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    1SS TRANSISTOR Search Results

    1SS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1SS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n4033

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE bbS3R31 QOSfilHb 1SS « A P X 2N4030 to 2N4033 » X SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes primarily intended for large signal, low-noise, low-power audio frequency applications for industrial service.


    OCR Scan     		PDF bbS3R31 2N4030 2N4033 2N4031 2N4032 2N4030 2N4032 2n4033

    bfr84

    Abstract: 71672 MSI MS-5 511 MOSFET
    Text: BFR84 J '-SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fieid-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m . tuners,


    OCR Scan     		PDF BFR84 bbS3131 7Z67774. bfr84 71672 MSI MS-5 511 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: t>LS3T31 0024737 T4T « A P X N AMER PHILIPS/DISCRETE BF990AR L7E T> J V. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 R microminiature envelope with source and substrate interconnected, intended for U H F applications, such as U H F television tuners and


    OCR Scan     		PDF LS3T31 BF990AR

    BF982

    Abstract: Transistor BF982 335kW Marking G2 SOT103
    Text: 711Dfl2fcj GGtTSbl S7S M P H I N BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, F M tuners, with 12 V supply voltage.


    OCR Scan     		PDF 711002t, BF982 BF982 Transistor BF982 335kW Marking G2 SOT103

    diode marking code YF

    Abstract: BF992 bf992 m92
    Text: • bts3T3i oo23bia an ■ apx BF992 N AUER P H I L I P S / D I S C R E T E b7E D SILICO N N-CHANNEL DUAL GATE M O S-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF oo23bia BF992 OT143 diode marking code YF BF992 bf992 m92

    2SC2499

    Abstract: 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor
    Text: Video Output Transistors for Video Display Terminal ^ P o j a r # y ' \ ^ ^ Package Description VcEO=10V, IcsO.SA fr=3.5GHz Vceo=18V, lc=0.6A fr=2.5GHz V ceo=100V, lc=0.5A D -P A C K TO-92 MOD '— TO-126 IS (Power-Mold) NPN 2SC3613 NPN 2SC4200 Remarks T0-220(NIS)


    OCR Scan     		PDF 300mA 400MHz 200MHz 2SC2705 2SA1145 2SC4203 O-126 2SC3613 O-220AB T0-220 2SC2499 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor

    PF322D

    Abstract: FCD890 PF222D transistor p02
    Text: - 252- Dual LED -D arlington Transistor w ithout Base Connection LED - & — •7 * b ■ h ^ 2 it in nn hi 2 IÜ S & // // r"-| r"-| Sj j U J L3J L±J «: s # tt £ FC FCD890 * € 2 x m » 1 * ill £ If Vr P d \ Vcb IOL P d2 max max max max max max BY


    OCR Scan     		PDF FCD890 PF222D PF322D PF322D transistor p02

    dilmon

    Abstract: No abstract text available
    Text: GEC P L E S S E Y S i S I M I < <> \ I < l 1 l> H ADVANCE INFORMATION S DS 3305-2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a


    OCR Scan     		PDF SL2364 SL2364 SL2364C 37bfl52E 200mW 37bfl522 0D21D70 dilmon

    PF212D

    Abstract: fcd880 transistor BJ 017 PF322D LITRONIX PF222D FCD885 FCD890 ILD74 MCT66
    Text: - 236- - 252- Dual LED -D arlington Transistor w ithout Base Connection LED - & — •7 * b ■ h ^ 2 it in nn hi 2 IÜ S & // // r"-| r"-| Sj j U J L3J L±J «: s # tt £ FC FCD890 * € 2 x m » 1 * ill £ If Vr P d \ Vcb IOL P d2 max max max max max max BY


    OCR Scan     		PDF TLP504A PF222D PF322D PF212D fcd880 transistor BJ 017 PF322D LITRONIX FCD885 FCD890 ILD74 MCT66

    KTC2026

    Abstract: transistor ktA1046 KTA1046
    Text: SEMICONDUCTOR KTA1046 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. • Complementary to KTC2026. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KTA1046 KTC2026. -50mA, 20HiS' KTC2026 transistor ktA1046 KTA1046

    oc73

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KTK5131V TECHNI CAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES • 2.5 Gate Drive. • Low Threshold Voltage : Vth=0.5 ~ 1.5V. DIM • High Speed. -I— • Small Package.


