175 MHZ FM Search Results

175 MHZ FM Result Highlights (5)

Part	Manufacturer	Description
WB2010-1-SM	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,
WB1010-1-PC	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,
WB2010-1-PC	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,
WB3010-1-PC	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,
WB1010-1-SM	Coilcraft Inc	RF Transformer, 0.04MHz Min, 175MHz Max, 1:1,

175 MHZ FM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
88-108 Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w Text: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest	Original	PDF
MRF151G Abstract: mrf151g 300 mosfet m Text: MRF151G Part Status: Released RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features M/A-COM Products RoHS Compliant Package Outline Guaranteed Performance at 175 MHz, 50 V: • • • • • • Output Power — 300 W	Original	PDF	MRF151G MRF151G mrf151g 300 mosfet m
BLY92C Abstract: BLY92C RF Text: BLY92C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLY92C is Designed for Class C FM Amplifier Applications up to 250 MHz. PACKAGE STYLE .380" 4L STUD FEATURES: • PG = 11 dB Typical at 175 MHz • High Load VSWR Capability • Omnigold Metalization System	Original	PDF	BLY92C BLY92C ASI10758 BLY92C RF
BLV11 Abstract: No abstract text available Text: BLV11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV11 is Designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz. FEATURES INCLUDE: • PG = 9.0 dB Typical at 175 MHz • Emitter Ballasting • Omnigold Metalization System	Original	PDF	BLV11 BLV11 ASI10492
BLY92C Abstract: No abstract text available Text: BLY92C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY92C is designed for Class C FM amplifier applications up to 250 MHz. PACKAGE STYLE .380 4L STUD A .112x45° FEATURES: • PG = 11 dB typical at 175 MHz • High VSWR capability • Omnigold Metalization System	Original	PDF	BLY92C BLY92C 112x45°
ASI10589 Abstract: FMB175 c 108 m 229 Text: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Class C Operation • PG = 10 dB at 175 W/108 MHz • Omnigold Metalization System	Original	PDF	FMB175 FMB175 ASI10589 ASI10589 c 108 m 229
Untitled Abstract: No abstract text available Text: <Silicon RF Power Modules > RA30H1721M RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 175- to 215-MHz range. The battery can be connected directly to the drain of the	Original	PDF	RA30H1721M 175-215MHz RA30H1721M 30-watt 215-MHz
Untitled Abstract: No abstract text available Text: <Silicon RF Power Modules > RA30H1721M RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1721M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 175- to 215-MHz range. The battery can be connected directly to the drain of the	Original	PDF	RA30H1721M RA30H1721M 30-watt 215-MHz
MRF173 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz	Original	PDF	MRF173 MRF173. AN721, MRF173
Untitled Abstract: No abstract text available Text: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM	Original	PDF	MS1202 MS1202
MRF173 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 200 MHz	Original	PDF	MRF173/D MRF173
Untitled Abstract: No abstract text available Text: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM	Original	PDF	MS1202 MS1202
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF247 . . . designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.	Original	PDF	MRF247/D MRF247 MRF247/D*
9552N Abstract: 8802n 5504L 2N3632 2N44 THB94 XO-72 SD1577 SD1574 CB299 Text: 130. 230 MHz C L A S S C FOR FM MOBILIE A P P L IC A T IO N S Vcc PACKAGE TYPf C O N F IG . V ^out min (W ) fo Pin (M H z) (W) Gp min (dB) 150 175 175 175 150 0,1 0,1 0,25 0,79 0,22 7 8 8 5 11 _ — — — — 175 175 175 175 175 175 175 175 175 175	OCR Scan	PDF	XO-72 O-117SL T0-220 2N3632 THB94 CB-301J O-117SL CB-299) ICB-304) 9552N 8802n 5504L 2N44 THB94 SD1577 SD1574 CB299

