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    1N21 DIODE Search Results

    1N21 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1N21 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N21 diode

    Abstract: 1N23 diode 1N21 Diode Detector Mount 1N23 Diode Holder 1n21 1N21* Diode Detector Holder Microlab/FXR 1n21 1N23 HY-10N BNC T connectors INSERTION LOSS
    Text: MICROLAB/FXR Signal Samplers HX, HY, HZ series ♦ ♦ ♦ ♦ ♦ High Power, Reactive Probe 50 – 12,000 MHz 500 Watt Average Power Rating Minimal RF Insertion Loss High Reliability N, BNC, TNC, or SMA Standard Custom miniaturized versions to special order


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    PDF HX-10N HY-10N HZ-10N 1N21 diode 1N23 diode 1N21 Diode Detector Mount 1N23 Diode Holder 1n21 1N21* Diode Detector Holder Microlab/FXR 1n21 1N23 HY-10N BNC T connectors INSERTION LOSS

    1N21

    Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
    Text: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type


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    PDF 1N23W 1N415 DMA6498 1N3747W 1N3746 1N3745 DMA6497 DMA5223 DMA5278 DMA5253 1N21 1N1132 1N23 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1n26

    1N21 diode

    Abstract: 31N20 diode 1n222 1N222 1N212 1N218 2091-N 1N21
    Text: I n ter n a tio n a l 1N200 S e m ic o n d u c to r , I n c . 1N222 thru GENERAL PURPOSE DIODES SINGLE ENDED CAN ELECTRICAL CHARACTERISTICS at 25°C JEDEC Part Number M a x im u m Rever se W orking V olta g e B reakdow n Voltage F o rw a rd C u rr e n t 25°C


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    PDF 1N200 1N222 1N201 1N221 1N21 diode 31N20 diode 1n222 1N222 1N212 1N218 2091-N 1N21

    IN5351

    Abstract: 1N5389 1N4701A IN3998 IN3999 1N9408 1n2046-2 1n93B 1N2765 1N1736A
    Text: discrete devices iomitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon zener diodes N O T E S : T h e fo llo w in g n o te s e x p la in v a ria tio n s in th e s ta n d a rd ty p e n u m b e rs lis t e d fo r S ilic o n Z e n e r D io d e s . “ N o te ” n u m b e rs


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    IN3492

    Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
    Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90


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    PDF 3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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