NT56V1616A0T-7
Abstract: NT56V1616A0T-8
Text: NT56V1616A0T 16Mb: 1Mx16 Synchronous DRAM NT56V1616A0T DATA SHEET 1Mx16 Synchronous DRAM REV 1.2 August , 2000 REV 1.2 , AUG. 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. NT56V1616A0T
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NT56V1616A0T
1Mx16
Temperatu08
NT56V1616A0T-7
NT56V1616A0T-8
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Untitled
Abstract: No abstract text available
Text: HYM7V64100B R-Series Unbuffered 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100B is high speed 3.3Volt synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V64100B
1Mx64
1Mx16
1Mx16
50-pin
168-pin
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KM416C1200AJ-6
Abstract: No abstract text available
Text: 8MB 72 PIN FPM DRAM SIMM With 1Mx16 5VOLT TS2M3260R Description Features The TS2M3260R is a 2M by 32-bit dynamic RAM • 2,097,152-word by 32-bit organization. module with 4 pcs of 1Mx16 DRAMs assembled on the • Fast Page Mode operation. printed circuit board.
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1Mx16
TS2M3260R
TS2M3260R
32-bit
152-word
KM416C1200AJ-6
M5M418160BJ-6
KM416C1200AJ-6
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Untitled
Abstract: No abstract text available
Text: 4MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS1M3660G Description Features The TS1M3660G is a 1M by 36-bit dynamic RAM module • Fast Page Mode Operation. with 2 pcs of 1Mx16 and 4 pcs 1Mx1 DRAMs assembled • Single +5.0V ± 10% power supply. on the printed circuit board.
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1Mx16
TS1M3660G
TS1M3660G
36-bit
TS4M3260
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Untitled
Abstract: No abstract text available
Text: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to
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72PIN
1Mx16
TS2MEDM326R
TS2MEDM326R
32-bit
1Mx16-bit,
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Untitled
Abstract: No abstract text available
Text: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to
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72PIN
1Mx16
TS2MEDM326R
TS2MEDM326R
32-bit
1Mx16-bit,
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Untitled
Abstract: No abstract text available
Text: 4MB 72 PIN FPM TS1M3260R DRAM SIMM With 1Mx16 5VOLT Features Description The TS1M3260R is a 1M by 32-bit dynamic RAM module with 2 pcs of 1Mx16 DRAMs assembled on the printed circuit board. The TS1M3260R is optimized for application to systems which require high density and large capacity along with
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TS1M3260R
1Mx16
TS1M3260R
576-word
32-bit
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HYM7V64100
Abstract: No abstract text available
Text: HYM7V64100 Q-Series SO DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100 is high speed 3.3Volt synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin SOJ or TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V64100
1Mx64
1Mx16
50-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: HYM7V64200B R-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 1Mx16 bit Synchronous DRAMs in 50-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V64200B
2Mx64
1Mx16
1Mx16
50-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: HYM7V64100D Q-Series SO-DIMM 1Mx64 bit SDRAM Module based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100D is high speed 3.3Volt CMOS Synchronous DRAM module consisting of four 1Mx16 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V64100D
1Mx64
1Mx16
1Mx16
44-pin
168-pin
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PDF
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DRAM 1Mx1
Abstract: No abstract text available
Text: 8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT TS2M3660G Description Features The TS2M3660G is a 2M by 36-bit dynamic RAM module • Fast Page Mode Operation. with 4 pcs of 1Mx16 and 8 pcs 1Mx1 DRAMs assembled • Single +5.0V ± 10% power supply. on the printed circuit board.
