Untitled
Abstract: No abstract text available
Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1800 to 2000 MHz. These devices
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PTMA180402EL
PTMA180402FL
PTMA180402EL
PTMA180402FL
40-watt,
H-33265-8
H-34265-8
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Infineon moisture sensitive package
Abstract: PTMA210152M RO4350 68c21
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
28ubstances.
Infineon moisture sensitive package
RO4350
68c21
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PTMA210152M
Abstract: RO4350 Infineon moisture sensitive package
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in
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PTMA210152M
PTMA210152M
15-watt,
20-lead
RO4350
Infineon moisture sensitive package
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PTMA210152
Abstract: PTMA210152M PCC104bct-nd 210152 PTMA210152M V1 PCC104BCTND RO4350 3224W-202ETR-ND P00ECT-ND PCE3718CT-ND
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PTMA210152
PCC104bct-nd
210152
PTMA210152M V1
PCC104BCTND
RO4350
3224W-202ETR-ND
P00ECT-ND
PCE3718CT-ND
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CD723
Abstract: No abstract text available
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
CD723
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 30 Watts, 1800-2000 MHz PTF 102079* Description Key Features The PTF 102079 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 1800 to 2000 MHz. This LDMOS device operates at 47% efficiency with 15 dB gain. Nitride
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1-877-GOLDMOS
1522-PTF
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J499
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
28ances.
J499
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Untitled
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
pxac201202fc-gr1a
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PTMA180152M
Abstract: MO 1877 01 MO-166
Text: Preliminary PTMA180152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2000 MHz PTMA180152M* Package DSO-20-63 Description The PTMA180152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2000 MHz band. This device is offered in
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PTMA180152M
PTMA180152M
15-watt,
20-lead
PTMA180152M*
DSO-20-63
50-ohm
10-ohm
MO 1877 01
MO-166
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Untitled
Abstract: No abstract text available
Text: PTMA210152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermallyenhanced overmolded package for cool and reliable operation.
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
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BGF1801-10
Abstract: BLF1049 BGF944 ACPR400 BGF1901-10 BGF844 BLF0810-90 BLF1820-90 gsm power amplifiers 10 w BLF1
Text: EDGE GSM amplifiers Modular solutions for for base-stations 800/900/1800/1900 MHz Covering the 800, 900, 1800 and 1900 MHz ranges for power amplifiers in EDGE GSM cellular base-stations, these high-performance solutions combine a 50-Ω driver module with a final-stage transistor. Identical component outlines for
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GRM422Y5V106Z050AL
Abstract: PTMA180402M RO4350
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
50-ohm
GRM422Y5V106Z050AL
RO4350
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diode C728
Abstract: RFP100200-4Y502 600S0R7BT CD 5888 IC JESD22-A114F RFP100200-4Y50-2 RFP-100200-4Y50-2 2A1306-3 PTMA210404FL R250
Text: PTMA210404FL Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package.
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PTMA210404FL
PTMA210404FL
20-watt,
H-34248-12
diode C728
RFP100200-4Y502
600S0R7BT
CD 5888 IC
JESD22-A114F
RFP100200-4Y50-2
RFP-100200-4Y50-2
2A1306-3
R250
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PTMA180402M
Abstract: PTMA180402M V1 marking
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
50-ohm
PTMA180402M V1 marking
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GRM422Y5V106Z050AL
Abstract: PTMA180402EL PTMA180402FL RO4350 H-33265-8
Text: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in
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PTMA180402EL
PTMA180402FL
PTMA180402EL
PTMA180402FL
40-watt,
H-33265-8
H-34265-8
50-ohm
GRM422Y5V106Z050AL
RO4350
H-33265-8
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PTMA180402M V1
Abstract: GRM422Y5V106Z050AL JESD22-A114-F PCE3718CT-ND transistor c 2060 PTMA180402M RO4350
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
PTMA180402M V1
GRM422Y5V106Z050AL
JESD22-A114-F
PCE3718CT-ND
transistor c 2060
RO4350
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Untitled
Abstract: No abstract text available
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
50ohm
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PTMA210404FL
Abstract: R250 INFINEON marking amplifier
Text: Preliminary PTMA210404FL Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package.
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PTMA210404FL
PTMA210404FL
20-watt,
PTMA210404FL*
H-34248-12
R250
INFINEON marking amplifier
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GS -L 0.1uF Capacitor
Abstract: PTMA180402FL RO4350 GRM422Y5V106Z050AL PTMA180402EL infineon gold Marking h 498
Text: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in
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PTMA180402EL
PTMA180402FL
PTMA180402EL
PTMA180402FL
40-watt,
H-33265-8
H-34265-8
GS -L 0.1uF Capacitor
RO4350
GRM422Y5V106Z050AL
infineon gold
Marking h 498
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Untitled
Abstract: No abstract text available
Text: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in
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PTMA180402EL
PTMA180402FL
PTMA180402FL
40-watt,
H-33265-8
H-34265-8
50-ohm
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Untitled
Abstract: No abstract text available
Text: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all
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PTMA180402EL
PTMA180402FL
PTMA180402EL
PTMA180402FL
40-watt,
H-33265-8
H-34265-8
50-ohm
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P 1504 EDG
Abstract: GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
50-ohm
P 1504 EDG
GRM422Y5V106Z050AL
PTMA180402
12 pF ceramic capacitor
INFINEON 20PIN
c20vd2
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Untitled
Abstract: No abstract text available
Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications
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PTMA180402M
PTMA180402M
40-watt
20-pin,
PG-DSO-20-63
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