Untitled
Abstract: No abstract text available
Text: FX5545G402 Vishay Industry Smallest and Low Profile 5W 1A DC/DC Boost Converter with High Output Density Power FEATURES • Fully integrated DC/DC converter • High efficiency over large load range • 2MHz switching frequency • 100% duty cycle • Power density - more than 150W/inch3
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FX5545G402
50W/inch3
1000mA
6063B
4815A
18-Aug-03
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SUP40N10-30
Abstract: pd107
Text: SUP40N10-30 Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 40 0.034 @ VGS = 6 V 37.5 FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive
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SUP40N10-30
O-220AB
08-Apr-05
SUP40N10-30
pd107
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mosfet 4800
Abstract: Si7880DP Si7880DP-T1 4800 mosfet
Text: Si7880DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 29 0.00425 @ VGS = 4.5 V 25 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
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Si7880DP
07-mm
Si7880DP-T1
S-31727--Rev.
18-Aug-03
mosfet 4800
4800 mosfet
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Si7440DP
Abstract: Si7440DP-T1
Text: Si7440DP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 21 0.008 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
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Si7440DP
07-mm
Si7440DP-T1
S-31728--Rev.
18-Aug-03
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SUY50N03-10CP
Abstract: No abstract text available
Text: SUY50N03-10CP Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D 100% Rg Tested PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 15 0.012 @ VGS = 4.5 V 18 V(BR)DSS (V)
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SUY50N03-10CP
O-251
18-Jul-08
SUY50N03-10CP
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SUD70N02-04P
Abstract: No abstract text available
Text: SUD70N02-04P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0037 @ VGS = 10 V 37 0.0061 @ VGS = 4.5 V 29 APPLICATIONS VDS (V) 20 Drain Connected to Tab D D Synchronous Buck Converter - Low Side D Synchronous Rectifier
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SUD70N02-04P
O-252
18-Jul-08
SUD70N02-04P
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Si3454DV-T1
Abstract: Si3454DV
Text: Si3454DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V 4.2 0.095 @ VGS = 4.5 V 3.4 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm
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Si3454DV
Si3454DV-T1
18-Jul-08
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71641
Abstract: SUD15N15-95
Text: SUD15N15-95 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.095 @ VGS = 10 V 15 0.100 @ VGS = 6 V 15 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D 100% Rg Tested APPLICATIONS D Primary Side Switch
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SUD15N15-95
O-252
18-Jul-08
71641
SUD15N15-95
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Si4852DY
Abstract: Si4852DY-T1
Text: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage
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Si4852DY
Si4852DY-T1
18-Jul-08
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Si3420DV
Abstract: Si3420DV-T1 si3420
Text: Si3420DV Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V 0.5 D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G 3 4 2.85 mm (4) S Ordering Information: Si3420DV-T1 N-Channel MOSFET
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Si3420DV
Si3420DV-T1
08-Apr-05
si3420
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Si4390DY
Abstract: Si4390DY-T1
Text: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFETr FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 12.5 0.0135 @ VGS = 4.5 V
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Si4390DY
Si4390DY-T1
S-31726--Rev.
18-Aug-03
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Untitled
Abstract: No abstract text available
Text: FX5545G106 Vishay Industry Smallest and Low Profile 10W 2A DC/DC Boost Converter with High Output Density Power FEATURES • Fully integrated DC/DC converter • High efficiency over large load range • 100% duty cycle • Power density - more than 380W/inch3
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FX5545G106
80W/inch3
6063B
4815A
18-Aug-03
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SUD50N03-06P
Abstract: No abstract text available
Text: SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 @ VGS = 10 V 84b 0.0095 @ VGS = 4.5 V 59b APPLICATIONS VDS (V) 30 TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for Low-Side Synchronous Rectifier Operation
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SUD50N03-06P
O-252
S-31724--Rev.
18-Aug-03
SUD50N03-06P
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Si7842DP
Abstract: No abstract text available
Text: Si7842DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 D LITTLE FOOT Plust Schottky D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
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Si7842DP
07-mm
Si7842DP-T1
S-31728--Rev.
18-Aug-03
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Si7390DP
Abstract: Si7390DP-T1
Text: Si7390DP New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
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Si7390DP
07-mm
Si7390DP-T1
S-31728--Rev.
18-Aug-03
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Si2318DS
Abstract: Si2318DS-T1 C8 MARKING
Text: Si2318DS Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G
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Si2318DS
O-236
OT-23)
Si2318DS-T1
S-31731--Rev.
18-Aug-03
C8 MARKING
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Si7540DP
Abstract: No abstract text available
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P Channel P-Channel - 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = - 4.5 V - 8.9 0.053 @ VGS = - 2.5 V - 6.9
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Si7540DP
07-mm
500-kHz
S-31728--Rev.
18-Aug-03
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SUD50N03-11
Abstract: No abstract text available
Text: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) 30 ID D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested (A)a 0.011 @ VGS = 10 V 50 0.017 @ VGS = 4.5 V 43 D TO-252 Drain Connected to Tab
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SUD50N03-11
O-252
S-31724--Rev.
18-Aug-03
SUD50N03-11
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Si7844DP
Abstract: Si7844DP-T1
Text: Si7844DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) rDS(on) (W) 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 PowerPAKr SO-8 D1 S1 6.15 mm D1 D2 D2 5.15 mm 1 G1 2
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Si7844DP
Si7844DP-T1
S-31728--Rev.
18-Aug-03
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Si7846DP
Abstract: Si7846DP-T1
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)
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Si7846DP
07-mm
Si7846DP-T1
S-31728--Rev.
18-Aug-03
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SUD50N02-06
Abstract: No abstract text available
Text: SUD50N02-06 Vishay Siliconix N-Channel 20-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, b 0.006 @ VGS = 4.5 V 30 0.009 @ VGS = 2.5 V 25 VDS (V) 20 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252
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SUD50N02-06
O-252
S-31724--Rev.
18-Aug-03
SUD50N02-06
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Untitled
Abstract: No abstract text available
Text: DG2032 Vishay Siliconix New Product High-Bandwidth, Low Voltage, Dual SPDT Analog Switch FEATURES BENEFITS D Single Supply 1.8 V to 5.5 V D Low On-Resistance - rON: 2.4 W D Crosstalk and Off Isolation: -81 dB @ 1 MHz D QFN-12 (3 x 3 mm) Package D D D D D
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DG2032
QFN-12
DG2032
DG2032â
18-Jul-08
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BTA 16 6008
Abstract: bta 06 400 v BTA 06 600 T application note BTA 600 Si4824DY Si4824DY-T1
Text: Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V N Channel 1 N-Channel 30 N Channel 2 N-Channel rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 4.7 0.065 @ VGS = 4.5 V 3.7 0.0175 @ VGS = 10 V 9 0.027 @ VGS = 4.5 V
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Si4824DY
Si4824DY-T1
S-31726--Rev.
18-Aug-03
BTA 16 6008
bta 06 400 v
BTA 06 600 T application note
BTA 600
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trans* 72151
Abstract: No abstract text available
Text: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0115 @ VGS = 10 V 12.5 0.0165 @ VGS = 4.5 V
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Si4392DY
Si4392DY-T1
S--31726--Rev.
18-Aug-03
trans* 72151
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