    OCR Scan     		PDF KTK5131V oc73

    VN2406M

    Abstract: VN2406L
    Text: VN2406 SERIES N-Channel Enhancement-Mode MOS Transistors V BR DSS o (V) r DS(ON) (n ) (A) PACKAGE VN2406D 240 6 1.12 TO-220 VN2406L 240 6 0.22 TO-92 VN2406M 240 6 0.25 TO-237 Performance Curves: VNDB24 TO-237 FRONT VIEW TO-220 PRODUCT SUMMARY PART NUMBER


    OCR Scan     		PDF VN2406 VN2406D VN2406L VN2406M O-220 O-220 O-237 VNDB24 O-237 O-226AA) VN2406M

    MFE2005

    Abstract: MFE2004 P6032 MFE2006
    Text: MFE2004 silicon MFE2005 MFE2006 Silicon N-channel depletion mode (Type A) junction field-effect transistors designed for chopper applications. MAXIMUM RATINGS Rating Symbol Value Unit v DS 30 30 30 10 Vdc Vdc Vdc mAdc Drain-Source Voltage Drain-Gate Voltage


    OCR Scan     		PDF MFE2004 MFE2005 MFE2006 MFE2006 P6032 MFE2005 MFE2004 P6032

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1891 2SD1891 Silicon N P N Tripie-D iffused P lanar Darlington Type Package D im ensions Pow er A m plifier C om plem entary Pair w ith 2SB1251 • Features • Optimum for 3 0 W hi-fi output • High DC c u rre n t gain Iif e : 5000~30000


    OCR Scan     		PDF 2SD1891 2SB1251 hT32fi52

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {D I SC RE TE/OPTO} DEjj ^ 9097250 TOSHIBA DISCRETE/OPTO D SEMICONDUCTOR motor 99D 16989 □□ l b W D Toshiba field effect transistor array S 2 4 8 7 TECHNICAL DATA high -linYdbU power drive switching l iT c oInV n n n e l m os T E N sTiA E cUh ag-MOS)


    OCR Scan     		PDF 00A/ys

    P2TA42

    Abstract: p2t* smd smd transistors 458
    Text: PZTA42 PZTA43 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON EPITAXIAL TRANSISTORS NPN transistors in a microm iniature SMD package SOT-223 . They are prim arily intended fo r use in telephony and professional com munication equipment.


    OCR Scan     		PDF PZTA42 PZTA43 OT-223) PZTA42 P2TA42 p2t* smd smd transistors 458

    transistor BF 245

    Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
    Text: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages


    OCR Scan     		PDF BF245 CB-76 C22ss 300/is transistor BF 245 bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245

    4302

    Abstract: 4304 transistor ESM 30 transistor ESM ESM4302 ESM4303 ESM4304 esm 4303 a 4304
    Text: ESM4302 ESM4303 ESM4304 FIELD EFFECT TRANSISTORS, SILICON, N CHANNEL TRANSISTORS A EFFE T DE CHAMP, SILICIUM, CANAL N LF amplification A m plification BF ro M -< IDSS Plastic case M a x im u m p o w e r d is s ip a tio n Dissipation de puissance maximale 0,5 - 5 mA


    OCR Scan     		PDF ESM4302 ESM4303 ESM4304 CB-76 4302 4304 transistor ESM 30 transistor ESM ESM4304 esm 4303 a 4304

    1SS TRANSISTOR

    Abstract: No abstract text available
    Text: SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J U n it in mm HIGH FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A TIO N S. A U D IO FREQUENCY A M P LIFIER APP LIC A TIO N S. M A X IM U M R ATINGS Ta = 25°C


    OCR Scan     		PDF HN3G01J 1SS TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: M an A M P com pany Radar Pulsed Power Transistor, 30W, 100|is Pulse, 10% Duty 3.1-3.5 GHz PH3135-30M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C om m on Base C on fig u ratio n B ro a d b an d Class C O p e ratio n


    OCR Scan     		PDF PH3135-30M

    DDS-60

    Abstract: NCQ1004 RL 50B
    Text: NCQ1004 N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY Su r fa c e M o u n t Q u a d • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW Rds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMITS 60 ±20 0.46 0.26 ±2 TBD TBD TBD


    OCR Scan     		PDF NCQ1004 100UC DDS-60 NCQ1004 RL 50B

    BF960

    Abstract: transistor BF960 MARKING 4FL
    Text: BF960 J V _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		PDF BF960 BF960 transistor BF960 MARKING 4FL

    1SS SOT-23

    Abstract: SOT-23 d3v
    Text: S EM IC O N D U C T O R KTK5131S TECHNI CAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR U LTR A -H IG H SPEED SW ITC H IN G A PPLIC A T IO N S A N A L O G SW ITCH A PPL IC A T IO N S FEA TU R ES • 2.5 G ate Drive. • Low T hreshold V oltage : V th=0.5 ~ 1.5V.


    OCR Scan     		PDF KTK5131S 1SS SOT-23 SOT-23 d3v

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic


    OCR Scan     		PDF bbS3R31 002fl37b BU2520D bbS3T31