Untitled
Abstract: No abstract text available
Text: Product specification 1SV288 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 16 Typ. Low Series Resistance:rs = 0.92 +0.1 2.6-0.1 1.0max (Typ.) 0.475 Excellent C-V Characteristics,and Small Tracking Error.
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1SV288
OD-323
C2V/C25V
olta25
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1SV288
Abstract: No abstract text available
Text: 1SV288 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV288 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV288
1SV288
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1SV288
Abstract: No abstract text available
Text: 1SV288 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV288 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. · Low series resistance: rs = 0.92 Ω (typ.) · Excellent C-V characteristics, and small tracking error.
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1SV288
1SV288
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Untitled
Abstract: No abstract text available
Text: 1SV288 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV288 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV288
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1SV288
Abstract: No abstract text available
Text: 1SV288 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV288 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV288
1SV288
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Untitled
Abstract: No abstract text available
Text: 1SV288 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV288 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. · Low series resistance: rs = 0.92 Ω (typ.) · Excellent C-V characteristics, and small tracking error.
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1SV288 spice
Abstract: 1SV288
Text: 20010110 1SV288 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR= 2V ～ 25V Ta = 27℃
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1SV288
480E-15
00E-04
000E-10
00E-09
1SV288 spice
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marking tj
Abstract: 1SV288 marking hz sod323
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV288 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 16 Typ. Low Series Resistance:rs = 0.92 +0.1 2.6-0.1 1.0max (Typ.) 0.475 Excellent C-V Characteristics,and Small Tracking Error.
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1SV288
OD-323
C2V/C25V
marking tj
1SV288
marking hz sod323
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1SV288
Abstract: C25V
Text: 1SV288 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV288 ○ CATV チューナ電子同調用 単位: mm • 容量変化比が大きく､ワイドバンド用に最適です。 • 直列抵抗が小さい。 • 2 端子小型外囲器なので､チューナの小型化に適しています。
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1SV288
C2V/C25V
1SV288
C25V
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SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード
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SCJ0004N
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
SCJ0004N
JDV2S71E
DF2S6.8UFS
015AZ3.3
1ss421
CMG07
CMZ24
CRS06
DF2S5.6SC
DF3S6.8ECT
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MRF581
Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Text: RFݠ8⠜ RF RFׂڦᆌᆩࢅยऺ֩ 20066ሆ ݀քනǖ20066ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ&ጺঢ়RFׂ ० ᅃӲԨ்ࣷۼၠጲम༵ᅜ߀்ڦRF֩ăڼ8Ӳᄺփ૩ྔă்ᅙཁेକ߸ܠएᇀ
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Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
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Variable Capacitance Diodes
Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG02
CRG01
CRG04
CMG06
Variable Capacitance Diodes
1SV283B
2fu smd transistor
bidirectional zener diode
015DZ4
015AZ15
CRS06
smd diode Lz zener
general purpose zener diode 256
CMZ24
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Toshiba TMPA8873
Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6
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SCE0001C
S-167
SCE0001D
Toshiba TMPA8873
TA1343NG
TMPA8891
TMPA8893
tmpa8873
tmpa8859
TC90A96BFG
TB1318FG
TMPA8857
TMPA8853
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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uaf4000
Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに
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20GHz
uaf4000
toshiba smd marking code transistor
smd code marking wl sot23
RF LNB C band chipset
M74 marking
BFG480W
SMD transistor n36
vHF amplifier module 2450Mhz
TOSHIBA DIODE CATALOG
DIODE RF DETECTOR
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SV288 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 288 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2 v / C 2 5 V = 16 TYP. Low Series Resistance : rs = 0.92H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SV288 1 SV2 8 8 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2 y /C 2 5 Y = 16 TYP. • Low Series Resistance : rs = 0.920 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV288
Abstract: C25V
Text: 1SV288 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 288 Unit in mm CATV TUNING + 0.2 1.25-0.1 2-5 ±0.2 1-rl + 0.2 1 .7 -0 .1 • High Capacitance Ratio : C2V/C25V = 16 TYP. • Low Series Resistance : rs = 0.920 (TYP.)
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C2V/C25V
1SV288
C25V
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toshiba SO 41
Abstract: 1SV288 C25V toshiba marking format
Text: TO SH IBA 1SV288 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 288 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 16 TYP. • Low Series Resistance : rs = 0.920 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV288
C2V/C25V
toshiba SO 41
1SV288
C25V
toshiba marking format
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Untitled
Abstract: No abstract text available
Text: 1SV288 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 288 Unit in mm CATV TUNING + 0.2 1.25-0.1 2-5 ±0.2 1-rl + 0.2 1 .7 -0 .1 • High Capacitance Ratio : C2V/C25V = 16 TYP. • Low Series Resistance : rs = 0.920 (TYP.)
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C2V/C25V
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1SV288
Abstract: C25V
Text: TOSHIBA 1SV288 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 8 CATV TUNING Unit in mm • High Capacitance Ratio : C2V /C25V = 16 TYP. • Low Series Resistance + 0.2 1.25-0.1 : rs = 0 .9 2 0 (TYP.) •JJ Excellent C-V Characteristics, and Small Tracking Error.
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1SV288
C2y/C25V
004gigns,
1SV288
C25V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV288 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 <;\/3 « « Unit in mm CATV TUNING • High Capacitance Ratio : C 2y/ ^25V —16 TYP. • Low Series Resistance : r$ = 0.92il (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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