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    Untitled

    Abstract: No abstract text available
    Text: 1 1 234567481 19ABCDEF1BE11711 1 A !" #$%1 "& DEB'EB*D1,1*B B(B1+-1 1 .B/1D(1E1-7011901 


    Original     		19ABCDEF1 D1234567481 12344356743895A86BCDEF D234435343895A8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 123456778 19ABCDEFEAEEE5CFADE541 123456789A6BC3DEF7989A6 E 33 BF 3 A8 3 7B66EC 3 B6 3 7B66EC 3 A5858 3 9EF 3 B 3 57! 3 B6 3 C96EB3 E"5CB8A 3 B6 3 8#A 3 $F2 3 %8 3 9F 3 9"C& 3 F598BCE 3 BF 3 B 3 F5C& 3 B6 3 A5858 3 F8B"E 3 'A 3 B6&3


    Original     		19ABCDEF 123456789A6BC3DEF7 B66EC C96EB F598B C97B89A6F3F57 3968E 234EB85 3C96EB PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original     		AOD4126/AOI4126 AOD4126 AOI4126 19ABCDEF O-251A PDF

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    Abstract: No abstract text available
    Text: AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		AOD488 AOD488 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD2610 60V N-Channel MOSFET General Description Product Summary The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


    Original     		AOD2610 AOD2610 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD484 30V N-Channel MOSFET General Description Features The AOD484 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 30V


    Original     		AOD484 AOD484 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high


    Original     		AOD413A AOD413A 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD474B 75V N-Channel MOSFET General Description Product Summary The AOD474B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AOD474B AOD474B 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD2910 100V N-Channel MOSFET General Description Product Summary The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		AOD2910 AOD2910 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD2816 80V N-Channel MOSFET General Description Product Summary The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely


    Original     		AOD2816 AOD2816 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD498 100V N-Channel MOSFET General Description Product Summary The AOD498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AOD498 AOD498 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD2810 80V N-Channel MOSFET General Description Product Summary The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely


    Original     		AOD2810 AOD2810 19ABCDEF PDF

    AOD4454

    Abstract: No abstract text available
    Text: AOD4454 150V N-Channel MOSFET General Description Product Summary The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AOD4454 AOD4454 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high


    Original     		AOD403/AOI403 AOD403/AOI403 19ABCDEF O251A PDF

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    Abstract: No abstract text available
    Text: AOD496A 30V N-Channel MOSFET General Description Product Summary The AOD496A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V)


    Original     		AOD496A AOD496A 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD200 30V N-Channel MOSFET General Description Product Summary The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


    Original     		AOD200 AOD200 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD474 75V N-Channel MOSFET General Description Product Summary The AOD474 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,


    Original     		AOD474 AOD474 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD2210 200V N-Channel MOSFET General Description Product Summary The AOD2210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an


    Original     		AOD2210 AOD2210 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD424 20V N-Channel MOSFET General Description Product Summary The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		AOD424 AOD424 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD450 200V N-Channel MOSFET General Description Product Summary The AOD450 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications.


    Original     		AOD450 AOD450 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high


    Original     		AOD454A AOD454A 19ABCDEF PDF

    63D12

    Abstract: No abstract text available
    Text: 1 111111111111111 1111111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789AB1CDEDFD1C111 11111111 11 11111111 1 11111 1 1 D12F 123314567891A758BCD814E1F3D167D1F1C5A36 DE1EDD1 77! "#$%&' 1 77!1*+,2-.1+C1FF1$%&1DDEDC


    Original     		23456789AB1CDEDF 123314567891A758BCD814E1F3 167D1 23456789AB18D 631A75CD99 6E14D1 C75C5 7553D7 D18D9 91469D815 63D12 PDF

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    Abstract: No abstract text available
    Text: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		AOD425 AOD425 19ABCDEF PDF

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    Abstract: No abstract text available
    Text: AOD2606 60V N-Channel MOSFET General Description Product Summary The AOD2606 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely


    Original     		AOD2606 AOD2606 19ABCDEF PDF