175MHZ Search Results

175MHZ Result Highlights (5)

Part	Manufacturer	Description
WB2010-1-SM	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,
WB1010-1-PC	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,
WB2010-1-PC	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,
WB3010-1-PC	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,
WB1010-1-SM	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,

175MHZ Price and Stock

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NXP Semiconductors MRFX1K80H-175MHZ MRFX1K80H REF BRD 175MHZ 1560W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRFX1K80H-175MHZ	Bulk			1	1 $1350 10 $1350 100 $1350 1000 $1350 10000 $1350	Buy Now
Avnet Silica	MRFX1K80H-175MHZ			54 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	MRFX1K80H-175MHZ					1 $1950.05 10 $1950.05 100 $1950.05 1000 $1950.05 10000 $1950.05	Get Quote
Richardson RFPD	MRFX1K80H-175MHZ				1	1 $1550.68 10 $1509.87 100 $1432.58 1000 $1432.58 10000 $1432.58	Buy Now
Abracon Corporation ASM-25.175MHZ-ET XTAL OSC XO 25.1750MHZ HCMOS TTL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ASM-25.175MHZ-ET	Reel			1,000	1 - 10 - 100 - 1000 $1.17616 10000 $1.17616	Buy Now
Vishay Intertechnologies IHLP1212ABERR33M11 Power Inductors - SMD .33 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI Europe	IHLP1212ABERR33M11					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components BP0IA0175A700 Signal Conditioning 0175 MHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI Europe	BP0IA0175A700					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bourns Inc SRP1245CC-R15M Power Inductors - SMD Ind,13.5x12.5x4.8mm,0.15uH+/-20%,55A,shd
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI Europe	SRP1245CC-R15M					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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175MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transformer 0-12v Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101 Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 transformer 0-12v J101 0-12V 2204B MRF151 Transistor C2 Unelco J101
VRF141 Abstract: 28v 30MHZ MRF141 2204B Text: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF141 175MHz VRF141 30MHz, 175MHz, MRF141 28v 30MHZ MRF141 2204B
RA07M1317MS Abstract: 135175MHz ra07m1317msa Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to	Original	PDF	RA07M1317MSA 135-175MHz RA07M1317MSA 175-MHz RA07M1317MS 135175MHz
SD2941-10 Abstract: EE-19 transformer SD2931-10 VK200 Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower	Original	PDF	SD2941-10 175MHz SD2941-10 SD2931-10. EE-19 transformer SD2931-10 VK200
MRF151G Abstract: VRF151G 2204B Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast	Original	PDF	VRF151G 175MHz VRF151G 175MHz. 175MHz, MRF151G MRF151G 2204B
blf177 Abstract: 2204B MRF151 VRF152 Text: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF152 175MHz VRF152 30MHz, 175MHz, MRF151/ BLF177/ SD2941 blf177 2204B MRF151
RA30H1317M Abstract: RA30H1317M-101 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to	Original	PDF	RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz 24Jan RA30H1317M-101
RD12MVP1 Abstract: RD12MVS1 2040D Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V	Original	PDF	AN-VHF-034-B RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/17meter) RD12MVS1 2040D
RD02MUS1 Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
RD07MVS1 Abstract: RD07MVS1-101 T112 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor	Original	PDF	RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems
RA30H1317M1 Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to	Original	PDF	RA30H1317M1 135-175MHz RA30H1317M1 30-watt 175-MHz
RD07MVS1 Abstract: RD07MVS1B T112 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05	Original	PDF	RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems
RD30HVF1 Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 RD30HVF1-101 rf power transistor rd30hvf1 100OHM
RA08H1317 Abstract: RA08H1317M RA08H1317M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module	Original	PDF	RA08H1317M 08H1317 135-175MHz RA08H1317M 175-MHz RA08H1317 RA08H1317M-101

RD07MUS2B Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
NPN 2SC2782 Abstract: transistor 2sc2782 2SC2782 Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage	Original	PDF	2SC2782 175MHz, 2-13C1A 000707EAA1 175MHz NPN 2SC2782 transistor 2sc2782 2SC2782
NTE342 Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)	Original	PDF	NTE342 175MHz) NTE342 175MHz 100mA, 600mW, 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
2SC2640 Abstract: pj 71 Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz	OCR Scan	PDF	2SC2640 175MHz, 175MHz 2SC2640 pj 71
2SC1955 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0S59MAX. g ja 4 5 M A X . FEATURES : Output Power : f=175MHz, Po=2.8W (Min. Vcc=13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR	OCR Scan	PDF	2SC1955 175MHz, 0S59MAX. 175MHz -30pF 2SC1955
2SC2178 Abstract: copper wire Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pl=1.3W, f=175MHz	OCR Scan	PDF	2SC2178 175MHz, 175MHz 8-10H1A l75MHz, 2SC2178 copper wire
Untitled Abstract: No abstract text available Text: H IW «' « 2 it C r O S G iT ii V i r g i n 140 Commerce Drive M ontgom eryvilie, PA 18936-1013 le t: 215 631-9840 ^ _ . _ . _ _ SD1018-6 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS . » « . . » » FM GLASS C TRANSISTOR FREQUENCY 175MHz	OCR Scan	PDF	SD1018-6 230MHz 175MHz SD1018-8
M57796H Abstract: No abstract text available Text: □ □ li? E cn =104 • MITSUBISHI RF POWER MODULE M57796H 150-175MHz, 12.5V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING 42 ±1 37 ± 1 30 ± 1 2-R1.5 & 'S SÍ0.5 ± 0.15 9. 6 ±1 14.7 PIN : ±1 27 .4 ±1 32. 4 ±1 P in : RF INPU T © VB B	OCR Scan	PDF	M57796H 150-175MHz, DD173D1 M57796H
33PFX4 Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING	OCR Scan	PDF	2SC2782 175MHz, 2-13C1A 961001EAA2' 33PFX4 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
AD848 Abstract: No abstract text available Text: ANALOG DEVICES FEATURES 725MHz Gain Bandwidth - AD849 175MHz Gain Bandwidth - AD848 4.8mA Supply Current 300V/\|is Slew Rate 80ns Settling Time to 0.1% for a 10V Step - AD849 Differential Gain: AD848 = 0.07%, AD849 = 0.08% Differential Phase: AD848 = 0.08°, AD849 = 0.04°	OCR Scan	PDF	725MHz AD849 175MHz AD848 AD848

175MHZ Search Results

175MHZ Result Highlights (5)

175MHZ Price and Stock

NXP Semiconductors MRFX1K80H-175MHZ

Abracon Corporation ASM-25.175MHZ-ET

Vishay Intertechnologies IHLP1212ABERR33M11

Kyocera AVX Components BP0IA0175A700

Bourns Inc SRP1245CC-R15M

175MHZ Datasheets Context Search

transformer 0-12v

VRF141

RA07M1317MS

SD2941-10

MRF151G

blf177

RA30H1317M

RD12MVP1

RD02MUS1

RD07MVS1

RA30H1317M1

RD07MVS1

RD30HVF1

RA08H1317

RD07MUS2B

NPN 2SC2782

NTE342

2SC2640

2SC1955

2SC2178

Untitled

M57796H

33PFX4

AD848