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Microchip Technology Inc 1N5556 TVS DIODE 40.3VWM 63.5VC DO13
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DigiKey	1N5556	Bulk			1	1 $22.58 10 $22.58 100 $20.97 1000 $20.97 10000 $20.97	Buy Now
Avnet Americas	1N5556	Bulk		21 Weeks	100	1 $22.58 10 $22.58 100 $20.97 1000 $20.16 10000 $20.16	Buy Now
Mouser Electronics	1N5556		420			1 $22.58 10 $22.58 100 $22.58 1000 $22.58 10000 $22.58	Buy Now
Newark	1N5556	Bulk			100	1 - 10 - 100 $20.97 1000 $20.16 10000 $20.16	Buy Now
Microchip Technology Inc	1N5556			21 Weeks		1 $22.58 10 $22.58 100 $22.58 1000 $22.58 10000 $22.58	Buy Now

Onlinecomponents.com	1N5556					1 $23.72 10 $21.8 100 $19.91 1000 $19.32 10000 $19.32	Buy Now
NAC	1N5556				15	1 $23.04 10 $23.04 100 $21.22 1000 $19.67 10000 $19.67	Buy Now
Master Electronics	1N5556					1 $23.72 10 $21.8 100 $19.91 1000 $19.32 10000 $19.32	Buy Now
Microchip Technology Inc JAN1N5556 TVS DIODE 40.3VWM 63.5VC DO13
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DigiKey	JAN1N5556	Bulk			100	1 - 10 - 100 $40.56 1000 $40.56 10000 $40.56	Buy Now
Avnet Americas	JAN1N5556	Bulk		21 Weeks	100	1 - 10 - 100 $42.8064 1000 $37.34595 10000 $37.34595	Buy Now
Mouser Electronics	JAN1N5556					1 - 10 - 100 $40.56 1000 $40.56 10000 $40.56	Get Quote
Newark	JAN1N5556	Bulk			100	1 - 10 - 100 $40.56 1000 $39 10000 $39	Buy Now
Microchip Technology Inc	JAN1N5556		716	21 Weeks		1 $43.68 10 $43.68 100 $43.68 1000 $43.68 10000 $43.68	Buy Now

NAC	JAN1N5556				8	1 $44.57 10 $44.57 100 $41.05 1000 $38.05 10000 $38.05	Buy Now
Avnet Silica	JAN1N5556			23 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	JAN1N5556			22 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	JAN1N5556					1 - 10 - 100 $38.73 1000 $38.73 10000 $38.73	Buy Now
Microchip Technology Inc 1N5556-TR TVS DIODE 40.3VWM 63.5VC DO13
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DigiKey	1N5556-TR	Reel			100	1 - 10 - 100 $20.93 1000 $20.93 10000 $20.93	Buy Now
Microchip Technology Inc JANTX1N5556 TVS DIODE 40.3VWM 63.5VC DO13
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DigiKey	JANTX1N5556	Bulk			100	1 - 10 - 100 $54.6 1000 $54.6 10000 $54.6	Buy Now
Mouser Electronics	JANTX1N5556		137			1 $58.8 10 $58.8 100 $58.8 1000 $58.8 10000 $58.8	Buy Now
Newark	JANTX1N5556	Bulk			100	1 - 10 - 100 $54.6 1000 $52.5 10000 $52.5	Buy Now
Microchip Technology Inc	JANTX1N5556			21 Weeks		1 $58.8 10 $58.8 100 $58.8 1000 $58.8 10000 $58.8	Buy Now
NAC	JANTX1N5556				5	1 $60 10 $60 100 $55.26 1000 $51.22 10000 $51.22	Buy Now

Avnet Silica	JANTX1N5556			23 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	JANTX1N5556			22 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	JANTX1N5556					1 $61.76 10 $55.26 100 $51.07 1000 $51.07 10000 $51.07	Buy Now
Microchip Technology Inc JANTXV1N5556 TVS DIODE 40.3VWM 63.5VC DO13
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	JANTXV1N5556	Bulk			500	1 - 10 - 100 - 1000 $250 10000 $250	Buy Now
Mouser Electronics	JANTXV1N5556					1 $72.81 10 $72.8 100 $71.18 1000 $71.18 10000 $71.18	Get Quote
Newark	JANTXV1N5556	Bulk			100	1 - 10 - 100 $67.6 1000 $65 10000 $65	Buy Now
Microchip Technology Inc	JANTXV1N5556			21 Weeks		1 $72.8 10 $72.8 100 $72.8 1000 $72.8 10000 $72.8	Buy Now
NAC	JANTXV1N5556				4	1 $74.29 10 $74.29 100 $68.42 1000 $63.41 10000 $63.41	Buy Now

