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    Taiwan Semiconductor 1SS133M-R0G

    DIODE GEN PURP 90V 150MA DO34
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    DigiKey 1SS133M-R0G Reel 10,000 10,000
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    • 100 -
    • 1000 -
    • 10000 $0.01621
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    NKK Switches M2011SS1G01

    SWITCH TOGGLE SPST 0.4VA 28V
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    DigiKey M2011SS1G01 Box 155 1
    • 1 $7.03
    • 10 $6.072
    • 100 $5.2384
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    DComponents AM1SS-1205SZ

    DC DC CONVERTER 5V 1W
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    DigiKey AM1SS-1205SZ Tube 146 1
    • 1 $4.8
    • 10 $4.22
    • 100 $3.709
    • 1000 $3.25989
    • 10000 $3.25989
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    Samtec Inc S1SS-10-28-GF-01.80-L

    MICRO MATE SINGLE ROW DISCRETE W
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    DigiKey S1SS-10-28-GF-01.80-L Bulk 61 1
    • 1 $3.73
    • 10 $3.73
    • 100 $3.73
    • 1000 $3.73
    • 10000 $3.73
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    NKK Switches MB2011SS1W03-CC

    SWITCH PUSHBUTTON SPDT 6A 125V
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    DigiKey MB2011SS1W03-CC Box 53 1
    • 1 $8.08
    • 10 $6.972
    • 100 $6.2884
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    1SS1 Datasheets (418)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS101 Xin Semiconductor SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY Original PDF
    1SS101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS101 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SS101 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS102 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS103 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS104 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS104 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS104 Panasonic Silicon planar type diode. Scan PDF
    1SS104 Toshiba Integrated Circuits for TV Systems Scan PDF
    1SS104 Toshiba General Purpose Silicon Planar Diode Scan PDF
    1SS105 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS105A Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS106 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    1SS106 Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original PDF
    1SS106 Jinan JIFU Semiconductor Diode Schottky Diode 10V 0.03A 2DO-35 Original PDF
    1SS106 Renesas Technology Diode, Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Original PDF
    1SS106 Renesas Technology Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Original PDF
    1SS106 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS106 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    ...

    1SS1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application  Small package : SC-59  Low forward voltage : VF 3 = 0.9V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance


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    PDF 1SS193 SC-59

    marking e3 sot

    Abstract: 1SS190 smd sot23 marking E3
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS190 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF 3 = 0.92 V(Typ.) 0.55 Small Package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)


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    PDF 1SS190 OT-23 marking e3 sot 1SS190 smd sot23 marking E3

    Untitled

    Abstract: No abstract text available
    Text: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA • Case: SOT-23 Plastic


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    PDF 1SS187 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA May-2009, KSYR07

    1SS154

    Abstract: varicap ghz
    Text: 1SS154 SPICE PARAMETER 20020226 SPICE MODEL: DATA FORMAT: SPICE SYMBOL: BERKLEY SPICE2G6 DIODE MODEL MODEL FORMAT - TT(s),EG(eV),XTI(-) FREQUENCY RANGE: f = 0.1 to 3 GHz VOLTAGE RANGE: Va = -5 to 0.4V AMBIENT TEMPERATURE:


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    PDF 1SS154 85deg 26E-09 00E-04 90E-13 75E-08 00E-09 varicap ghz

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS193 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VF 3 = 0.9 V(Typ.) 0.55 Small Package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) +0.05


    Original
    PDF 1SS193 OT-23

    1SS187

    Abstract: No abstract text available
    Text: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


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    PDF 1SS187 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS187

    Switching Diodes

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS184 Features • x x x • • Halogen free available upon request by adding suffix "-HF" Low Forward Voltage


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    PDF 1SS184 OT-23 150mW OT-23 Switching Diodes

    1SS193

    Abstract: No abstract text available
    Text: RECTRON 1SS193 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


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    PDF 1SS193 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS193

    Switching Diodes

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS181 Features x x x • • • 150mW High Speed Switching Diodes 80 Volt Low Forward Voltage Low Leakage Current


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    PDF 1SS181 150mW OT-23 OT-23 100mA 150mW Switching Diodes

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 1SS181 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Fast reverse recovery time :trr=1.6ns Typ. 1 ● Small total capacitance :CT=2.2pF(Typ.) 0.55 ● Low forward voltage. :VF(3)=0.92V(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 • Features


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    PDF 1SS181 OT-23 100mA

    1SS190

    Abstract: No abstract text available
    Text: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


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    PDF 1SS190 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS190

    MARKING toshiba

    Abstract: 1SS190 000707EAA
    Text: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


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    PDF 1SS190 SC-59 MARKING toshiba 1SS190 000707EAA

    1SS133

    Abstract: DIODE 1SS133
    Text: LESHAN RADIO COMPANY, LTD. Switching diode 1SS133 . 300mW DO-34 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V) IFM(mA)


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    PDF 1SS133 300mW DO-34 5000pcs/each 260mm 1SS133 DIODE 1SS133

    marking G3

    Abstract: 1SS196 J-STD-020D
    Text: 1SS196 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic


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    PDF 1SS196 OT-23 OT-23 J-STD-020D 2002/95/EC marking G3 1SS196 J-STD-020D

    1SS176

    Abstract: No abstract text available
    Text: 1SS176 SILICON EPITAXIAL PLANAR DIODE Switching diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage


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    PDF 1SS176 DO-34 1SS176

    1SS133

    Abstract: No abstract text available
    Text: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope • High speed Max. 0.5 Max. 0.45 • High reliability Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band Black Part No. XXX Max. 2.9 XXX Max. 3.9 ST


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    PDF 1SS133 DO-34 DO-35 1SS133

    Untitled

    Abstract: No abstract text available
    Text: 1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : T = 2.2pF (typ.)


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    PDF 1SS184 SC-59 O-236MOD 100mA

    1SS165

    Abstract: Hitachi DSA001653
    Text: 1SS165 Silicon Schottky Barrier Diode for CATV Balanced Mixer ADE-208-397 Z Rev. 0 Oct. 1995 Features • Low capacitance. (C = 1.0pF max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. Cathode band


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    PDF 1SS165 ADE-208-397 DO-34 1SS165 Hitachi DSA001653

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


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    PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


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    PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN

    Untitled

    Abstract: No abstract text available
    Text: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High speed Switching HITACHI ADE-208-298A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.


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    PDF 1SS198 ADE-208-298A 40MHz, 200pF, DO-34

    HITACHI 1SS106

    Abstract: No abstract text available
    Text: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI ADE-208-153A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No.


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    PDF 1SS106 ADE-208-153A DO-35 200pF, HITACHI 1SS106

    Untitled

    Abstract: No abstract text available
    Text: 1SS187 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 1 87 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.92V (Typ.)


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    PDF 1SS187 SC-59

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ÏÏ7 Î>Ë| ñCHTESO GDOTBlb 3 | ~ DISCRETE/OPTO ' 67C -Silicon Planar Typé D ~ T ¿W- 0 °) 09316 ~ 1SS104 Diode Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. FEATURES : . Low Forward Voltage : Vp=1.3V (Max.)


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    PDF 1SS104 100mA