Untitled
Abstract: No abstract text available
Text: 1N914 Vishay Telefunken Fast Switching Diode Features D D D D Fast switching speed High reliability High conductance For general purpose switching applications 94 9367 Order Instruction Type 1N914 Type Differentiation VRRM = 75 V Ordering Code 1N914–TAP
|
Original
|
PDF
|
1N914
1N914
200ake
D-74025
12-Feb-01
|
Untitled
Abstract: No abstract text available
Text: 1N914 Vishay Telefunken Fast Switching Diode Features D D D D Fast switching speed High reliability High conductance For general purpose switching applications 94 9367 Order Instruction Type 1N914 Type Differentiation VRRM = 75 V Ordering Code 1N914–TAP
|
Original
|
PDF
|
1N914
1N914â
12-Feb-01
D-74025
|
1N914
Abstract: 1N914 vishay DO35
Text: 1N914 Vishay Semiconductors Fast Switching Diode Features D D D D Fast switching speed High reliability High conductance For general purpose switching applications 94 9367 Order Instruction Type 1N914 Type Differentiation VRRM = 75 V Ordering Code 1N914–TAP
|
Original
|
PDF
|
1N914
1N914
12-Feb-01
D-74025
1N914 vishay
DO35
|
1N914F
Abstract: 1N916 1N914 transistor data sheet free download diode 1n914 1N914 data sheet MAM246 1N914
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 10 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES
|
Original
|
PDF
|
M3D176
1N914;
1N916
DO-35)
1N916
1N914F
1N914 transistor data sheet free download
diode 1n914
1N914 data sheet
MAM246
1N914
|
1N914
Abstract: 1N914A 1N914B MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N914A; 1N914B High-speed diodes Product specification Supersedes data of 1999 May 26 2003 Jun 06 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B FEATURES DESCRIPTION • Hermetically sealed leaded glass
|
Original
|
PDF
|
M3D176
1N914;
1N914A;
1N914B
DO-35)
1N914,
1N914A
1N914
1N914B
MAM246
|
1N914
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass
|
Original
|
PDF
|
M3D176
1N914
DO-35)
1N914
MAM246
115002/03/pp8
MAM246
|
1N916
Abstract: 1N914 MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES
|
Original
|
PDF
|
M3D176
1N914;
1N916
DO-35)
1N916
1N914
MAM246
|
1N914F
Abstract: 1N916 1N914 MAM246 diode 1N916
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES
|
Original
|
PDF
|
M3D176
1N914;
1N916
DO-35)
1N916
1N914F
1N914
MAM246
diode 1N916
|
diode cross reference 1n914
Abstract: 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass
|
Original
|
PDF
|
M3D176
1N914
DO-35)
1N914
MAM246
DO-35;
SC-40)
diode cross reference 1n914
str 50113
sa marking axial diode
philips 1n914a
marking diode axial
|
SC4075
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass
|
Original
|
PDF
|
M3D176
1N914
DO-35)
1N914
MAM246
01-May-99)
SC4075
|
1N914
Abstract: No abstract text available
Text: FEATURES 1N914 • • • • • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS:
|
Original
|
PDF
|
1N914
1N914
MIL-PRF-19500/116
500mW
MILPRF-19500/116
DO-35
|
D035 package
Abstract: diode D035 D0-35 1N914
Text: 250 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions 1N914 Description JEDEC D0-35 .120 .200 .060 .090 Features 1.00 Min. .018 .022 n PLANAR PROCESS n INDUSTRY STANDARD D0-35 PACKAGE n 250 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 1N914
|
Original
|
PDF
|
1N914
D0-35
100nS
D035 package
diode D035
D0-35
1N914
|
1n914 equivalent
Abstract: 1N914 JANTX IN914 1N914 D0-35
Text: • 1N914 AVAILABLE IN JAN, PER MIL-PRF-19500/116 JANTX, AND JANTXV 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C
|
Original
|
PDF
|
1N914
MIL-PRF-19500/116
1N914
IN914
1n914 equivalent
1N914 JANTX
IN914
D0-35
|
Untitled
Abstract: No abstract text available
Text: 1N914 Qualified Levels: JAN, JANTX, and JANTXV Glass Axial Switching Diode Available on commercial version Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N914 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This small low capacitance
|
Original
|
PDF
|
1N914
MIL-PRF-19500/116
1N914
MIL-PRF-19500/116.
