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    Ningbo connfly electronic CO LTD DS1017-10MA8B

    Connector: IDC; plug; female; PIN: 10; IDC; for ribbon cable; 1mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DS1017-10MA8B 6,785 5
    • 1 -
    • 10 $0.344
    • 100 $0.189
    • 1000 $0.155
    • 10000 $0.155
    		Buy Now

    Ningbo connfly electronic CO LTD DS1017-10MA2B

    Connector: IDC; plug; female; PIN: 10; IDC; for ribbon cable; 1mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DS1017-10MA2B 6,271 3
    • 1 -
    • 10 $0.33
    • 100 $0.198
    • 1000 $0.177
    • 10000 $0.144
    		Buy Now

    1710MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRH3012T1R0NNV Features Item Summary 1.0 H(±30%), 2200mA, 1710mA Lifecycle Stage


    Original     		PDF NRH3012T1R0NNV 2200mA, 1710mA AEC-Q200 2000pcs 100kHz 2200mA

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series H type NRH3012T1R0NN Features Item Summary 1.0 H(±30%), 2200mA, 1710mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions


    Original     		PDF NRH3012T1R0NN 2200mA, 1710mA 2000pcs 100kHz 2200mA 111MHz

    D0-35

    Abstract: u327
    Text: Enhanced Memory Systems Inc. DM1M36SJ6/DM1M32SJ6 Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2242


    Original     		PDF DM1M36SJ6/DM1M32SJ6 1Mbx36/1Mbx32 DM1M36SJ 28-pin DM2242 DM2252 DM1M32SJ6 DM1M36SJ6 D0-35 u327

    gigabyte 945

    Abstract: gigabyte 945 circuit diagram U727 edram
    Text: Enhanced Memory Systems Inc. DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2202


    Original     		PDF DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM1M36SJ 28-pin DM2202 DM2212 DM1M32SJ DM1M36SJ1 gigabyte 945 gigabyte 945 circuit diagram U727 edram

    Untitled

    Abstract: No abstract text available
    Text: Lithium Ion UF484462ST Features & Benefits Specifications • High capacity model High charge voltage • High energy density and voltage • Long, stable power with a flat discharge voltage • Ideal for portable communications, portable computing, and robotics.


    Original     		PDF UF484462ST 1660mAh 1710mAh 1160mA,

    Untitled

    Abstract: No abstract text available
    Text: Valve Regulated Lead-Acid Rechargeable Battery BP18-12 The battery is constructed by plates, separators, safety valves and container. Since the electrolyte is held by a glassmat separator and plates, the battery can be used in any direction and position without leakage.


    Original     		PDF BP18-12 900mA 50volts) 1710mA

    D0-35

    Abstract: DM224
    Text: DM2M36SJ6/DM2M32SJ6 Multibank EDO 2Mbx36/2Mbx32 Enhanced DRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM2M36SJ6 achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on both sides of the multi-layer


    Original     		PDF DM2M36SJ6/DM2M32SJ6 2Mbx36/2Mbx32 DM2M36SJ6 28-pin DM2242 DM2252 DM2M32SJ6 16KByte DM2M36SJ D0-35 DM224

    CAL03

    Abstract: ramtron DM2202J
    Text: Enhanced Memory Systems Inc. DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28pin plastic SOJ packages, on both sides of the multi-layer


    Original     		PDF DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 DM2M36SJ 28pin DM2202 DM2212 DM2M32SJ DM2M36SJ CAL03 ramtron DM2202J

    Untitled

    Abstract: No abstract text available
    Text: Lithium Ion UF485155S Features & Benefits Specifications • High energy density and voltage • Long, stable power with a flat discharge voltage • Ideal for portable communications, portable computing, and robotics. Rated capacity 1 Min. 1660mAh Capacity(2)


    Original     		PDF UF485155S 1660mAh 1710mAh 1660mA,

    Untitled

    Abstract: No abstract text available
    Text: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		PDF DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM1M36SJ

    U716

    Abstract: U6915 1178Q
    Text: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page


