AN1064
Abstract: CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C
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CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167roducts
AN1064
CY62167EV30LL
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CY7C681
Abstract: CY62167EV30LL-45ZXIT US1260 CY7C68A
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C
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CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167EV30LL.
10-Jun-2011
CY7C681
CY62167EV30LL-45ZXIT
US1260
CY7C68A
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AN1064
Abstract: CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-Ball
48-Pin
AN1064
CY62167EV30LL
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CY62167EV30LL-45ZXI
Abstract: AN1064 CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-ball
48-pin
CY62167EV30LL-45ZXI
AN1064
CY62167EV30LL
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
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PDF
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CY62167EV30
16-Mbit
48-Ball
48-Pin
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-ball
48-pin
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CY62167EV30LL-45ZXI
Abstract: AN1064 CY62167EV30
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V
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CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167EV30LL-45ZXI
AN1064
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AN1064
Abstract: CY62167EV30
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V
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CY62167EV30
16-Mbit
48-Ball
48-Pin
AN1064
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CY62167EV30LL-45ZXI
Abstract: cy62167ev30LL 48 ball VFBGA AN1064 CY62167EV30 2026-00
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V
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CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167EV30LL-45ZXI
cy62167ev30LL
48 ball VFBGA
AN1064
2026-00
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 168) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C
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CY62167EV30
16-Mbit
48-Ball
48-Pin
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72-PIN
Abstract: DS2227 DS2227-100 DS2227-120 DS2227-70 DS9072-72V D31-D36
Text: DS2227 Flexible NV SRAM Stik www.dalsemi.com FEATURES PIN ASSIGNMENT 1 1M SRAM 1M SRAM 1M SRAM Flexibly organized as 128k x 32, 256k x 16, or 512k x 8 bits Data retention >10 years in the absence of VCC Nonvolatile circuitry transparent to and independent from host system
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DS2227
72-position
72-Pin
DS2227
72-PIN
DS2227-100
DS2227-120
DS2227-70
DS9072-72V
D31-D36
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Untitled
Abstract: No abstract text available
Text: DS2227 Flexible NV SRAM Stik www.dalsemi.com PIN ASSIGNMENT FEATURES 1 1M SRAM 1M SRAM 1M SRAM Flexibly organized as 128k x 32, 256k x 16, or 512k x 8 bits Data retention >10 years in the absence of VCC Nonvolatile circuitry transparent to and independent from host system
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DS2227
72-position
72-Pin
DS2227
72-PIN
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CY62167DV30
Abstract: CY62167DV30LL
Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features • Thin small outline package (TSOP I) Configurable as 1M x 16 or as 2M x 8 SRAM ■ Wide voltage range: 2.2 V – 3.6 V ■ Ultra-low active power: Typical active current: 2 mA at f = 1 MHz ■ Ultra-low standby power
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CY62167DV30
16-Mbit
CY62167DV30LL
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Untitled
Abstract: No abstract text available
Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or
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CY62167EV18
48-ball
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xc5vlx110t models
Abstract: XC5VLX155T
Text: VPX Boards VPX-VLX VPX Board with User-Configurable Virtex-5 FPGA 64 I/O or 32 LVDS Front Panel Mezzanine Bus AXM I/O Module DDR2 SDRAM 32M x 16 DDR2 SDRAM 32M x 16 Dual-Port SRAM 1M x 32 XC5VLX85T XC5VLX110T XC5VLX155T Dual Port SRAM 1M x 32 97 I/O PCIe Bus
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XC5VLX85T
XC5VLX110T
XC5VLX155T
XC5VLX30T
VPX-VLX85:
VPX-VLX110:
VPX-VLX155:
AXM-D03
RS485
AXM-D04
xc5vlx110t models
XC5VLX155T
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AN1064
Abstract: CY62167EV18 CY62167EV18LL CY62167EV30LL
Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0
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CY62167EV18
I/O15)
AN1064
CY62167EV18LL
CY62167EV30LL
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Untitled
Abstract: No abstract text available
Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0
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CY62167EV18
I/O15)
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Untitled
Abstract: No abstract text available
Text: A67P1618/A67P0636 Series 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM Document Title 2M X 16, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue March 25, 2004 Preliminary March, 2004, Version 0.0
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A67P1618/A67P0636
250/227/200/166/150/133MHz)
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bga 6x8
Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 30, 2001 Preliminary November, 2001, Version 0.0 AMIC Technology, Inc.
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A64S0616
A64S0616
bga 6x8
A64S0616G-70
A64S0616G-85
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AWB065
Abstract: seiko epson RAM IC MEMORY CARD "40 pin" 32k sram card 20 pin battery
Text: JEIDA Ver. 4 STATIC RAM VARIATION Part Number Memory Size AWB065SD*0 AWB129SD*0 AWB257SD*0 AWB513SD*0 AWB101SD*0 AWB201SD*0 64K Bytes 128K Bytes 256K Bytes 512K Bytes 1M Bytes 2M Bytes Description 32K X 16 64K X 16 128K X 16 256K X 16 512K X 16 1M X 16 bits
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AWB065SD
AWB129SD
AWB257SD
AWB513SD
AWB101SD
AWB201SD
AWB065,
AWB129,
AWB257,
AWB513,
AWB065
seiko epson RAM IC MEMORY CARD "40 pin"
32k sram card 20 pin battery
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BR2325
Abstract: No abstract text available
Text: 1. VARIATION Part Number LWB065ES* LWB129ES* LWB257ES* LWB513ES* LWB101 E S * LWB201 E S * Memory Size 6 4K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128KX 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit
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LWB065ES*
LWB129ES*
LWB257ES*
LWB513ES*
LWB101
LWB201
128KX
BR2325
200nS
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PCMCIA CARD, Static Memory, write protect switch
Abstract: PCMCIA CARD, Static Memory, write protect switch, PCMCIA SRAM Memory Card 512k 128k sram card 60 pin battery
Text: PCMCIA/JEIDA LOW VOLTAGE STATIC RAM 1. VARIATION Memory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE Description 32K x 64K x 128K x 256K x 512K x 1M x 16 16 16 16 16 16 bit bit bit bit bit bit MIX MIX MIX MIX MIX MIX CMOS CMOS CMOS CMOS CMOS
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PDF
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BR2325
200nS
PCMCIA CARD, Static Memory, write protect switch
PCMCIA CARD, Static Memory, write protect switch,
PCMCIA SRAM Memory Card 512k
128k sram card 60 pin battery
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Untitled
Abstract: No abstract text available
Text: M em ory Size 64K 128K 256K 512K 1M 2M BYTE BYTE BYTE BYTE BYTE BYTE D escription 32K 64K 128K 256K 512K 1M X X X X X X 16 16 16 16 16 16 bit bit bit bit bit bit MIX M IX MIX MIX MIX MIX CMOS CMOS CMOS CMOS CMOS CMOS W ID E W ID E W ID E W ID E W IDE W ID E
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200nS
BR2325
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sram card battery
Abstract: No abstract text available
Text: 1M Byte SRAM CARD KMCJ616512 512K x 16 / 1M x 8_ GENERAL DESCRIPTION July 1993 FEATURES The KM CJ616512 is the industry standard SRAM m em ory card and consists ot Samsung's advanced 32 TSOP 1M bits SRAM devices. • Fast Access Time : 150/200/250ns
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KMCJ616512
CJ616512
150/200/250ns
0032H
0034H
0036H
003AH
003CH
003EH
0040H
sram card battery
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