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    1N5195UR Price and Stock

    Microchip Technology Inc 1N5195UR

    DIODE GP 180V 200MA DO213AA
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    Microchip Technology Inc 1N5195UR-TR

    DIODE GP 180V 200MA DO213AA
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    DigiKey 1N5195UR-TR Reel 114
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    Microchip Technology Inc JAN1N5195UR

    DIODE GP 180V 200MA DO213AA
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    Avnet Americas JAN1N5195UR Reel 22 Weeks 100
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    Microchip Technology Inc JAN1N5195UR-1

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    DigiKey JAN1N5195UR-1 Bulk 100
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    Microchip Technology Inc JAN1N5195UR-TR

    DIODE GP 180V 200MA DO213AA
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    DigiKey JAN1N5195UR-TR Reel 100
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    1N5195UR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5195UR Microsemi GENERAL PURPOSE SILICON DIODE Original PDF
    1N5195UR Microsemi LL-35 High Voltage / Current Low Leakage Glass Diodes Original PDF

    1N5195UR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5195UR

    Abstract: CDLL5195 DO-213AA LL5195
    Text: FEATURES 1N5195UR • 1N5195UR AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL5195, CDLL5195, & MLL5195 MAXIMUM RATINGS AT 25 °C


    Original     		PDF 1N5195UR 1N5195UR LL5195, CDLL5195, MLL5195 500mW 200mA MILPRF-19500/118 DO-213AA CDLL5195 LL5195

    dc dc for CDI Circuit

    Abstract: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, dc dc for CDI Circuit 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 DO-213AA LL34

    Untitled

    Abstract: No abstract text available
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR,

    CDLL5195

    Abstract: CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194
    Text: 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MIL-PRF-19500/118 650mA IN5194UR IN5196UR, CDLL5195 CDLL5196 DO-213AA LL34 1N5194UR 1N5195UR 1N5196UR CDLL5194

    LDS-0034

    Abstract: 1N5195UR DO-213AA
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118


    Original     		PDF MIL-PRF-19500/118 1N5195UR 500mW 200mA MILPRF-19500/118 DO-213AA LDS-0034 1N5195UR

    1N483B

    Abstract: 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR
    Text: INCH-POUND MIL-PRF-19500/118J w/AMENDMENT 1 11 July 2010 SUPERSEDING MIL-PRF-19500/118J 27 March 2008 The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 October 2010. PERFORMANCE SPECIFICATION SHEET


    Original     		PDF MIL-PRF-19500/118J 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR, 1N483B 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND MIL-PRF-19500/118H 19 July 2007 SUPERSEDING MIL-PRF-19500/118G 22 June 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,


    Original     		PDF MIL-PRF-19500/118H MIL-PRF-19500/118G 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR,