Untitled
Abstract: No abstract text available
Text: 1N6101+JANTXV Diodes Array of Independent Diodes Military/High-RelY @Temp øC (Test Condition) Circuits Per Package8 Diodes Per Circuit1 I(F) Max. (A) Forward Current100m V(RRM) (V) Rep.Pk.Rev. Voltage65 t(rr) Max.(s) Rev. Rec. Time5.0n @I(F) (A) (Test Condition)10m
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1N6101
Current100m
Voltage65
Current25n
StyleTO-116
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MSC1006
Abstract: 1N6101
Text: 1N6101 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • QUALIFIED PARTS LISTING: MIL-PRF-19500/474 Bv > 75V at 5uA
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1N6101
MIL-PRF-19500/474
100nA
100mAdc
10mAdc,
300us
MSC1006
1N6101
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1N6101
Abstract: 1N6101 JAN
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6101 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions
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MIL-PRF-19500/474
1N6101
16-PIN
T4-LDS-0083
1N6101
1N6101 JAN
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1N6101
Abstract: No abstract text available
Text: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION 16-PIN Ceramic DIP WWW. Microsemi . C O M APPEARANCE DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes
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1N6101
16-PIN
1N6101
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1N6510
Abstract: 1N6101 1N6510 JANTX
Text: 1N6101 and 1N6510 JANTX, JANTXV A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)
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1N6101
1N6510
-PRF-19500/474
1N6101
1N6510
1N6510 JANTX
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1N6101
Abstract: 1N6101 JAN
Text: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 16-PIN Ceramic DIP WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes
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1N6101
16-PIN
1N6101
1N6101 JAN
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1N6496
Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Text: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474G
MIL-PRF-19500/474F
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N6496
1N6101
1n6511
1N6506
1N6507
1N5768
1N5770
1N5772
1N5774
1N6100
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1N5770
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474F
MIL-PRF-19500/474E
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N5770
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1N6510 JAN
Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
Text: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has
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SG6100/SG6511
SG6101/SG6510
SG6100/SG6511
SG6101/SG6510
1N6100)
14-PIN
SG6101J
1N6101)
1N6510 JAN
1N6510 LINFINITY
linfinity
1N6100
1N6101
1N6510
1N6511
SG6100
SG6101
SG6511
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1N6100
Abstract: 1N6101
Text: 1N6100 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION 14-PIN Ceramic Flat Pack WWW. Microsemi . C O M APPEARANCE DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering
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1N6100
14-PIN
1N6100
1N6101
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Untitled
Abstract: No abstract text available
Text: 1N6100 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 14-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering
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1N6100
14-PIN
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FDC9268
Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):
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diode sg 8c
Abstract: SG6510D SG6101J 114-PIN 1N6101 JAN sg 88 diode sg6101 6510 1n6511
Text: LIN Doc #; 6100 S G 6 1 0 0 /6 5 1 1 , S G 6 1 0 1 /6 5 1 0 T he I n f i n i t e P o w e r o f ,N M \ I ( D iode I n n o v a t i o n A rray P r o d u c t i o n D ata DESCRIPTION T he SG 6100/SG6511 a n d SG 6101/ SG6510 d io d e arrays are m o n o lith ic,
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6100/SG6511
SG6510
6100/S
6101/SG
SG6511J
SG6510
1N6510)
6101J
14-pin
1N6511)
diode sg 8c
SG6510D
SG6101J
114-PIN
1N6101 JAN
sg 88 diode
sg6101
6510
1n6511
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SG6101J
Abstract: sg6101
Text: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has
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SG6100/SG6511
SG6101/SG6510
16-PIN
SG6101J
1N6101)
14-PIN
SG6101J
sg6101
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