1N8034-GA SPICE
Abstract: No abstract text available
Text: 1N8034-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8034-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
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Original
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1N8034-GA
1N8034-GA
05-SEP-2013
1N8034
46E-17
00E-05
26E-09
1N8034-GA SPICE
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge
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Original
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1N8034-GA
Mil-PRF-19500
1N8034
46E-17
00E-05
26E-09
00E-10
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package • RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge
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Original
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1N8034-GA
Mil-PRF-19500
1N8034
46E-17
00E-05
26E-09
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge
|
Original
|
1N8034-GA
Mil-PRF-19500
1N8034
46E-17
00E-05
26E-09
00E-10
|
PDF
|