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    1N505 Search Results

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    1N505 Price and Stock

    Vishay Semiconductors 1N5059TR

    DIODE AVALANCHE 200V 2A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5059TR Cut Tape 42,755 1
    • 1 $0.87
    • 10 $0.541
    • 100 $0.87
    • 1000 $0.24231
    • 10000 $0.22006
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    1N5059TR Reel 35,000 5,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.165
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    New Advantage Corporation 1N5059TR 10,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.196
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    Vishay Semiconductors 1N5059GP-E3-54

    DIODE GEN PURP 200V 1A DO204AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5059GP-E3-54 Cut Tape 27,790 1
    • 1 $0.91
    • 10 $0.566
    • 100 $0.91
    • 1000 $0.25482
    • 10000 $0.23164
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    1N5059GP-E3-54 Reel 20,000 4,000
    • 1 -
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    • 10000 $0.17563
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    HUBER+SUHNER 11_N-50-5-18-103_NH

    11_N-50-5-18/103_NH
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    DigiKey 11_N-50-5-18-103_NH Bulk 50 1
    • 1 $23.24
    • 10 $17.908
    • 100 $14.0275
    • 1000 $11.97922
    • 10000 $11.97922
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    Vishay Semiconductors 1N5059TAP

    DIODE AVALANCHE 200V 2A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5059TAP Ammo Pack 25,000
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    Vishay Semiconductors 1N5059GPHE3-54

    DIODE GEN PURP 200V 1A DO204AC
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    DigiKey 1N5059GPHE3-54 Reel
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    1N505 Datasheets (140)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N505 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N505 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5050 Microsemi Data Book 1983 Scan PDF
    1N5050 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N5050 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5050 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N5050 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5050 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5050A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N5050A Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N5050A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5050A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5051 Microsemi Data Book 1983 Scan PDF
    1N5051 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N5051 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5051 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N5051 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5051 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5051A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N5051A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ...

    1N505 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N5062

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol


    Original
    1N5059---1N5062 DO-41 STD-750 1N5062 PDF

    1n5062g

    Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
    Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


    Original
    1N5059GP 1N5062GP MIL-S-19500 DO-204AC DO-15) 2002/95/EC 2002/96/EC 08-Apr-05 1n5062g DO-204AC JESD22-B102D J-STD-002B 1N5062GP PDF

    1N5059

    Abstract: 1N5060 1N5061 1N5062 DO-204AP
    Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere * D TE FEATURES ♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA


    Original
    1N5059 1N5062 MIL-S-19500 DO-204AP DO-204AP 50mVp-p 1N5060 1N5061 1N5062 PDF

    1N5062 diode

    Abstract: 1N5060 1N5061 1N5061 vishay
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original
    1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode 1N5061 vishay PDF

    1n5062 equivalent

    Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55
    Text: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 1N5059 BYW53 1N5060


    Original
    BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5059 diode 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 PDF

    DIODE 1N5060

    Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original
    1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 18-Jul-08 DIODE 1N5060 1n5060v 1N5060 Sinterglass 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode PDF

    1n5060

    Abstract: 1N5062 1N5061 1N5059
    Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,


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    1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062 PDF

    1n5060

    Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original
    1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode DIODE 1N5060 1N506 PDF

    1n5062 equivalent

    Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
    Text: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 1N5059 BYW53 1N5060


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    BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56 PDF

    1N5060GP

    Abstract: No abstract text available
    Text: 1N5059GP THRU 1N5062GP Glass Passivated Junction Rectifier Reverse Voltage 200 to 800 V Forward Current 1.0 A DO-204AC DO-15 Features 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.


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    1N5059GP 1N5062GP DO-204AC DO-15) MIL-S-19500 50mVp-p 1N5060GP PDF

    Untitled

    Abstract: No abstract text available
    Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 1N5059


    Original
    BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current


    Original
    1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    1N5059

    Abstract: 1N5062 1N5060 1N5061
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER FEATURES Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand


    Original
    1N5059---1N5062 DO-15, 39gram 1N5059 1N5062 1N5060 1N5061 PDF

    1n5060v

    Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original
    1N5059 1N5062 OD-57 MIL-STD-750, 1N5059 OD-57 1N5060 1N5061 D-74025 1n5060v iSO 15765 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction


    Original
    1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP 22-B106 DO-204AC DO-15) AEC-Q101 2002/95/EC. 2002/95/EC PDF

    1N5062

    Abstract: 1N5059 1N5060 1N5061
    Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for general


    Original
    1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rectifiers, General purpose Continued Io (AMPS) 1.5 1.0 @ TA (°C) 75 55 75 70 75 IFSM (AMPS) 50 50 50 50 50 / I CASE DO-41 GPR-1A VRRM (VOLTS) 50 1N5391 100 200 1N5059 1N5614 CPR1-010 1N5392 CR1-010 CPR1-020 1N5393 CR1-020 300 400 1N5394 1N5060 CPR1-040


    OCR Scan
    DO-41 1N5391 CPR1-010 1N5059 CR1-010 CPR1-020 1N5614 1N5392 1N5393 CR1-020 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1 . 0 Ampere DO-2Q4AC FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically


    OCR Scan
    1N5059GPTHRU 1N5062GP MIL-S-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 200 to 800 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ 1.0 Ampere oper­ ation at Ta=75°C with no thermal runaway 'f e


    OCR Scan
    1N5059 1N5062 D0-204AP MIL-S-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere DO-2Q4AC S FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^


    OCR Scan
    1N5059GPTHRU 1N5062GP MIL-S-19500 1N5059GFTHRU PDF

    1ns061

    Abstract: No abstract text available
    Text: 1N5059GP THRU 1N5062GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 800 Volts Current - 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0


    OCR Scan
    1N5059GP 1N5062GP 1N5059 1N5062 DO-15 MIL-S-19500 1ns061 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL SEMICONDUCTOR, INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed • G lass Passivated cavity-free junction


    OCR Scan
    1N5059 1N5062 b-2233 1N5059 PDF

    In5062

    Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
    Text: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com­


    OCR Scan
    43Dgg71 1N5059, 1N5060 1N5061, 1N5062 MIL-STD-19500 C/10a/ 1N5060, In5062 in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AP ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation atTA=75°C with no thermal runaway ♦ Typical Ir less than 0.1 jaA


    OCR Scan
    1N5059 1N5062 MIL-S-19500 D0-204AP PDF