1N5399S Search Results

1N5399S Price and Stock

Filter by Manufacturer


Diodes Incorporated 1N5399S-T DIODE GEN PURP 1KV 1.5A DO41
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5399S-T	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.0396	Buy Now
Diodes Incorporated 1N5399S_HF STANDARD RECOVERY RECTIFIER DO-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5399S_HF	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.02496	Buy Now
Avnet Americas	1N5399S_HF	Reel		8 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.01138	Buy Now
	1N5399S_HF	Reel		8 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.66518	Buy Now
Mouser Electronics	1N5399S_HF					1 $0.17 10 $0.118 100 $0.064 1000 $0.035 10000 $0.023	Get Quote
Diotec Semiconductor AG 1N5399 Diode - DO-15 - 1000V - 1.5A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	1N5399		16,000			1 - 10 - 100 - 1000 - 10000 $0.0212	Buy Now
NTE Electronics Inc 1N5399 Diode 1KV 2A 2-Pin DO-15
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	1N5399		1,001			1 - 10 - 100 - 1000 $0.1367 10000 $0.0997	Buy Now
Rectron Semiconductor 1N5399
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	1N5399					1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 1N5399S price and stock on Findchips.com

1N5399S Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
1N5399S	Diodes	1.5A RECTIFIER	Original	PDF
1N5399S	Diodes	Short Form Selection Guide	Original	PDF
1N5399S	Diodes	1.5 A Rectifier	Original	PDF
1N5399S	Lite-On Technology	1000V, 1.5A plastic silicon rectifier	Original	PDF
1N5399S	Vishay Siliconix	1.5A Rectifier	Original	PDF
1N5399/S	Vishay Telefunken	1.5A Rectifier	Original	PDF
1N5399S-A	Diodes	RECTIFIER STANDARD SINGLE 1.5A 1000V 1000 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/AMMO	Original	PDF
1N5399S-B	Diodes	RECTIFIER STANDARD SINGLE 1.5A 1000V 1000 50A-ifsm 5uA-ir 1.1V-vf DO-41 1K/BULK	Original	PDF
1N5399S-T	Diodes	RECTIFIER STANDARD SINGLE 1.5A 1000V 1000 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/REEL-13	Original	PDF

1N5399S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1N5399S Abstract: 1N5391S Text: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202, 1N5399S
Untitled Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR 1N5391S – 1N5399S 1.5A SILICON RECTIFIER Data Sheet 2579, Rev. — Features Diffused Junction	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202,
1N5391S Abstract: 1N5399S Text: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202, 1N5399S
Untitled Abstract: No abstract text available Text: 1N5391S - 1N5399S 1.5 AMPS Silicon Rectifiers DO-41 Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202, 1N5391S
Untitled Abstract: No abstract text available Text: 1N5391S thru 1N5399S Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition	Original	PDF	1N5391S 1N5399S 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1406002
1n5399s Abstract: No abstract text available Text: SENSITRON SEMICONDUCTOR 1N5391S – 1N5399S 1.5A SILICON RECTIFIER Data Sheet 2579, Rev. — Features Diffused Junction	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202, 1n5399s
Untitled Abstract: No abstract text available Text: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode	Original	PDF	DO-41 1N5391S 1N5399S DO-41 MIL-STD-202, 260/10s 1N539XS 1N5392S1N5399S 1N5391S 50mVp-p
1N5399S Abstract: 1N5391S Text: 1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost • High current capability • Plastic package has Underwriters Laboratory Flammabiliy Classification 94V-O ctilizing Flame Retardant	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202, 1N5399S
1N5391S Abstract: 1N5399S Text: 1N5391S THRU 1N5399S 1.5 AMPS. Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 1.5 Amperes DO-41 Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-O rate flame retardant	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202, 260oC/10 25ambient 1N5392S-1N5399S 1N5399S
1N5399S Abstract: 1N5391S Text: LITE-ON SEMICONDUCTOR 1N5391S thru 1N5399S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes PLASTIC SILICON RECTIFIERS DO-41 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition 94V-0	Original	PDF	1N5391S 1N5399S DO-41 DO-41 1N5399S
Untitled Abstract: No abstract text available Text: 1N5391S THRU 1N5399S 硅整流二极管 General Purpose Rectifier •外形尺寸和印记 Features ● Io 1.5A ●VRRM 50V-1000V ●耐正向浪涌电流能力高 ●High surge current capability ■用途 Outline Dimensions and Mark DO-204AL DO-41 .205(5.21)	Original	PDF	1N5391S 1N5399S 0V-1000V DO-204AL DO-41 300us 22-Sep-11 21yangjie
1N5391S Abstract: 1N5399S Text: 1N5391S - 1N5399S 1.5 AMPS. Silicon Rectifiers DO-41 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free., solderable	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202, oC/10 1N5392S-1N5399S 1N5391S 1N5399S
Untitled Abstract: No abstract text available Text: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode	Original	PDF	1N5391S 1N5399S DO-41 MIL-STD-202, 1N539XS 1N5392S1N5399S 1N5391S 50mVp-p
1N5391S Abstract: 1N5399S Text: LITE-ON SEMICONDUCTOR 1N5391S thru 1N5399S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes PLASTIC SILICON RECTIFIERS DO-41 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition 94V-0	Original	PDF	1N5391S 1N5399S DO-41 DO-41 300us 01-Dec-2000, KDAC02 1N5399S

