Si5401DC
Abstract: No abstract text available
Text: Si5401DC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −7.1 0.040 @ VGS = −2.5 V −6.4 0.053 @ VGS = −1.8 V −5.5 D D D D Qg (Typ) TrenchFETr Power MOSFET Ultra-Low On-Resistance
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Si5401DC
Si5401DC-T1--E3
08-Apr-05
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Marking 4001 Vishay
Abstract: No abstract text available
Text: RCK HR 02, 02A Vishay Sfernice Very High Precision, Very High Stability, High Reliability Resistors, Bulk Metal Foil FEATURES Four variants are available, two reliability levels are proposed: • Level B for serialized components • Level C without serialization
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08-Apr-05
Marking 4001 Vishay
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293D
Abstract: No abstract text available
Text: 293D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Commercial, Surface Mount FEATURES • Molded case available in six case codes. • Compatible with "High Volume" automatic pick and place equipment. • Optical character recognition qualified.
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QC300801/US0001
535BAAC.
793DX
PQC32/GB003
EIA-481-1.
17-Jan-05
178mm]
330mm]
293D
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8402 MOSFET
Abstract: 8402 silicon diode J-STD-020A Si8402DB Si8402DB-T1
Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Si8402DB
Si8402DB-T1
Si8402DB-T1--E1
08-Apr-05
8402 MOSFET
8402 silicon diode
J-STD-020A
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Si4856a
Abstract: Si4856ADY Si4856ADY-T1
Text: Si4856ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 17 0.0076 @ VGS = 4.5 V 14 Qg (Typ) APPLICATIONS D Buck Converter D Synchronous Rectifier
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Si4856ADY
Si4856ADY--E3
Si4856ADY-T1--E3
18-Jul-08
Si4856a
Si4856ADY-T1
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8902E
Abstract: J-STD-020A Si8902EDB
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
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Si8902EDB
8902E
08-Apr-05
8902E
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: TFDU6102 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.7 V to 5.5 V Operation Description The TFDU6102 is a low-power infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 4.0 Mbit/s (FIR), and carrier
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TFDU6102
TFDU6102
TFDU6102)
D-74025
17-Jan-05
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J-STD-020A
Abstract: Si8413DB
Text: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.048 @ VGS = −4.5 V −6.5 0.063 @ VGS = −2.5 V −5.7 Qg (Typ) 14 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Si8413DB
Si8413DB-T1--E1
S-50066--Rev.
17-Jan-05
J-STD-020A
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si4856ady
Abstract: No abstract text available
Text: Si4856ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 17 0.0076 @ VGS = 4.5 V 14 Qg (Typ) APPLICATIONS D Buck Converter D Synchronous Rectifier
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Si4856ADY
Si4856ADY--E3
Si4856ADY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Si8402DB
Si8402DB-T1
Si8402DB-T1--E1
S-50066--Rev.
17-Jan-05
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si4856A
Abstract: No abstract text available
Text: Si4856ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 17 0.0076 @ VGS = 4.5 V 14 Qg (Typ) APPLICATIONS D Buck Converter D Synchronous Rectifier
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Si4856ADY
Si4856ADY--E3
Si4856ADY-T1--E3
08-Apr-05
si4856A
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Untitled
Abstract: No abstract text available
Text: SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.155 @ VGS = −10 V −8.4 0.280 @ VGS = −4.5 V −7.4 Qg (Typ) 12 5 12.5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature
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SUD08P06-155L
O-252
SUD08P06-155L--E3
S-50036--Rev.
17-Jan-05
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J-STD-020A
Abstract: Si8415DB
Text: Si8415DB New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.037 @ VGS = −4.5 V −7.3 0.046 @ VGS = −2.5 V −6.6 0.060 @ VGS = −1.8 V −5.8 Qg (Typ) 19 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging
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Si8415DB
Si8415DB-T1--E1
MA340
S-50037--Rev.
17-Jan-05
J-STD-020A
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diode 8405
Abstract: J-STD-020A Si8405DB Si8405DB-T1 SI8405DB-T1-E1
Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −4.9 0.070 @ VGS = −2.5 V −4.4 0.090 @ VGS = −1.8 V −4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging
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Si8405DB
Si8405DB-T1
Si8405DB-T1--E1
08-Apr-05
diode 8405
J-STD-020A
SI8405DB-T1-E1
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Si4565DY
Abstract: SI4565DY-T1-E3
Text: Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel −40 40 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 5.2 0.045 @ VGS = 4.5 V 4.9 0.054 @ VGS = −10 V −4.5 0.072 @ VGS = −4.5 V
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Si4565DY
Si4565DY--E3
Si4565DY-T1--E3
S-50033--Rev.
17-Jan-05
SI4565DY-T1-E3
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J-STD-020A
Abstract: Si8902EDB
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
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Si8902EDB
8902E
S-50066--Rev.
17-Jan-05
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: TFBS4711 Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation Description The TFBS4711 is a low profile, Infrared Data Transceiver module. It supports IrDA data rates up to 115.2 kbit/s SIR . The transceiver module consists of
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TFBS4711
TFBS4711
D-74025
17-Jan-05
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Untitled
Abstract: No abstract text available
Text: Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel −40 40 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 5.2 0.045 @ VGS = 4.5 V 4.9 0.054 @ VGS = −10 V −4.5 0.072 @ VGS = −4.5 V
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Si4565DY
Si4565DY--E3
Si4565DY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: S Vishay Sfernice Current Sensing Bondable Chip Resistors FEATURES • Low ohmic value down to 0.05Ω • Tolerance down to 1% • Stability This thin film chip resistor fits applications as force balance scales, E beam deflection systems, switching power supplies,
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08-Apr-05
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SI8901
Abstract: J-STD-020A Si8901EDB
Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET
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Si8901EDB
8901E
S-50066--Rev.
17-Jan-05
SI8901
J-STD-020A
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J-STD-020A
Abstract: Si8904EDB
Text: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance
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Si8904EDB
8904E
P/N340
S-50066--Rev.
17-Jan-05
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Si8401DB
Si3443DV
Si8401DB-T1
Si8401DB-T1--E1
S-50066--Rev.
17-Jan-05
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21EN9-6
Abstract: MS25081C6 MICRO SWITCH FREEPORT. ILL. U.S.A FAA-PMA MS25081-c6 MS25081 ms25 MIL-S-8805 010of
Text: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV DOCUMENT 22 0010575 21EN9-6 C H A N G E D BY KR CHECK 17JAN05 AK FAA-PMA ROLLER GUIDE MAY BE LOCKED IN INCREMENTS OF 4 5 ° AZIMUTH. IT MAY ALSO BE UNSCREWED AND REMOVED FROM BUSHING TO FACILITATE INSTALLATION /5\
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17JAN05
21EN9-6
MIL-W-5088
MIL-S-8805
5M-1994
21EN9-6
MS25081C6
MICRO SWITCH FREEPORT. ILL. U.S.A
FAA-PMA
MS25081-c6
MS25081
ms25
010of
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marking code 82J
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT N/A RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - , N/A LOC ALL RIGHTS RESERVED. REVISIONS DIST DF DO LTR DESCRIPTION C 1. THIS CONNECTOR A S S E M B L Y CLIPS 2. INSTALLED IN THE IS S U P P LIE D
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17JAN05
31MAR2000
marking code 82J
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