    OCR Scan     		PDF DM2M36SJ DM2M32SJ 2Mbx36/2Mbx32 U716 U6915 1178Q

    2mb 72-pin simm

    Abstract: 10782
    Text: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM F ^ M T R O N Product Specification Features • 2Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		PDF DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM2212J-XX, 1M32SJ) DM1M36SJ 2mb 72-pin simm 10782

    Untitled

    Abstract: No abstract text available
    Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM r ^ M T R O N Product Specification Features Architecture • 4KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		PDF DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced M2M32SJ) DM2M36SJ

    U615

    Abstract: DM 0365 R pin EQUIVALENT U716 U1018
    Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM r ^ p M T R O N Features • 4Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		PDF DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM DM2212J-XX, OM2M32SJ) DM2M36SJ U615 DM 0365 R pin EQUIVALENT U716 U1018

    U312

    Abstract: No abstract text available
    Text: Enhanced DM2M3SSJ6m 2M32SJ6MuWankBX 2Mbx3V2Mbx32EnhancedDRAMSIMM Product Specification Features • 16KByte SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache) ■ Fast DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes


    OCR Scan     		PDF

    vh41

    Abstract: u327
    Text: DM 1M36SJ & DM 1M32SJ 1Mbx 36/1Mbx 32EnhancedDRAMSIMM A / r ^ M I R O N Features Preliminary Datasheet Architecture m Compatibility with JEDEC • ■ ■ ■ ■ ■ 1M x 36 DRAM SIMM Configuration Allows Performance Upgrades in System Integrated 512 \ 36 SRAM Cache Row Register Allows 15ns


    OCR Scan     		PDF DM1M36SJ DM1M32SJ 36/1Mbx 32EnhancedDRAMSIMM 58-Gbyte/sec 1M36SJ 28-Part vh41 u327

    write-verify

    Abstract: u327
    Text: ^ M DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM T T R O IN J •eatures Architecture The DM1M3 >S| achieves I Mb \ ,i(> density b\ mounting nine 1M 1 2kliyte SRAM Cache Memon lor 1ms Random Reads W illiin a Page \ I ICDRAMs, packaged in 2N-pin plastic SOJ packages, on a multi­


    OCR Scan     		PDF DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM2202 DM2212 IM32SJ write-verify u327

    Nippon capacitors

    Abstract: 24C02N
    Text: HB56U W1672EJN Series, HB56UW1664EJN Series 16777216-word x 72-bit High Density Dynamic RAM Module 16777216-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-643A Z Rev. 1.0 Jun. 9, 1997 Description The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory


    OCR Scan     		PDF HB56U W1672EJN HB56UW1664EJN 16777216-word 72-bit 64-bit ADE-203-643A HB56UW1672EJN Nippon capacitors 24C02N

    MAU250

    Abstract: u225 MAU2
    Text: •I H Enhanced Memory Systems Inc. Features T0 Q7 SH 7 GODÜOTO bTfi ■ DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32EnhancedDRAMSIMM Product Specification Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a


    OCR Scan     		PDF DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32EnhancedDRAMSIMM DM1M36SJ TD07S47 0001CH MAU250 u225 MAU2

    1850R

    Abstract: dh 1117 U514 0QQ011
    Text: • H Enhanced Memory Systems Inc. Features ciD07S47 DDDG11G 21b DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM Product Specification Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on both sides


    OCR Scan     		PDF iD07S47 DDDG11G DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DM2202J-XX, DM2212J-XX, DM2M32SJ) DM2M36SJ 1850R dh 1117 U514 0QQ011

    Untitled

    Abstract: No abstract text available
    Text: Enhanced IV f e m o iy S y s t e m s DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM In c . Product Specification Features A rchitecture The DM2M36SJ • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns A sess to Any New Page


    OCR Scan     		PDF DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 DM2M36SJ

    DM 0365 R pin EQUIVALENT

    Abstract: No abstract text available
    Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM ^ I M T R O I M Features Architecture rile DM2M iliSJ achieves 2Mb x 36 density by mounting 18 1M x i I.DRAVls, packaged in 28-pin plastic SOJ packages, on both sides of the multi-layer substrate. Sixteen


    OCR Scan     		PDF DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 28-pin DM2202 DM2212 DM2M32SJ DM2202 DM2212J-XX, DM2M32SJ) C1-C18 DM 0365 R pin EQUIVALENT