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    1N4606 Price and Stock

    ROHM Semiconductor 1N4606T-73

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    Quest Components 1N4606T-73 2,464
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    ITT Interconnect Solutions 1N4606

    RECTIFIER DIODE,85V V(RRM),DO-35
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    Quest Components 1N4606 20
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    UNKNOWN 1N4606

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    Component Electronics, Inc 1N4606 45
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    Texas Instruments 1N4606

    RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
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    Vyrian 1N4606 205
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    1N4606 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N4606 APD Semiconductor Planar Diodes Scan PDF
    1N4606 APD Semiconductor Planar Diodes, DO-35 Case Scan PDF
    1N4606 General Diode Silicon Switching Diode Scan PDF
    1N4606 General Electric Semiconductor Data Book 1971 Scan PDF
    1N4606 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N4606 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4606 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4606 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N4606 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N4606 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N4606 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4606 Panasonic Silicon epitaxial planar type diode. Scan PDF
    1N4606 ROHM Ultra High Speed Switching Diodes, DO-35 Scan PDF
    1N4606 Semitronics Silicon Diodes Scan PDF
    1N4606 Texas Instruments Discrete Devices 1978 Scan PDF

    1N4606 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H I B A -CDISCRETE/OPTOÏ 9097250 TOSH I BA <D ISCRETE/OPTO — - ,67C 092 94 Silicon Epitaxial Planar Type*_ D 'T~03 ~Q< S Î 1N4606 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.


    OCR Scan     		1N4606 DO-35 SC-40 100mA 200mA 250mA 400mA PDF

    1N4448R

    Abstract: No abstract text available
    Text: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table


    OCR Scan     		1N4148 1N914 1N4150 1N4153 1N4448 1N4606 DO-35 1N4148R 1N4448R PDF

    UDZ6.2B

    Abstract: 1SS142 RLZ5243B mtz 9.1 j
    Text: Index Index 1SR35-400A 1SR124-400A 1SR139-400 1SR139-600 1SR 153-400 1SR154-400 1SR155-400 1SR156-400 1SR 159-200 1N914 58 1N916 58 1N4004A 133 1N4148 58 1N4150 58 1N4153 58 1N4448 58 1N4531 63 1N4532 63 1N4533 63 1N4534 63 1N4536 63 1N4606 58 4 1N5000B 1N5230B


    OCR Scan     		1N914 1N916 1N4004A 1N4148 1N4150 1N4153 1N4448 1N4531 1N4532 1N4533 UDZ6.2B 1SS142 RLZ5243B mtz 9.1 j PDF

    1n4148

    Abstract: 1n916 1N4606 1N4150 diode 1N916 1n4148 general diode 1n4153 914-R
    Text: 1N4148 1N914 1N916 1N4150 1N4153 1N4448 1N4606 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 . 5 ± 0.1 Features • available in DO-35 package


    OCR Scan     		1N4148 1N914 1N916 1N4150 1N4153 1N4448 1N4606 DO-35 1n916 1N4606 diode 1N916 1n4148 general diode 1n4153 914-R PDF

    1N4007 TOSHIBA

    Abstract: diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
    Text: 9097250 T OS H I B A CD I S C R E T E / O P T O > TOSHIBA iDISCRETE/0PT0> 90D 16494 D Tzòt~ ts DE l'iO'iTSSO 001b4TM 7 T 'O -b 'O ? Diodes Switching Diode DO-35 VB(V) 2 5 (3 0 ) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B


    OCR Scan     		001b4TM DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4007 TOSHIBA diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount PDF

    IN5062

    Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
    Text: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B


    OCR Scan     		DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4447 IN5062 IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode PDF

    1N4606

    Abstract: No abstract text available
    Text: TYPES 1N4606 THRU 1N4608 SILICON SWITCHING DIODES B U L L E T I N NO. D L - S 739271, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST H IG H -C U R R E N T C O R E -D R IV E R SW IT C H IN G D IO D E S • Rugged Double-Plug Construction •mechanical data


    OCR Scan     		1N4606 1N4608 PDF

    ultra low drop, high current diode

    Abstract: 1N4606 ultra low forward voltage diode ultra low drop forward voltage diode
    Text: 7 ô 2 flcm ÜDÜfiT?! 047 H R H r i noNm Page Specification Prodi Ü ïtra high speed switching diode Type 1. PRODUCTS ] ol 2 1N46 0 6 U ltra high Speed Switching Diodes Silicon E p itax ial Planar 2. TYPE 3. APPLICATION 1N4606 U ltra high speed switching


    OCR Scan     		1N4606 DO-35) 600mA 200mA 250mA 4000aA 500mW 100mA ultra low drop, high current diode 1N4606 ultra low forward voltage diode ultra low drop forward voltage diode PDF

