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Littelfuse Inc IXFN180N15P MOSFET N-CH 150V 150A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN180N15P	Tube	2,267		1	1 $28.91 10 $21.163 100 $28.91 1000 $28.91 10000 $28.91	Buy Now
Newark	IXFN180N15P	Bulk	307		1	1 $25.31 10 $19.11 100 $17.67 1000 $17.67 10000 $17.67	Buy Now
RS	IXFN180N15P	Bulk		8 Weeks	10	1 - 10 $27.89 100 $27.89 1000 $27.89 10000 $27.89	Get Quote
Littelfuse Inc IXTK180N15P MOSFET N-CH 150V 180A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTK180N15P	Tube	331		1	1 $17.22 10 $17.22 100 $17.22 1000 $9.32438 10000 $9.32438	Buy Now
Nisshinbo Micro Devices R1180N151B-TR-FE IC REG LINEAR 1.5V 150MA SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1180N151B-TR-FE	Digi-Reel	90		1	1 $0.58 10 $0.408 100 $0.3182 1000 $0.27126 10000 $0.27126	Buy Now
	R1180N151B-TR-FE	Cut Tape	90		1	1 $0.58 10 $0.408 100 $0.3182 1000 $0.27126 10000 $0.27126	Buy Now
	R1180N151B-TR-FE	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.25753	Buy Now
Mouser Electronics	R1180N151B-TR-FE		94			1 $0.58 10 $0.366 100 $0.296 1000 $0.272 10000 $0.239	Buy Now
Littelfuse Inc IXFX180N15P MOSFET N-CH 150V 180A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX180N15P	Tube	55		1	1 $15.16 10 $15.16 100 $9.86133 1000 $15.16 10000 $15.16	Buy Now
Newark	IXFX180N15P	Bulk			300	1 - 10 - 100 - 1000 $9.78 10000 $9.78	Buy Now
IXYS Corporation IXTK180N15 MOSFET N-CH 150V 180A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTK180N15	Tube			30	1 - 10 - 100 $10.58767 1000 $10.58767 10000 $10.58767	Buy Now

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180N15 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
I 508 V Abstract: 180N15P IXTK180N15P Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VDSS VGSM Continuous	Original	180N15P I 508 V 180N15P IXTK180N15P	PDF
680-W Abstract: 180N15P IXFN180N15P Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous	Original	180N15P 03-23-06-C 680-W 180N15P IXFN180N15P	PDF
180n15p Abstract: 180N15 PLUS247 IXFX180N15P Text: PolarTM HiPerFET Power MOSFET IXFK 180N15P IXFX 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	180N15P -55ombs 180n15p 180N15 PLUS247 IXFX180N15P	PDF
IXTK180N15P Abstract: No abstract text available Text: PolarHTTM Power MOSFET IXTK 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 10 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VDSS VGSM	Original	180N15P IXTK180N15P	PDF
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS = 150 V ID25 = 180 A RDS on ≤ 10 m Ω IXTK 180N15P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VDSS VGSM	Original	180N15P	PDF
180N15 Abstract: No abstract text available Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ	Original	180N15 O-264 728B1 180N15	PDF
Untitled Abstract: No abstract text available Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous	Original	180N15P OT-227 E153432 03-23-06-C	PDF
Untitled Abstract: No abstract text available Text: PolarTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr IXFK 180N15P IXFX 180N15P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	180N15P	PDF
180N15 Abstract: No abstract text available Text: Advance Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ IXFK 180N15P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100	Original	180N15P O-264 180N15	PDF
180N15 Abstract: No abstract text available Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ	Original	180N15 728B1 180N15	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFR 180N15P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = = ≤ ≤ 150 V 100 A Ω 13 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	180N15P ISOPLUS247TM 03-23-06-C	PDF
IXFR 180N15P Abstract: fd 715 ISOPLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFR 180N15P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = = ≤ ≤ 150 V 100 A Ω 13 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C	Original	180N15P ISOPLUS247TM 03-23-06-C IXFR 180N15P fd 715 ISOPLUS247	PDF
180N15 Abstract: No abstract text available Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150	Original	180N15 728B1 123B1 728B1 065B1 180N15	PDF
Untitled Abstract: No abstract text available Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS Continuous	Original	180N15 O-264 728B1	PDF

180N15 Abstract: 123B16 Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS	Original	180N15 728B1 123B1 728B1 065B1 180N15 123B16	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP	PDF

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180N15 Search Results

180N15 Price and Stock

Littelfuse Inc IXFN180N15P

Littelfuse Inc IXTK180N15P

Nisshinbo Micro Devices R1180N151B-TR-FE

Littelfuse Inc IXFX180N15P

IXYS Corporation IXTK180N15

180N15 Datasheets Context Search

I 508 V

680-W

180n15p

IXTK180N15P

Untitled

180N15

Untitled

Untitled

180N15

180N15

Untitled

IXFR 180N15P

180N15

Untitled

180N15

IXTD08N100P-1A

7N60B equivalent

STW20N60

DIODE 1334