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1Mx16
TS2M3660G
TS2M3660G
36-bit
TS4M3260
DRAM 1Mx1
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Untitled
Abstract: No abstract text available
Text: SMART SM5640230UUXUGU Modular Technologies March 31, 1997 16MByte 2M x 64 DRAM Module - 1Mx16 based 168-pin DIMM, Buffered Features Part Numbers • • • • • • • • • • • SM56402300UXUGU SM56402301UXUGU SM56402308UXUGU SM56402309UXUGU
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SM5640230UUXUGU
16MByte
1Mx16
168-pin
SM56402300UXUGU
SM56402301UXUGU
SM56402308UXUGU
SM56402309UXUGU
60/70/80ns
400mil
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Untitled
Abstract: No abstract text available
Text: SMART SM5320230UUXSUU Modular Technologies September 9, 1996 8MByte 2M x 32 DRAM Module - 1Mx16 based 72-pin SODIMM Features Part Numbers • • • • • • • • • • • SM53202300UXSUU SM53202301UXSUU SM53202308UXSUU SM53202309UXSUU Standard
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SM5320230UUXSUU
1Mx16
72-pin
SM53202300UXSUU
SM53202301UXSUU
SM53202308UXSUU
SM53202309UXSUU
60/70/80ns
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Untitled
Abstract: No abstract text available
Text: Industrial Temperature 16Mbit Enhanced Synchronous DRAM 1Mx16 ESDRAM Preliminary Data Sheet Features Description • • As a JEDEC superset standard, the Enhanced Synchronous DRAM ESDRAM is an evolutionary modification to the JEDEC standard SDRAM. The industrial temperature grade
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16Mbit
1Mx16
SM2404T-7
50-pin
SM2404T-10I
545-DRAM;
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382830-1
Abstract: No abstract text available
Text: SMART SM5640130UUXUGU Modular Technologies March 31, 1997 8MByte 1M x 64 DRAM Module - 1Mx16 based 168-pin DIMM, Buffered Features Part Numbers • • • • • • • • • • • SM56401300UXUGU SM56401301UXUGU SM56401308UXUGU SM56401309UXUGU
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SM5640130UUXUGU
1Mx16
168-pin
SM56401300UXUGU
SM56401301UXUGU
SM56401308UXUGU
SM56401309UXUGU
60/70/80ns
400mil
AMP-382830-1
382830-1
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Untitled
Abstract: No abstract text available
Text: SMART SM5360230U1P6UU Modular Technologies Preliminary 8MByte 2M x 36 DRAM Module - 1Mx16 & 4Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • SM536023011P6UU SM536023091P6UU Configuration : Parity Access Time : 60/70/80ns
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SM5360230U1P6UU
1Mx16
72-pin
SM536023011P6UU
SM536023091P6UU
60/70/80ns
400mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
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BVTE16
Abstract: No abstract text available
Text: »M YU H D W I • HYM7V64100C Q-SERIES > SO-DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100C is high speed 3.3Volt CM OS Synchronous DRAM module consisting of four 1Mx16 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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OCR Scan
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HYM7V64100C
1Mx64
1Mx16
44-pin
168-pin
33fiF
HYM7V641OOC
HYM7V64100CLTQG-10
BVTE16
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Untitled
Abstract: No abstract text available
Text: * « Y U II P A I — • HYM 7 V64 2 0 0 B R -S E R IE S > Unbuffered 2Mx64 U t SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 1Mx16 bit Synchronous DRAMs in 50-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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OCR Scan
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2Mx64
1Mx16
HYM7V64200B
50-pin
168-pin
0022nF
04/MAR
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PDF
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Untitled
Abstract: No abstract text available
Text: » « r U N D W I « > H Y M 7 V 6 4 1 0 0 B R - S E R IE S Unbuffered 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100B is high speed 3.3Vo!t synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin giass-epoxy
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OCR Scan
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1Mx64
1Mx16
HYM7V64100B
50-pin
168-pin
0022fiF
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PDF
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Untitled
Abstract: No abstract text available
Text: C ««vuHnai — • H YM 7 V6 4100 B Q -S E R IE S SO DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100B is high speed 3.3Volt synchronous dynamic RAM module consisting of four 1Mx16 bit Synchronous DRAMs in 50-pin SOJ or TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. Two 0.22|j.F and two 0.0022|iF decoupling capacitors are mounted for each SDRAM.
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OCR Scan
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1Mx64
1Mx16
HYM7V64100B
50-pin
168-pin
1Mn16
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8Mx64
Abstract: HYM7V72A1601TFG 4MX72 4MX16 1MX16 HYM7V64400 HYM7V64401
Text: •«ruMP/ti TABLE OF CONTENTS} 1. INDEX Table of Contents 2. PRODUCT QUICK GUIDE Ordering Information Quick Reference 3. SYNCHRONOUS DRAM MODULE DATA SHEETS 16M Synchronous DRAM Modules Page - Unbuffered DIMM HYM7V641OOBTRG- 1Mx64, 1Mx16 based
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1Mx64,
1Mx16
2Mx64
2Mx64,
2Mx72,
4Mx64,
------------------------------------4Mx72
801ATHG----------------------------------
8Mx64
HYM7V72A1601TFG
4MX72
4MX16
HYM7V64400
HYM7V64401
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM • Part Identification high density memory module. The Samsung KMM366F224CJ1
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KMM366F224CJ1
1Mx16,
2Mx64bits
1Mx16bits
400mil
168-pin
KMM366F224CJ1
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PDF
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KMM364C124AJ
Abstract: No abstract text available
Text: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124AJ consists of four CMOS
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OCR Scan
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KMM364C124AJ
1Mx64
1Mx16,
1Mx16bit
42-pin
400mil
48pin
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124AJ consists of four CMOS
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OCR Scan
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KMM364C124AJ
1Mx64
1Mx16,
KMM364C124AJ
44-pin
400mil
48pin
168-pin
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PDF
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