF 1SS306 SC-61 10mstransportation 1SS306

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    Design Considerations for Triggering of Flashlamp

    Abstract: flash trigger transformer LT3438 PERKIN ELMER BGDC0007PKI5700 radio trigger xenon flash perkin elmer cathode kijima KP-98 Flashlamp kijima musen GT5G131
    Text: Application Note 95 March 2004 Simple Circuitry for Cellular Telephone/Camera Flash Illumination A Practical Guide for Successfully Implementing Flashlamps Jim Williams and Albert Wu INTRODUCTION Next generation cellular telephones will include high quality photographic capability. Improved image sensors and


    Original     		PDF cl89-8266 LT3468 an95f AN95-11 AN95-12 Design Considerations for Triggering of Flashlamp flash trigger transformer LT3438 PERKIN ELMER BGDC0007PKI5700 radio trigger xenon flash perkin elmer cathode kijima KP-98 Flashlamp kijima musen GT5G131

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    1SS306

    Abstract: No abstract text available
    Text: 1SS306 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS306 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 —0.90V (Typ.)


    OCR Scan     		PDF 1SS306 SC-61 SC-61 961001EAA2' 1SS306

    Untitled

    Abstract: No abstract text available
    Text: 1SS306 TO SHIBA 1SS306 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. > - 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 = 0.90V (Typ.)


    OCR Scan     		PDF 1SS306 SC-61

    1SS306

    Abstract: No abstract text available
    Text: 1SS306 SILICON EPITAXIAL PLANAR TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in rran . Low Forward Voltage + 0.2 2.9 -0.3 : V f = 0.92V Typ. . Fast Reverse Recovery Time : trr= 60ns(Max.) . Small Total Capacitance : Ct = 2 .2pF(Typ.) . Small Package


    OCR Scan     		PDF 1SS306 SC-61 100mA 1SS306

    Untitled

    Abstract: No abstract text available
    Text: 1SS306 TO SHIBA 1SS306 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 = 0.90V (Typ.) : trr = 30ns (Max.)


    OCR Scan     		PDF 1SS306 SC-61

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS306 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 3 Q6 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 0.2 0.3 + 2.9 : Vp 2 = 0.90V (Typ.) • Low Forward Voltage • Fast Reverse RecoveryTime : • Small Total Capacitance : Ct = 1.5pF (Typ.)


    OCR Scan     		PDF 1SS306 SC-61 961001EAA2'

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P