Master Electronics	JANTXV1N5556					1 - 10 - 100 $66.59 1000 $66.59 10000 $66.59	Buy Now

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1N5556 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
1N5556	Microsemi	TVS - Diodes, Circuit Protection, TVS DIODE 40.3VWM 63.5VC DO13	Original	PDF
1N5556	Microsemi	Transient Absorption Zener	Scan	PDF
1N5556	Microsemi	Data Book 1983	Scan	PDF
1N5556	Microsemi	Transient Absorption Zener	Scan	PDF
1N5556	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N5556	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
1N5556	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
1N5556	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N5556	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N5556	New England Semiconductor	1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES	Scan	PDF
1N5556	Semitron	Data Book 1991	Scan	PDF
1N5556/TR	Microchip Technology	TVS DIODE 40.3VWM 63.5VC DO13	Original	PDF
1N5556TR	Microsemi	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR	Original	PDF

1N5556 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 1N5556 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| Home 1N5556 Availability Online Store	Original	PDF	1N5556 1N5556 STV3208 LM3909N
Untitled Abstract: No abstract text available Text: 1N5556+JAN Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage44 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current24.0	Original	PDF	1N5556 Voltage44 Voltage40 Current24 Voltage63 StyleDO-13
Untitled Abstract: No abstract text available Text: 1N5556+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage44 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current24.0	Original	PDF	1N5556 Voltage44 Voltage40 Current24 Voltage63 StyleDO-13
DO-202AA Abstract: 1N5555 JANTXV 1N5555 Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036 Text: 1N5555 1N5557 1N5556 1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N5555 thru 1N5558 are JEDEC registered selections for unidirectional devices. All have the	Original	PDF	1N5555 1N5557 1N5556 1N5558 1N5555 IEC61000-4-5. DO-202AA 1N5555 JANTXV Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036
1N6762 Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index	Original	PDF	MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
1N5907 JANTX Abstract: 1N5662A JANTXV 1n5638a 1N5555 1N5558 1N5629A 1N5665A 1N5907 1N5660A 1N5665A JAN Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 2009. INCH-POUND MIL-PRF-19500/500E 24 March 2009 SUPERSEDING MIL-PRF-19500/500D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,	Original	PDF	MIL-PRF-19500/500E MIL-PRF-19500/500D 1N5555 1N5558, 1N5907, 1N5629A 1N5665A, MIL-PRF-19500. 1N5907 JANTX 1N5662A JANTXV 1n5638a 1N5558 1N5665A 1N5907 1N5660A 1N5665A JAN
DO-202AA Abstract: 1N5555 military part marking symbols jan Diode 1N5555 1N5556 1N5557 1N5558 IEC61000-4-4 JANTXV1N5555 1N6072A JANTX Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/500 DEVICES LEVELS 1N5555 1N5557	Original	PDF	MIL-PRF-19500/500 1N5555 1N5557 1N5556 1N5558 1N5555 1N5558 T4-LDS-0094 DO-13 DO-202AA military part marking symbols jan Diode 1N5555 1N5556 1N5557 IEC61000-4-4 JANTXV1N5555 1N6072A JANTX
1N5629a Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C	Original	PDF	1N5555 1N5558 1N5907 1N5629A 1N5665A 1N5629A 1N5630A 1N5645A series 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
lN555 Abstract: 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557 1N5558 1N5559 Text: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5	OCR Scan	PDF	1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 lN555 1N5557 1N5559
D0-202AA Abstract: No abstract text available Text: Microsemi Corp. f The d*xte experts SANTA ANA, CA SCOTTSDALE, AZ / For more information call: 682 941-6300 FEATURES 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S	OCR Scan	PDF	1N5555 1N5556 1N5557 1N5558 DO-13 MIL-S-19500/500 D0-202AA
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent	OCR Scan	PDF	1N5555 1N5556 1N5557 1N5558 1N5555 1N5558 DO-13
Untitled Abstract: No abstract text available Text: Microsemi Corp. SANTA ANA, CA SCOTTSDALE, A l For m ore inform ation call: 602 941-6300 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION ZENER FEATURES • PROTECTS CIRCUITS FROM HARM FUL TRANSIENTS • ABSORBS TRANSIENTS UP TO I500 WATTS FOR IM S • CLAMPING RESPONSE TIM E OF I PICO SECOND	OCR Scan	PDF	1N5555 1N5556 1N5557 1N5558 MIL-S-19500/500
Untitled Abstract: No abstract text available Text: asi 1N5556 TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5556 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. _ .220” ± .005 DIA. 5.58 * .127 DIA. {mm} .10" MAX. DIA. " 2 .5 4 MAX. DIA. mm	OCR Scan	PDF	1N5556 DO-13 1N5556 Q36tf
in5556 Abstract: DO13 package IN5555 silicon transient suppressor diodes transient suppressor 1N5555 1N5556 1N5557 1N5558 NE017 Text: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent	OCR Scan	PDF	1N5555 1N5558 DO-13 NE017 D00D2Ã in5556 DO13 package IN5555 silicon transient suppressor diodes transient suppressor 1N5556 1N5557 NE017

