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    1N5822 SMA Search Results

    1N5822 SMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-058SMAX200-002 Amphenol Cables on Demand Amphenol CO-058SMAX200-002 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 2ft Datasheet
    CO-174SMAX200-007 Amphenol Cables on Demand Amphenol CO-174SMAX200-007 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 7ft Datasheet
    CO-316SMAX200-004 Amphenol Cables on Demand Amphenol CO-316SMAX200-004 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 4ft Datasheet
    CO-174SMAX200-003 Amphenol Cables on Demand Amphenol CO-174SMAX200-003 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-316SMAX200-001 Amphenol Cables on Demand Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft Datasheet

    1N5822 SMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE 1N5822

    Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D DIODE 1N5822 1N5820RL 1N5821 1N5821RL 1N5822RL

    Untitled

    Abstract: No abstract text available
    Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers


    Original     		PDF 1N5820-1N5822 1N5820 1N5822 DO-201AD

    1N5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 Surfa5820 1N5821 1N5821

    Untitled

    Abstract: No abstract text available
    Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers


    Original     		PDF 1N5820-1N5822 1N5820 1N5822 DO-201AD 1N5820 1N5821

    half bridge LLC inverter

    Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D half bridge LLC inverter diode 1n5822g 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL

    1N5822RL

    Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D 1N5822RL 1N5820RL 1N5821 1N5821RL

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 SurfaN5820 1N5821 1N5821

    1N5822

    Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820RL

    1N5820 1N5821 1N5822

    Abstract: 1N5820-1N5822 1N5820 1N5821 1N5822
    Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers


    Original     		PDF 1N5820-1N5822 1N5820 1N5822 DO-201AD 1N5820 1N5821 1N5820 1N5821 1N5822 1N5820-1N5822 1N5821 1N5822

    5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

    Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier

    1N5822 PACKAGE

    Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5822 PACKAGE 1N5821 half wave rectifier LLC 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL

    1N5820

    Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G DIODE T28

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D

    1N5820-1N5822

    Abstract: 1N5822 data sheet 1N5400 1N5820 1N5821 1N5822 CBVK741B019 F63TNR semiconductor band color code
    Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers


    Original     		PDF 1N5820-1N5822 1N5820 1N5822 DO-201AD 1N5820-1N5822 1N5822 data sheet 1N5400 1N5821 1N5822 CBVK741B019 F63TNR semiconductor band color code

    1N5822

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D

    1N5820

    Abstract: 1N5821 1N5822 diode schottky 1N5822
    Text: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2


    Original     		PDF 1N5820 1N5822 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 1N5821 1N5822 diode schottky 1N5822

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original     		PDF 1N5820, 1N5821 1N5822 DO-201AD 2002/95/EC 2002/96/EC DO-201AD J-STD-002B JESD22-B102D 08-Apr-05

    1N5822

    Abstract: 1N5822 data sheet 1N5822 PACKAGE epoxy 5000 taitron Schottky Barrier 3A 1N5820 1N5821 JESD22-B102D J-STD-002B
    Text: 3A Schottky Barrier Rectifiers 1N5820 -1N5822 3A Schottky Barrier Rectifiers Features • • • • • • • • • Guardring for overvoltage protection Very small conduction losses Extremely fast switching Low forward voltage drop High forward surge capability


    Original     		PDF 1N5820 -1N5822 DO-201AD J-STD-002B JESD22-B102D 1N5822 1N5822 data sheet 1N5822 PACKAGE epoxy 5000 taitron Schottky Barrier 3A 1N5821 JESD22-B102D

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability


    Original     		PDF 1N5820, 1N5821, 1N5822 22-B106 DO-201AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    1N5820

    Abstract: 1N5821 1N5822 J-STD-002
    Text: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original     		PDF 1N5820 1N5822 22-B106 DO-201AD 2002/95/EC 2002/96/EC 11-Mar-11 1N5821 1N5822 J-STD-002

    1N5822 data sheet

    Abstract: 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original     		PDF 1N5820, 1N5821 1N5822 DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 1N5822 data sheet 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Rectifier 1N5820 to 1N5822 Schottky Barrier Rectifier Features • • • • • • • Guardring for overvoltage protection Very small conduction losses Extremely fast switching Low forward voltage drop High forward surge capability High frequency operation


    Original     		PDF 1N5820 1N5822 DO-201AD J-STD-002B JESD22-B102D

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original     		PDF 1N5820 1N5822 DO-201AD 22-B106 2002/95/EC 2002/96/EC DO-201AD 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original     		PDF 1N5820 1N5822 22-B106 DO-201AD 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A