1N8030-GA SPICE Search Results

1N8030-GA SPICE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1N8030-GA SPICE Abstract: No abstract text available Text: 1N8030-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8030-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155	Original	1N8030-GA 1N8030-GA. 05-SEP-2013 1N8030-GA 1N8030 57E-18 1N8030-GA SPICE	PDF
Untitled Abstract: No abstract text available Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge	Original	1N8030-GA Mil-PRF-19500 1N8030 57E-18 40E-05 12E-11 00E-10 00E-03	PDF
Untitled Abstract: No abstract text available Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge	Original	1N8030-GA Mil-PRF-19500 1N8030 57E-18 40E-05 12E-11 00E-10	PDF
Untitled Abstract: No abstract text available Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge	Original	1N8030-GA Mil-PRF-19500 1N8030 57E-18 40E-05 12E-11 00E-10	PDF