Untitled Abstract: No abstract text available Text: 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent	OCR Scan	PDF	1N5555 1N5556 1N5557 1N5558 1N5558 13n---------- 1N5556 1N5557
transient suppressor diodes Abstract: 1N5555 Text: Back to Zener Diodes 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent	OCR Scan	PDF	1N5555 1N5556 1N5557 1N5558 1N5555 1N5556 1N5557 1N5558 transient suppressor diodes
1N561 JAN Abstract: IN5552 IN5618 DIODE lN555 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 Text: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5	OCR Scan	PDF	1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 1N561 JAN IN5618 DIODE lN555
1N5556 Abstract: S 437 Diode Text: 1N5556 a s ii TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5556 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. MAXIMUM RATINGS 200 A @ t = 8.33 mS Is REVERSE STAND OFF VOLTAGE Vr 40.3 V	OCR Scan	PDF	DO-13 1N5556 1N5556 S 437 Diode
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
diode IN5552 Abstract: SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE 1N5550 1N5551 js 10 watt zener diode 1N5554 Text: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. I N 5555 1N 5556 1N 5557 1N 5558 1N 5559 IN 5560 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0	OCR Scan	PDF	1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 diode IN5552 SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE js 10 watt zener diode
1N5557 Abstract: 1N5555 Text: • f a ^ ^ ^ FEATURES 1500 watts Peak Pulse Power dissipation MIL qualified per M IL -S -19500/434 Designed for DC applications Hermetically sealed package Each device 100% tested • • • • M A XIM U M R A TINGS 1500 W atts o f Peak Pulse P ow er d is	OCR Scan	PDF	IL-S-19500/434. 1N5557 1N5555
Untitled Abstract: No abstract text available Text: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.	OCR Scan	PDF	1N56S4 1N5664A 1N5665 1N5665A 1N5907 MIL-S-19500/500 1N6036 MIL-S-19500/434
2n2082 Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078 Text: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )	OCR Scan	PDF	2N3311 2N3312 2N3313 2N33ff 2N3314 2N3315 1N5555 1N5555 1N5556 1N5557 2n2082 2N2152 2N2075 2N2076 2N2153 2N2156 2N2079 2N2077 2N2078
Untitled Abstract: No abstract text available Text: GEMI INSTR/ POl i l ER . M General Semiconductor Industries, Inc. FEATURES 1500 watts Peak Pulse Power dissipation MIL qualified per MIL-S-19500/434 Designed for DC applications Hermetically sealed package Each device 100% tested MAXIMUM RATINGS • 1500 watts of Peak Pulse Power dis	OCR Scan	PDF	MIL-S-19500/434 DO-13

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1N5556 Price and Stock

Microchip Technology Inc 1N5556

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1N5556 Datasheets (13)

1N5556 Datasheets Context Search

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Untitled

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DO-202AA

1N6762

1N5907 JANTX

DO-202AA

1N5629a

lN555

D0-202AA

Untitled

Untitled

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in5556

Untitled

transient suppressor diodes

1N561 JAN

1N5556

IC HXJ 2038

diode IN5552

1N5557

Untitled

2n2082

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