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    Microchip Technology Inc 1N6639US

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    Microchip Technology Inc 1N6639US-TR

    DIODE GP 75V 300MA D-5D
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    Microchip Technology Inc JAN1N6639US

    DIODE GEN PURP 75V 300MA D-5B
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    Microchip Technology Inc JANS1N6639US

    DIODE GEN PURP 75V 300MA D-5D
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    Microchip Technology Inc JANTX1N6639US

    DIODE GEN PURP 75V 300MA D-5D
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    1N6639US Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N6639US Compensated Devices SWITCHING DIODES Original PDF
    1N6639US Compensated Devices 6.2 Volt, 5 Watt zener diode Original PDF
    1N6639US Microsemi Signal or Computer Diode; Package: D; Original PDF
    1N6639US Microsemi 300 mA 75-100 V 4 ns Computer Switching Diode Original PDF

    1N6639US Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N6639US

    Abstract: 1N6640US 1N6641US
    Text: • 1N6639US THRU 1N6641US AVAILABLE IN JAN, PER MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US JANTX, JANTXV AND JANS • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N6639US 1N6641US MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US 08MIN. 070is IN6639US IN6641US 1N6640US

    Untitled

    Abstract: No abstract text available
    Text: • 1N6639US THRU 1N6641US AVAILABLE INJAN, PER MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US JANTX, JANTXV AND JANS • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N6639US 1N6641US MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US IN6639US IN6641US

    1N6640US JANTX

    Abstract: 1N6639US 1N6640US 1N6641US IN6639US 1N6641US JANTXV
    Text: 1N6639US 1N6640US 1N6641US • 1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N6639US 1N6640US 1N6641US 1N6639US 1N6641US MIL-PRF-19500/609 08MIN. IN6639US IN6641US 1N6640US JANTX 1N6640US IN6639US 1N6641US JANTXV

    1N3595US

    Abstract: 1N5820US 1N6642US microsemi 1N5616US 1N5617US 1N5804US 1N5806US 1N6638US 1N6639US 1N6642US
    Text: Summer 1997 ESA SMT Qualifications Microsemi Ireland has just agreed with the European Space Agency at Noordwiijk, Holland to fully qualify several popular families of Signal Diodes and Power Rectifiers. The qualification work will start immediately and is expected to


    Original     		PDF 1N3595US 1N6639US 1N6643US 1N5616US 1N5820US 1N5806US 1N6638US 1N6642US 1N5815US 1N5617US 1N3595US 1N5820US 1N6642US microsemi 1N5616US 1N5617US 1N5804US 1N5806US 1N6638US 1N6639US 1N6642US

    1N6640US

    Abstract: 1N6641 1N6640 JANTX 1N6640US JANS 1N6639 JANTXV 1N4150 1N6639 1N6639US 1N6640 1N6641US
    Text: 1N6639 1N6640 1N6641 FEATURES • Available in axial leaded and surface mount configurations • Ultra Fast Reverse Recovery Time • Very low Capacitance • Metallurgically Bonded • Non-cavity glass package • Available as JANTX, JANTXV and JANS per MIL-S-19500/609


    Original     		PDF 1N6639 1N6640 1N6641 MIL-S-19500/609 1N4150 1N6639US 1N6640US 1N6640US 1N6641 1N6640 JANTX 1N6640US JANS 1N6639 JANTXV 1N6639 1N6639US 1N6640 1N6641US

    609g

    Abstract: 1N4150 metallurgically JANS1N4150UR-1 1N6640 1N6641 JANS1N6640US 1N6640US 1N6639 1N6639US 1N6641US
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 September 2010. MIL-PRF-19500/609G w/AMENDMENT 1 3 June 2010 SUPERSEDING MIL-PRF-19500/609G 8 July 2009 PERFORMANCE SPECIFICATION SHEET


    Original     		PDF MIL-PRF-19500/609G 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-PRF-19500. 609g 1N4150 metallurgically JANS1N4150UR-1 1N6640 1N6641 JANS1N6640US 1N6640US 1N6639 1N6639US 1N6641US

    1N6640US JANTXV

    Abstract: in6639us
    Text: •1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 >SWITCHING DIODES 1N6639US 1N6640US 1N6641US • NON-CAVITY GLASS PACKAGE ■METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    OCR Scan     		PDF 1N6639US 1N6641US MIL-PRF-19500/609 1N6640US 1N6641US IN6639US 1N6640US JANTXV

    JANS1N6640US

    Abstract: No abstract text available
    Text: Signal/General Purpose Diodes SIG JANTX1N6641US JANTX1N6643 JANTX1N6643U JANTXV1N6640 JANTXV1N6640US JANTXV1N6641 JANTXV1N6641US JANTXV1N6643 JANTXV1N6643U JANS1N6640 JANS1N6640US JAN1N4500 JANTX1N4500 JANTXV1N4500 1N6639 1N6639US 1N6642 1N6642U JANTX1N6639


    OCR Scan     		PDF

    1N6640US

    Abstract: No abstract text available
    Text: 1N6639US THRU 1N6641 US AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N6639US PER MIL-PRF-19500/609 1N6640US SWITCHING DIODES 1N6641US NON-CAVITY GLASS PACKAGE METALLURGiCALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    OCR Scan     		PDF 1N6639US 1N6641 MIL-PRF-19500/609 1N6640US 1N6641US IN6639US IN6641US

    003S5

    Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING


    OCR Scan     		PDF HIL-S-19500/609A MIL-S-19500/609 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-S-19500/231. 1N4150-1 003S5 ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US

    glass diode marking 2U

    Abstract: 37sn 1N6640US 6643U 2U 73 diode marking 2U diode 1N6641
    Text: H M mm Sania Ana, CA ic n o m s e m 1N6639 1N6640 1N6641 i FEATURES Available in axial leaded and surface mount configurations 300mAmp 75-100 Volts 4nsec Computer Switching Diode Ultra Fast Reverse Recovery Time Very low Capacitance Metallurgical^ Bonded Non-cavity glass package


    OCR Scan     		PDF MIL-S-19500/509 1N4150 1N6639 1N6640 1N6641 300mAmp 1N6639US 1N6640US glass diode marking 2U 37sn 6643U 2U 73 diode marking 2U diode 1N6641

    1N6641

    Abstract: No abstract text available
    Text: Micnosemi m m m Santa Ana, CA m 1N6639 1N6640 1N6641 FEATURES Available in axial leaded and surface mount configurations 300mAmp 75-100 Volts 4nsec Computer Switching Diode Ultra Fast Reverse Recovery Time Very low Capacitance Metallurgical^ Bonded Non-cavity glass package


    OCR Scan     		PDF 1N6639 1N6640 1N6641 300mAmp MIL-S-19500/609 1N4150 1N6639US 1N6640US 1N6641