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    Ohmite Mfg Co 41F400E

    RES 400 OHM 1% 1W AXIAL
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    Schneider Electric LC1F400X7

    CONTACTOR CONTACTOR
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    Vishay Sprague 53D221F400KT6

    CAP ALUM 220UF 400V AXIAL TH
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    Vishay Sprague 53D101F400JL6

    CAP ALUM 100UF 400V AXIAL TH
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    Vishay Sprague 53D381F400MD6

    CAP ALUM 380UF 400V AXIAL TH
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    1F400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


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    PDF

    UM0560

    Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
    Text: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard


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    PDF UM0560 UM0560 STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S

    SM59128

    Abstract: SM59128C40 SPWM IC spwm sm591 BRM20 SPWM circuit diagram
    Text: SyncMOS Technologies International, Inc. SM59128 8-Bits Micro-controller Embedded 128KB flash & 1KB RAM & IIC & SPWM Product List Features SM59128C25, 25MHz 128KB internal flash MCU SM59128C40, 40MHz 128KB internal flash MCU z z z z Description z The SM59128 series product is an 8-bit single chip


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    PDF SM59128 128KB SM59128C25, 25MHz SM59128C40, 40MHz SM59128 SM59128C40 SPWM IC spwm sm591 BRM20 SPWM circuit diagram

    ba37

    Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
    Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary


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    PDF K8D1716UTC K8D1716UBC 48TSOP1 48FBGA 047MAX 48-Ball ba37 K8D1716U K8D1716UBC samsung nor flash BA251

    AT26DF161A-SSU

    Abstract: AT26DF161A AT26DF161A-MU AT26DF161A-SU
    Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks


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    PDF 32-Kbyte 64-Kbyte AT26DF161A-SSU AT26DF161A AT26DF161A-MU AT26DF161A-SU

    BGA-56P-M01

    Abstract: DS05-50216-1E
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V


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    PDF DS05-50216-1E MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 56-ball 56-pin BGA-56P-M01 DS05-50216-1E

    DN25D

    Abstract: pt100 sensors SENSYM AD7707 AD7707BR AD7707BRU AD780 EVAL-AD7707EB RU-20
    Text: a 3 V/5 V, ؎10 V Input Range, 1 mW 3-Channel 16-Bit, Sigma-Delta ADC AD7707 FEATURES Charge Balancing ADC 16 Bits No Missing Codes 0.003% Nonlinearity High Level ؎10 V and Low Level (؎10 mV) Input Channels True Bipolar ؎100 mV Capability on Low Level Input


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    PDF 16-Bit, AD7707 20-Lead AD7707 RU-20) DN25D pt100 sensors SENSYM AD7707BR AD7707BRU AD780 EVAL-AD7707EB RU-20

    pl2303

    Abstract: AN1310 PL2303 Prolific AN1310ui PIC18 bootloader AN1310 pic GPR circuit schematic diagram full free pic microcontroller details 16/pl2303 0408H pl2303 0408H
    Text: AN1310 High-Speed Serial Bootloader for PIC16 and PIC18 Devices Author: E. Schlunder Microchip Technology Inc. INTRODUCTION Microchip’s enhanced Flash microcontrollers enable firmware to program itself. This is done by a “bootloader” providing a firmware kernel, residing in the


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    PDF AN1310 PIC16 PIC18 AN1310 Featu18 DS01310A-page pl2303 PL2303 Prolific AN1310ui PIC18 bootloader AN1310 pic GPR circuit schematic diagram full free pic microcontroller details 16/pl2303 0408H pl2303 0408H

    DL161

    Abstract: DL162 DL163
    Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while


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    PDF Am29DL16xD 16-Bit) Am29DL164D Am29DL162D DL161 DL162 DL163

    M410000002

    Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
    Text: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am41DL16x4D M410000002 DL161 DL162 DL163 m410000009 AM29DL164DT

    DL161

    Abstract: DL162 DL163 AM29DL164DT M4200
    Text: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am42DL16x2D FLA069--69-Ball DL161 DL162 DL163 AM29DL164DT M4200

    DS42546

    Abstract: No abstract text available
    Text: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS


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    PDF DS42546 Am29DL163D 16-Bit) 69-Ball DS42546

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400

    siemens vdo

    Abstract: MB91F362GA MB91F369GAPQS1 BYX 13 400 R CRYSTAL CMAC FR51 TDT55 tdt7 lcd timer
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-16401-3E 32-bit RISC Microcontroller CMOS FR50 Family MB91360G Series MB91FV360GA/F362GA/F369GA • DESCRIPTION The Fujitsu MB91360G series is a standard microcontroller containing a wide range of I/O peripherals and bus


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    PDF DS07-16401-3E 32-bit MB91360G MB91FV360GA/F362GA/F369GA MB91360G F0201 siemens vdo MB91F362GA MB91F369GAPQS1 BYX 13 400 R CRYSTAL CMAC FR51 TDT55 tdt7 lcd timer

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash


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    PDF LE28DW8163T-80T xxxx-19/20 xxxx-20/20

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    SA30* diode

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes


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    PDF DS05-20880-4E MBM29DL16XTE/BE70/90 MBM29DL16XTE/BE MBM29DL16XTE/BE70 MBM29DL16XTE/BE90 F0311 SA30* diode FPT-48P-M19 FPT-48P-M20

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    BUS ARCHITECTURE OF MICROPROCESSOR 68000

    Abstract: a8000 ATMEL 322 MICROPROCESSOR 68000 AT49F1604 AT49F1604T AT49F1614 AT49F1614T
    Text: Features • 4.5V to 5.5V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • – Thirty 32K Word 64K byte Sectors with Individual Write Lockout – Eight 4K Word (8K byte) Sectors with Individual Write Lockout


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    PDF 0977I 11/99/xM BUS ARCHITECTURE OF MICROPROCESSOR 68000 a8000 ATMEL 322 MICROPROCESSOR 68000 AT49F1604 AT49F1604T AT49F1614 AT49F1614T

    AD7705

    Abstract: No abstract text available
    Text: a AD7705/AD7706/AD7707 Instrumentation Converter FAQs: Serial Interface How does the serial interface operate? The serial interface on this family of converters is implemented as a state machine. The interface works by counting clocks on each data transfer. Therefore, if you are performing a write operation to one of the ADC’s 8-bit registers, 8 SCLK cycles


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    PDF AD7705/AD7706/AD7707 AD7705

    Untitled

    Abstract: No abstract text available
    Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES


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    PDF Am29DL162C/Am29DL163C 16-Bit) 29DL162C/Am 29DL163C

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    PDF 32KWord Reading/P18 48-ball, AT49BV1604

    Untitled

    Abstract: No abstract text available
    Text: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture - Thirty 32K Word 64K byte Sectors with Individual Write Lockout - Eight 4K Word (8K byte) Sectors with Individual Write Lockout - Two 16K Word (32K byte) Sectors with Individual Write Lockout


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    PDF 48-Ball,

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES Charge Balancing ADC 24 Bits No Missing Codes 0.0015% Nonlinearity Five-Channel Programmable Gain Front End Gains from 1 to 128 Can Be Configured as Three Fully Differential Inputs or Five Pseudo-Differential Inputs Three-W ire Serial Interface


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    PDF AD7714-3) AD7714-5) AD7714Y AD7714 24-Lead 28-Lead RS-28) MIL-M-38510