mrf247 Abstract: amplifier mrf247 CAPACITOR SPRAGUE L5150 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF247 The MRF247 is designed for 12.5 Volt VHF large-signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —	OCR Scan	PDF	MRF247 MRF247 amplifier mrf247 CAPACITOR SPRAGUE L5150
Untitled Abstract: No abstract text available Text: a CMOS 175 MHz DDS/DAC Synthesizer PRELIMINARY TECHNICAL DATA AD9851 FEATURES 175 MHz Clock Rate 6X Internal Reference Clock Multiplier On-chip High-performance 10-bit DAC & High-speed Comparator SFDR >48 dB@70 MHz Aout 32-bit Frequency Tuning Word Simplified Control Interface: Parallel	OCR Scan	PDF	AD9851 10-bit 32-bit 20MHz 28-pin AD9851
MRF221 Abstract: wide band choke vk200 MRF216 2N6081 VK200 VK200 ferrite broad band operation Text: M RF216 silicon Tine RF L ine 40 W — 175 MHz CONTROLLED O RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .designed for 12.5 V o lt V H F large-signal am plifier applications in industrial and commercial FM equipment operating to 175 MHz.	OCR Scan	PDF	MRF216 MRF221 2N6081 MRF221 wide band choke vk200 MRF216 VK200 VK200 ferrite broad band operation
MRF247 Abstract: mica trimmer capacitor unelco mica trimmer capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ransistor The M R F247 is designed for 12.5 Volt V H F large-signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —	OCR Scan	PDF	MRF247 mica trimmer capacitor unelco mica trimmer capacitor
inductor vk200 Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.	OCR Scan	PDF	MRF238 inductor vk200 VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
BY1-1F Abstract: BAM40 A1512 2N5070 88-108 S100-28 A8012A BY177 S175-50 2N3553 NPN Text: VHF- 30-80 MHz Type Polarity 2N5071 A15-12* A80-12* * A80-12A* * NPN NPN NPN NPN V H F -88-108 MHz FM 75 NPN FM 150 NPN VH F 130-175 2N3632 2N3553 B15-12 B30-12 B45-12 BM80-12* * BAM20* BAM40* BAM80* BAM120* MHz NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN	OCR Scan	PDF	S15-28 S30-28 2N5070 S50-28 S100-28 S15-12* S30-12 S50-12* S100-12* S175-28* BY1-1F BAM40 A1512 88-108 A8012A BY177 S175-50 2N3553 NPN
MRF247 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF247 The RF Line 75 W - 175 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r 1 2 .5 V o lt V H F large-signal am plifier applications N P N S IL IC O N in industrial and com m ercial FM equ ipm ent operating to 175 M H z.	OCR Scan	PDF	MRF247 MRF247
RF MOSFETs Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz	OCR Scan	PDF	MRF173. AN721, MRF173 RF MOSFETs motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET
t 3866 power transistor Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -	OCR Scan	PDF	2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
tic 136 Abstract: No abstract text available Text: VHF Applications High Band FM 136-175 MHz PART NO. FREQ. Pout Pin GAIN TIC Min W (W) Min (dB) Min (MHz) MS1403 150 1.4 0.1 MS1401 150 2.5 MS1504 160 MS1506 Vcc 6jC PKG Max STYLE (%) (V) (°C/W) 11.5 - 7.5 35 M123 0.2 11 - 7.5 11.6 M123 30 3 10 - 13.6 1.2	OCR Scan	PDF	MS1403 MS1401 MS1504 MS1506 SD1012 SD1012-03 SD1143 SD1014-02 SD1272 SD1018 tic 136

175 MHZ FM Search Results

175 MHZ FM Result Highlights (5)

175 MHZ FM Datasheets Context Search

88-108

MRF151G

BLY92C

BLV11

BLY92C

ASI10589

Untitled

Untitled

MRF173

Untitled

MRF173

Untitled

Untitled

9552N

mrf247

Untitled

MRF221

MRF247

inductor vk200

BY1-1F

MRF247

RF MOSFETs

t 3866 power transistor

tic 136