Untitled
Abstract: No abstract text available
Text: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3974-01L
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Untitled
Abstract: No abstract text available
Text: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3974-01L
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET RDD020N60 Structure Silicon N-channel MOSFET Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
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RDD020N60
SC-63)
OT-428>
R1120A
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Untitled
Abstract: No abstract text available
Text: SID10N30-600I 7.5A, 300V, RDS ON 600 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-251P DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and
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SID10N30-600I
O-251P
06-Apr-2012
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM32434LA-S •General description ■Features ELM32434LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=2A • Rds(on) < 4.4Ω (Vgs=10V) ■Maximum absolute ratings
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ELM32434LA-S
ELM32434LA-S
P0001
Mar-23-2009
O-252
P0260AD
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM32434LA-S •General description ■Features ELM32434LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=2A • Rds(on) < 4.4Ω (Vgs=10V) ■Maximum absolute ratings
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ELM32434LA-S
ELM32434LA-S
Mar-23-2009
P0260AD
O-252
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Untitled
Abstract: No abstract text available
Text: SDU/D02N60A Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES Low Crss typical 3pF . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 600V 2A 4.4 @ VGS=10V,ID=1A G Fast Switching. 100% Avalanche Rated. G D S STU SERIES
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SDU/D02N60A
O-252
O-252
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P0260AD
Abstract: No abstract text available
Text: シングル N チャンネル MOSFET ELM32434LA-S •概要 ■特長 ELM32434LA-S は低入力容量 低電圧駆動、 低 ・ Vds=600V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=2A ・ Rds on < 4.4Ω (Vgs=10V) ■絶対最大定格値
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ELM32434LA-S
Mar-23-2009
P0260AD
O-252
P0260AD
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RT9593
Abstract: 100uF 300V capacitor GSD2004S photoflash charger 513 RT95
Text: RT9593 MOSFET Integrated Smart Photoflash Capacitor Charger with IGBT Driver General Description Features The RT9593 is a complete photoflash module solution in digital and film cameras. It is targeted for applications that use either two AA batteries or single lithium-ion battery.
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RT9593
RT9593
VQFN-16L
DS9593-03
100uF 300V capacitor
GSD2004S
photoflash charger 513
RT95
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K3050
Abstract: 2sk3050
Text: 2SK3050 Transistors 10V Drive Nch MOS FET 2SK3050 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)
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2SK3050
K3050
K3050
2sk3050
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ELM32434LA
Abstract: No abstract text available
Text: 单 N 沟道 MOSFET ELM32434LA-S •概要 ■特点 ELM32434LA-S 是 N 沟道低输入电容，低工作电压， •Vds=600V 低导通电阻的大电流 MOSFET。 ·Id=2A ·Rds on < 4.4Ω (Vgs=10V) ■绝对最大额定值 项目 如没有特别注明时, Ta=25℃
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ELM32434LA-S
Mar-23-2009
P0260AD
O-252
FieldELM32434LA-S
ELM32434LA
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Untitled
Abstract: No abstract text available
Text: SDU/D01N60A Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS 600V Low Crss typical 2pF . R DS(ON) (m Ω) Max ID 1.1A Fast Switching. 100% Avalanche Rated. 9.3 @ VGS=10V,ID=0.55A G G D
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SDU/D01N60A
O-252
O-252
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Untitled
Abstract: No abstract text available
Text: Models with Standards Certification Nov. 2012 Consult your OMRON sales representative for specific models with standard approvals. CONNECTOR ●PCB CONNECTOR Model Standards Number of poles Standard No. Rating XG4AXG4C UL Approved Models Recognized 10 14、16、20 、26 、30 、34 、40 、50 、60 、64 E103202（UL1977）
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E103202ï
UL1977ï
E87929
LR31928
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a1870
Abstract: a1870 fet marking a1870 FW513 TC-00002515
Text: FW513 Ordering number : ENA1870 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET FRD : Ultrahigh-Speed Switching Diode FW513 General-Purpose Switching Device Applications Features • • • FET RDS on =5.8Ω (typ.), 10V drive FRD VF=1.1V (typ.), trr=40ns (typ.)
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ENA1870
FW513
PW10s,
1000mm2
A1870-5/5
a1870
a1870 fet
marking a1870
FW513
TC-00002515
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF2N30
UF2N30
UF2N30L-AA3-R
UF2N30G-AA3-R
OT-223
QW-R502-761
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1N65
Abstract: RD300
Text: Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 1/8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN1N65I3 BVDSS : 700V @Tj=150℃ RDS ON : 9.5Ω ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
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C437I3
MTN1N65I3
MTN1N65I3
O-251
MTN1N65re
UL94V-0
1N65
RD300
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Untitled
Abstract: No abstract text available
Text: SVD1N70M/SVD1N70T 1A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD1N70M/SVD1N70T
O-251-3L
O-220-3L
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Untitled
Abstract: No abstract text available
Text: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD1N60M/SVD1N60T
O-251-3L
30TYP
O-220-3L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-053
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diode TA 20-08
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
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KHB1D0N60G
diode TA 20-08
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Untitled
Abstract: No abstract text available
Text: RDD022N60 Nch 600V 2A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 6.7W ID 2A PD 20W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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RDD022N60
SC-63)
OT-428)
022N60
R1102A
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U1N60
Abstract: as58
Text: PJU1N60 T O- 25 1 600V N-Channel Enhancement Mode MOSFET FEATURES TO -2 5 1 • 1A, 600V, RDS ON =11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS
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PJU1N60
2002/95/EC
O-220AB
O-251
MIL-STD-750
U1N60
O-251
80PCS/TUBE
2010-REV
U1N60
as58
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MOSFET 600V 1A
Abstract: BALLAST CFL
Text: MPK02N6 N-Channel POWER MOSFET Features 600V, 1A, Typical Rds on = 7Ω Extremely High dv/dt Capability 100% Avalanche Tested New High Voltage Benchmark Gate Charge Minimized Application Low Power Battery Chargers Swith Mode Low Power Supplies Low Power, Ballast, CFL(Compact
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MPK02N6
00A/us
MOSFET 600V 1A
BALLAST CFL
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SSR -100 DD
Abstract: MOSFET IRF VDs 600v SSR -25 DD POWER MOSFET Rise Time irf power mosfet
Text: SSR/U1N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ ^DS on = Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V
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SSR/U1N60A
SSR -100 DD
MOSFET IRF VDs 600v
SSR -25 DD
POWER MOSFET Rise Time
irf power mosfet
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