5W zener diode
Abstract: zener diode 12v 0.5 w ZENER DIODE 8.5 V 5W 1N5365B equivalent 1N5341B diode 1N5352B 1n5354b 5w zener 1n5349b 1N5355B
Text: 1N53xxB 5W Zener Diode .052 1.3 DIA. .048 (1.2) 1.0 (25.4) MIN. .375 (9.5) .335 (8.5) .220 (5.6) DIA. .197 (5.0) 1.0 (25.4) MIN. PRIMARY CHARACTERISTICS VRRM 6.2~200V VF 1.2V TJ max 150°C DO-201AD Dimensions in inches and (millimeters) Features Mechanical Data
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1N53xxB
DO-201AD
DO-201AD
UL94V-0
MIL-STD-202,
5W zener diode
zener diode 12v 0.5 w
ZENER DIODE 8.5 V 5W
1N5365B equivalent
1N5341B diode
1N5352B
1n5354b
5w zener
1n5349b
1N5355B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull
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MRF177/D
MRF177
MRF177M
400part.
MRF177
MRF177/D*
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1N5333 SERIES
Abstract: 1N5333-5388B ipc 1n5351b 1N5333 1N5333B 1N5388B SMBG5333B SMBG5388B SMBJ5388B 5 watt zener
Text: 1N5333B thru 1N5388B Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.
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1N5333B
1N5388B
1N5333-5388B
1N5333 SERIES
ipc 1n5351b
1N5333
1N5388B
SMBG5333B
SMBG5388B
SMBJ5388B
5 watt zener
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j945
Abstract: nippon ferrite MRF177 motorola ups schematic rf push pull mosfet power amplifier 1N5347B ALC 665 MOS FIELD EFFECT TRANSISTOR
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull
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MRF177/D
MRF177
j945
nippon ferrite
MRF177
motorola ups schematic
rf push pull mosfet power amplifier
1N5347B
ALC 665
MOS FIELD EFFECT TRANSISTOR
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1N53388
Abstract: 1N53388B 1N5333B AC POWER ZENERS 6 WATT 5 watt zener zener diode 3 watt a 220 1N5336 diode 1N5349b
Text: 1N5333B thru 1N53388B Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.
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1N5333B
1N53388B
1N5333-5388B
1N53388B
1N53388
AC POWER ZENERS 6 WATT
5 watt zener
zener diode 3 watt a 220
1N5336
diode 1N5349b
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1N5333 SERIES
Abstract: ipc 1n5351b 1N5333 1N5333-5388B 1N5333B 1N5388B MIL-PRF19500 SMBG5333B SMBG5388B SMBJ5388B
Text: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.
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1N5333B
1N5388B,
1N5333-5388B
1N5333 SERIES
ipc 1n5351b
1N5333
1N5388B
MIL-PRF19500
SMBG5333B
SMBG5388B
SMBJ5388B
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Diode 1N5333B
Abstract: "Power over Ethernet"
Text: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.
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1N5333B
1N5388B,
1N5333-5388B
1N5333B/TR8
IEEE802
lrwnapp002/Sourcing/Automation/Automation
CPR/05162011/MSSD/1N5333B
18-May-2011
Diode 1N5333B
"Power over Ethernet"
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Untitled
Abstract: No abstract text available
Text: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.
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1N5333B
1N5388B,
1N5333-5388B
/EMController/Zener/Microsemi/1N5333BE3-T
17-Nov-2011
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BTA136
Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Text: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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05NH45
05NH46
05NU41
05NU42
0R8GU41
5KA10
5KA10A
5KA11
5KA11A
5KA12
BTA136
ft0818mw
SM4007 Panjit
BY288
FT2516NH
FS0802NH
FT0817MH
ft1208MW
ft0618mh
equivalent components of diode her207
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TMS380C16
Abstract: flyback transformer THT pin connections pinout db9 rj45 TMS380 PE65611 ZBF503D-00TA isu ferrite ring 78z022 TMS38054 TMS380C26
Text: Questions should be faxed to the: TMS380 TECHNICAL SUPPORT LINE 713 274-4027 TEXAS INSTRUMENTS Page 2 PREFACE The TMS38054 is designed with a Constant Gain Phase Detector to provide more margin for successful design of a ring interface and to enable operation over unshielded twisted pair.
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TMS380
TMS38054
ZBF503D-00TA
23Z87SM
74AS74
74AS00
74AS04
74BCT244
23Z110
78Z022
TMS380C16
flyback transformer THT pin connections
pinout db9 rj45
PE65611
ZBF503D-00TA
isu ferrite ring
TMS380C26
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation
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MRF177
MRF177
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J945
Abstract: 1N5347B MRF177
Text: Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull
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MRF177/D
MRF177
J945
1N5347B
MRF177
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull
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MRF177/D
MRF177
MRF177
MRF177/D
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MRF177
Abstract: 1N5347B transistor RF S-parameters
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull
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MRF177/D
MRF177
MRF177
1N5347B
transistor RF S-parameters
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BA159 equivalent
Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
Text: Typen - Vergleichsliste Typ Diotec 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5059 1N5059 1N5060 1N5061 1N5062 6A05/G 6A10/G 6A20/G 6A40/G 6A60/G 6A80/G 6A100/G Fam. R R R R R R P600A P600B P600D P600G P600J P600K P600M R R R R R R R 1B005 1B01 1B02
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1A01/G
1A02/G
1A03/G
1A04/G
1A05/G
1A06/G
1N5059
1N5060
BA159 equivalent
B80C1500-1000
BYS26-45
equivalent sb5100
B380C2000/1500
1N5048
BYX55-350
BYS21-45
BYX55-600
SMB358
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BYD74G
Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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5KA10
5KA10A
5KA11
5KA11A
5KA12
5KA12A
5KA13
5KA13A
5KA15
5KA15A
BYD74G
FUR460
diode tfk
18db6a
diode cross reference
FAGOR SM6T33CA
BZY97C
tfk 240
1SMZG06GP
D4SB80Z
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2272 t4
Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz
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44A-01
RF177
MRF177M
MRF177
MRF177M
MRF177
P/RM77
2272 t4
c17 dual mos
1N5347B equivalent
MRF177 equivalent
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J945
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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MarketinC14
10nFD
50Vdc
1N5347B
20Vdc
RF177
J945
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J115 mosfet
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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OCR Scan
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10pFD
50Vdc
1N5347B,
RF177
J115 mosfet
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J141 mosfet
Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance
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OCR Scan
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MRF161,
MRF161
AN215A
J141 mosfet
MRF-161
fet j141
2191F
SELF vk200
k 575
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N-Channel Enhancement Mode MOSFETs D e sig n e d fo r b ro a d b a n d c o m m e rc ia l and m ilita ry a p p lic a tio n s up to 4 0 0 M H z fre q u e n c y range. P rim a rily u sed as d rive rs o r o u tp u t a m p lifie rs in p u s h -p u ll
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OCR Scan
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1N5347B.
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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OCR Scan
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MRF177/D
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MRF161
Abstract: J141 mosfet fet j141
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r
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OCR Scan
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MRF161
MRF161,
MRF161
J141 mosfet
fet j141
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IN5363B
Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Text: Cross Reference Every care has b een taken in compiling this cross referen ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any
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OCR Scan
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03NH45
05NH46
05NU41
05NU42
0R8GU41
5KE10
5KE10Û
5KE100A
5KE100CA
5KE10CCF
IN5363B
IN5361B
P6KEI5CA
IN5956B
TFK S 417 T
IM200Z
in5349b
IN5384B
in5366b
P6KEI5A
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