SMD Transistors w04 sot-23 Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.	Original	PDF	represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
MUR1560 equivalent Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in	Original	PDF	MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	PDF	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	PDF	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Diode 1N4007 DO-7 Rectifier Diode Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced	Original	PDF	MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
smd marking 911 zener Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.	Original	PDF	M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
CAT7105CA Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A	Original	PDF	5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
I251 Abstract: n5392 1N5391S 1N5399S Text: E TAIWAN 1N5391S - 1N5399S SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers tò RoHS DO-41 COM PLIANCE 1 ,1 C 7 '2 . n .0 8 0 ¡2 .0 ; DW . -J E J - Features o •> ■> ❖ <r 1 .3 ÌZ5.-1I M IN. I-p. h .205 -fi.2} High efficiency. Law VF High current capability	OCR Scan	PDF	1N5391S 1N5399S DO-41 mil-STD-202. 1N5391STHRU1N5399S) I251 n5392 1N5399S
1N5391S Abstract: 1N5399S Text: IM 1N5391S - 1N5399S TAIWAN SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features .205 5.2 .166 (4.2) High current capability, Low VF. -0- High reliability & Current capability. High surge current capability. Low power loss, high efficiency.	OCR Scan	PDF	1N5391S 1N5399S DO-41 1N539XS MIL-STD-202, 260oC/10 1N5399S)
Untitled Abstract: No abstract text available Text: 1N5391S 1N5399S THRU SILICON RECTIFIERS FEATURES: DO-2Q4AL DO-41 • Low cost • • • • 0.107(2.7) 0.080(2.0) DIA. High surge current capability Low leakage current Low forward voltage drop Diffused junction MECHANICAL DATA Case : Molded plastic use UL 94V-0 recognized flame	OCR Scan	PDF	1N5391S 1N5399S DO-41 MIL-STD-202,

Privacy Settings

1N5399S Search Results

1N5399S Price and Stock

Diodes Incorporated 1N5399S-T

Diodes Incorporated 1N5399S_HF

Diotec Semiconductor AG 1N5399

NTE Electronics Inc 1N5399

Rectron Semiconductor 1N5399

1N5399S Datasheets (9)

1N5399S Datasheets Context Search

1N5399S

Untitled

1N5391S

Untitled

Untitled

1n5399s

Untitled

1N5399S

1N5391S

1N5399S

Untitled

1N5391S

Untitled

1N5391S

SMD Transistors w04 sot-23

MUR1560 equivalent

1n5822 trr

OZ 9983

Diode 1N4007 DO-7 Rectifier Diode

smd marking 911 zener

CAT7105CA

I251

1N5391S

Untitled