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CR Seals 180X220X16 HS8 V Single Lip Oil Seal, I.D. 180 mm, O.D. 220 mm, Thickness 16 mm \| CR Seals (SKF) 180X220X16 HS8 V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	180X220X16 HS8 V	Bulk		4 Weeks	1	1 $556.36 10 $556.36 100 $556.36 1000 $556.36 10000 $556.36	Get Quote
CR Seals 180X220X15 HDS2 V Single Lip Oil Seal, I.D. 180 mm, O.D. 220 mm, Thickness 15 mm \| CR Seals (SKF) 180X220X15 HDS2 V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	180X220X15 HDS2 V	Bulk		4 Weeks	1	1 $665.42 10 $665.42 100 $665.42 1000 $665.42 10000 $665.42	Get Quote
CR Seals 180X220X16 HDS1 V Single Lip Oil Seal, I.D. 180 mm, O.D. 220 mm, Thickness 16 mm \| CR Seals (SKF) 180X220X16 HDS1 V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	180X220X16 HDS1 V	Bulk		4 Weeks	1	1 $640.81 10 $640.81 100 $640.81 1000 $640.81 10000 $640.81	Get Quote
CR Seals 180X220X16 HSS8 V Radial Shaft Seal, I.D. 180 mm, O.D. 220 mm, Thickness 16 mm \| CR Seals (SKF) 180X220X16 HSS8 V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	180X220X16 HSS8 V	Bulk		4 Weeks	1	1 $558.37 10 $558.37 100 $558.37 1000 $558.37 10000 $558.37	Get Quote
CR Seals 180X220X16 HDS2 R Single Lip Oil Seal, I.D. 180 mm, O.D. 220 mm, Thickness 16 mm \| CR Seals (SKF) 180X220X16 HDS2 R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	180X220X16 HDS2 R	Bulk		4 Weeks	1	1 $637.99 10 $637.99 100 $637.99 1000 $637.99 10000 $637.99	Get Quote

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180X220 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IPC-SM-780 Abstract: VN20NSP VN20N VN20SP Text: APPLICATION NOTE  PowerSO-10TM: A NEW SURFACE MOUNT POWER PACKAGE by A. Ehnert, V. Sukumar and J. Diot ABSTRACT A new surface mount power package is introduced in this paper. Todaythere is a great need for a true high power surface mount package. This power package was designed	Original	PDF	PowerSO-10TM: PowerSO-10 O-220 1999STMicroelectronics IPC-SM-780 VN20NSP VN20N VN20SP
TO220S - TO-220 Heatsink Small - Aluminium Abstract: IPC-SM-780 "Intelligent Power Devices" VN20NSP IPC-SM-785 VN20SP Text: APPLICATION NOTE PowerSO-10TM: A NEW SURFACE MOUNT POWER PACKAGE by A. Ehnert, V. Sukumar and J. Diot ABSTRACT A new surface mount power package is introduced in this paper. Today there is a great need for a true high power surface mount package. This power package was designed	Original	PDF	PowerSO-10TM: PowerSO-10 O-220 TO220S - TO-220 Heatsink Small - Aluminium IPC-SM-780 "Intelligent Power Devices" VN20NSP IPC-SM-785 VN20SP
Untitled Abstract: No abstract text available Text: / = T SGS-THOMSON [^ MttJ(êir[EMD(g§ 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:	OCR Scan	PDF	180x220 20x16 IRF740
C0073 Abstract: f740 Text: {Z71T,» SGS-THOMSON SKaOfflQIlLlKg'u’M O e i IR F 740 CHIP * N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:	OCR Scan	PDF	180x220 C-0073 C0073 f740
transistor IRF740 Abstract: irf740 transistor IRF740 Text: 3QE I D D 7 ciS c1 53 7 O Q 3Q m O fl • S G S-THOMSON SGS-THOMSON ' "~p3Q ^ 3 I[LiraMO gS IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A	OCR Scan	PDF	0Q3Q14Q IRF740 180x220 29x23 20x16 transistor IRF740 irf740 transistor
1.2 Micron CMOS Process Family Abstract: CMOS GATE ARRAYs Text: High Reliability Fast CMOS Gate Arrays U N IV E R S A L S E M IC O N D U C T O R INC. ranging from 100 to 6000 equivalent gates and a maximum pin count ranging from 24 to 120. FEATURES: • • • • • Single & Dual Layer Metal Source/D rain Contacts Programmable	OCR Scan	PDF
vexta Abstract: mje 3001 RESISTOR BF 0207 BF243 BF 184 transistor NPN/NF 034 BF249 VAR10 bf345 BETA-240 Text: Semi-Custom & Custom Solutions Calogic designs and manufactures Semi-Custom and Custom Bipolar Junction Isolated Jl and Dielectrically isolated (Dl) products SPICE models, layout, DRC and ERC are available. These processes are executed in our own state of the art FAB	OCR Scan	PDF
MOSFET Termination Structure Abstract: No abstract text available Text: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands	OCR Scan	PDF	STVHD90. STVHD90 MOSFET Termination Structure
Untitled Abstract: No abstract text available Text: High Reliability Fast CMOS Gate Arrays UNIVERSAL SEMICONDUCTOR INC. ranging from 100 to 6000 equivalent gates and a maximum pin count ranging from 24 to 120. FEATURES: • • • • • • • • • • • • Single & Dual Layer Metal Source/D rain Contacts Programmable	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Jen: 495 739-09-95, 644-41-29 BeKTopHbie HHBepTopbi TOSHIBA cepMM VFS11 CO B C T p o e H H b IM C e T e B b IM $ M H b T p O M npMMeHaroTca flna riMTaHM^ Tpex#a3Hbix flBMraieneM nepeMeHHoro TOKa. MHBepTopw ocHOBaHH Ha npMHU,Mne ynpaBneHMA BeKTopoM MarnMTHoro nona 6e3	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: , . , Universal Semiconduc tot HIGH RELIABILITY FAST CMOS GATE arrays FEATURES : ISO-2/ISO-3/ISO-5 GATE ARRAY DESCRIPTION . The ISO 2 /3 /5 series o f silicon gate CMOS arrays are high perform ance fam ilies o f eleven arrays each w ifh co m p le xity ranging from 100 to 2 4 0 0 equivalent gates and a m axim um	OCR Scan	PDF	410x410
d 526 0 6J Abstract: No abstract text available Text: Æ T SGS-THOMSON * 7/. APPLICATION NOTE PLASTIC PACKAGES FOR POWER DISCRETES AND ICs 1.BRIEF OVERVIEW OF TECHNOLOGY The plastic package of a power chip serves four main functions: i Electrical interconnection between the silicon chip and the external circuit;	OCR Scan	PDF	PowerSO-10 d 526 0 6J
sgs mosfet Abstract: buz11 application note FZJ 101 Text: rZ J *> 7# . S C S -T H O M S O N l«BËl5i i [ L i e ï » H 0 g i APPLICATION NOTE HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET'transistor are fabricated using VLSI technology. A simple chip contains thousands	OCR Scan	PDF	STVHD90. STVHD90 sgs mosfet buz11 application note FZJ 101
pMOS NAND GATE Abstract: A540B ISO-5 Text: UNIVERSAL SEMICONDUCTORS HE D ] “=131,0341 ODGQG4S 3 \| T - «¿3.- //- 0 e] High Reliability Fast CMOS Gate Arrays UNIVERSAL SGMICONDUCTOR INC. FEATURES: • • • • • • • • •	OCR Scan	PDF	13ba311 000D0M5 410x410 390x390 pMOS NAND GATE A540B ISO-5