    1N4606

    Abstract: TOSHIBA 1N4606 toshiba t5c
    Text: TOSHIBA {D IS CR ETE /OP TO} 9097250 TOSHIBA <DISCRETE/OPTO> — 67C 092 94 . Silicon Epitaxial Planar Type- D 7~~£>3-Q 1N4606 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		-CDISCRETE/0PT03- f-03-0^ 1N4606 3C-40 100mA 200mA 250mA 400mA 1N4606 TOSHIBA 1N4606 toshiba t5c PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    1N34A reverse recovery

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge


    OCR Scan     		1N34A 1N60A 1N128A 1N198A 1N251 1N270 1N277 1N695A 1N772A 1N933 1N34A reverse recovery PDF

    SS321

    Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 D07 15 SS322 SS337 DT230A HPIXP2350ADT PDF

    FD100

    Abstract: 1N408 FD600 N4376 1N4148 JANTX 1n4376 equivalent 1N5317 1N916B 1N4086 1n916 equivalent
    Text: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE *RR Bv C Package If pF Equivalent mA MAX Package .75 0.8 DO-7 DO-7 VF ns VOLTS nA •r @ TYPE M AX MIN MAX @ FD700 0.70 30 50 @ 15 1N4244 0.75 20 100 @ 1 N4376 0.75 20 100 1N4376 JAN 0.75 20 FD777


    OCR Scan     		DO-7/DO-35 FD700 1N4244 N4376 51N4152 1N4533 1N3600 1N914 1N914A 1N914B FD100 1N408 FD600 N4376 1N4148 JANTX 1n4376 equivalent 1N5317 1N916B 1N4086 1n916 equivalent PDF

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching Diodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that


    OCR Scan     		76S6t DO-35 025mA 1N4532 1N4531 1N4533 1N4S34 1N4536 PDF

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent PDF

    AMERICAN POWER DEVICES 1n914

    Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
    Text: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V


    OCR Scan     		DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619 1N890 1N914 AMERICAN POWER DEVICES 1n914 1N5209 1N3064 PDF

    1S2473

    Abstract: 1SS278 RB721Q 1SS252 1N3606 1SR35-100A 1SS139 LTZ-MR15 RB015T-40 LTZ-MR15 LED
    Text: Diodes Quick reference I Molded Application Vr V MSR ( ^ 2 .5 ) I SIP9Pin j I TO-220FD 35 High-speed Ultra High-speed Low-leakage High-voltage ^ P a g e .1 6 0 ea Glass types Package I DO-35 M 1.8) Part No. 1SS2787 CD DO-34 (<>1.8) USD ( ¿ 1 .8 ) DO-41 ! ¿2.7)


    OCR Scan     		O-220FD DO-35 1SS2787 1S2473 1S2472 1S2471 1SS41 1SS94 1SS93 1SS92 1SS278 RB721Q 1SS252 1N3606 1SR35-100A 1SS139 LTZ-MR15 RB015T-40 LTZ-MR15 LED PDF

    1SA153-100

    Abstract: RB7210 1ss135 axial 1SS291 1S2473 1SS135 DO-41 package 1N4148 1SR139-600 1SS142 LTZ-MR15
    Text: RDNVTI The Class and Basic Ordering Units for Standard and Semi-standard Products •P le a s e note the following when placing an order. The quantity in an order must be in multiplies of the basic order unit. •R e m a rk s : Standard products O : Semi-standard products


    OCR Scan     		DAP209 DAN208 DAP208 DAN001 DAP601 DA216 DAN215 DAP215 DA210S DA218S 1SA153-100 RB7210 1ss135 axial 1SS291 1S2473 1SS135 DO-41 package 1N4148 1SR139-600 1SS142 LTZ-MR15 PDF

    A114D

    Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
    Text: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 A114D A114F DT230B DT230F STB-568 GER4007 a114n PDF

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


    OCR Scan     		1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching PDF

    1s5355

    Abstract: 1N4148 SMD LL-34 1N914 CJ 4148 1N4148F ISS356 KT106 4152J ROHM 1SS292 SM 4151 ROHM RLS
    Text: — K /D io d e s • « * Ä m m ¿i. • m m m & • s * 3 S * ; í j & í í - i é • îit/^ coxfoî,—ÆcoÂfflA'oZ'^ticu it= äfc> - ì ì X c Fi L Î LTl±, *HU í-3±á4± Ì X-ffllPpll'-ä-tiT? v.'„ S t t T 't í , y y T - Kc7 S„ap i ; o é ä I T I J ,


    OCR Scan     		052Typ. 1s5355 1N4148 SMD LL-34 1N914 CJ 4148 1N4148F ISS356 KT106 4152J ROHM 1SS292 SM 4151 ROHM RLS PDF