DO-35
T4-LDS-0279,
|
|
|
1N9141
Abstract: No abstract text available
Text: Silicon Switching Diode Applications 1N914 or 1N914-1 DO-35 Glass Package Used in general purpose applications, where performance and switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded BKC's Sigma Bond plating
|
Original
|
PDF
|
1N914
1N914-1
DO-35
LL-34/35
Mil-S-19500/116
1N9141
|
MIL-PRF-19500/116
Abstract: 1N914 D0-35 IN914
Text: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C
|
Original
|
PDF
|
1N914
MIL-PRF-19500/116
1N914
IN914
MIL-PRF-19500/116
D0-35
IN914
|
1n914 equivalent
Abstract: No abstract text available
Text: 1N914 Qualified Levels: JAN, JANTX, and JANTXV Glass Axial Switching Diode Available on commercial version Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N914 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This small low capacitance
|
Original
|
PDF
|
1N914
MIL-PRF-19500/116
1N914
MIL-PRF-19500/116.
DO-35
T4-LDS-0279,
1n914 equivalent
|
Untitled
Abstract: No abstract text available
Text: 1N914, 1N914A, 1N914B Silicon Rectifier Diode Ultra Fast Switch Absolute Maximum Ratings: TA = +25C, Note 1 unless otherwise specified Maximum Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
|
Original
|
PDF
|
1N914,
1N914A,
1N914B
200mA
300mA
400mA
1N914A
100mA
1N914
|
1n914 equivalent
Abstract: d1914 IN414B test diode in4148 DIODE BP M 3101 1N914 1N914-B 1N914-HV 1N914-N
Text: This DIODES COMPLEMENTARY SWITCHING DIODES 1N914-R* 60 Its 1N914-RN 60 1N914-HV 200 1N914-B 75 0.025 @ 20V 0.001 @ 20V 0.025 @ 20V 0.001 @ 20V 0.001 @ 20V 0.25 @ 20V 1.0 @ 75V 5.0 @ 60V V BR Volts Min @IR = 10/iA Cr pf Max. @ ov trr Max. in N-Sec @ lF=10mA; recover
|
OCR Scan
|
PDF
|
1N914
in4148
1N914-N
1N914-R*
1N914-RN
1N914-HV
1N914-B
DF100
100/iA
10/iA
1n914 equivalent
d1914
IN414B
test diode in4148
DIODE BP
M 3101
1N914
1N914-B
1N914-HV
1N914-N
|
1N916
Abstract: 1N914 diode 1N914
Text: Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The 1N914; 1N916 are high-speed switching diodes fabricated in planar tecshnology, and encapsulated in hermetically sealed leaded glass SOD27
|
OCR Scan
|
PDF
|
1N914;
1N916
DO-35)
1N916
1N914 diode
1N914
|
IN914
Abstract: No abstract text available
Text: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV 1N914 PER MIL-PRF-19500/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C
|
OCR Scan
|
PDF
|
1N914
MIL-PRF-19500/116
1N914
20Vdc
IN914
IN914
|
1N917
Abstract: 1n915 1n916b
Text: TYPES 1N914, 1N914A, 1N9MB, 1N915, 1N916. 1N916A, 1N916B. 1N917 SILICON SWITCHING DIODES B U L L E T IN N O . O L -S 7 3 1 1 9 5 4 , M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents mechanical data 1N914 . . . 1N4148 . . . 1N4531
|
OCR Scan
|
PDF
|
1N914,
1N914A,
1N915,
1N916.
1N916A,
1N916B.
1N917
1N914
1N4148
1N4531
1n915
1n916b
|
Untitled
Abstract: No abstract text available
Text: 1N914 AVAILABLE IN JAN, JAN TX, AND JA N T X V 1N914 PER M1L-PRF-195D0/11G SWITCHING DIODE HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C Operating Current: 75 mA @ T ^ = + 25°C
|
OCR Scan
|
PDF
|
1N914
M1L-PRF-195D0/11G
1N914
IN914
|
Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ico n d u cto rs P ro d u ct s p e cifica tio n High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package • High switching speed: max. 4 ns The 1N914; 1N916 are high-speed switching diodes fabricated in planar
|
OCR Scan
|
PDF
|
1N914;
1N916
DO-35)
1N916
1N914
|
