ba37 diode
Abstract: K8D1716U K8D1716UBB K8D1716UTB BGA11 samsung nor flash
Text: K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft 1 Draft Date Remark July 25, 2004 Advance Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY
|
Original
|
PDF
|
K8D1716UTB
K8D1716UBB
48-PIN
1220F
047MAX
ba37 diode
K8D1716U
K8D1716UBB
BGA11
samsung nor flash
|
Untitled
Abstract: No abstract text available
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft 1 Draft Date Remark July 25, 2004 Advance Revision 0.0 August 2004 K8D1716UTC / K8D1716UBC FLASH MEMORY
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48-PIN
1220F
047MAX
|
Untitled
Abstract: No abstract text available
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Draft Date Remark Initial Draft July 25, 2004 Advance Support 48TSOP1 Lead Free Package September 16, 2004 1 Revision 0.1
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48-PIN
1220F
047MAX
|
ba37
Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
ba37
K8D1716U
K8D1716UBC
samsung nor flash
BA251
|
Untitled
Abstract: No abstract text available
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
|
BA37
Abstract: ba37 diode K8D1716UBC 48FBGA K8D1716U K8D1716UTC samsung nor flash BA2411 150us
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
BA37
ba37 diode
K8D1716UBC
K8D1716U
samsung nor flash
BA2411
150us
|
Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
|
Original
|
PDF
|
MX29F1615
16M-BIT
90/100/120ns
P14-17
MAY/05/1999
OCT/01/1999
NOV/03/1999
|
29f1615
Abstract: MX29f1615
Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
|
Original
|
PDF
|
MX29F1615
16M-BIT
90/100/120ns
PM0615
JUN/15/2001
29f1615
MX29f1615
|
29f1615
Abstract: MX29f1615 29f1615-10
Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
|
Original
|
PDF
|
MX29F1615
16M-BIT
90/100/120ns
JUN/15/2001
NOV/21/2002
29f1615
MX29f1615
29f1615-10
|
29F1615
Abstract: mx29f1615
Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles
|
Original
|
PDF
|
MX29F1615
16M-BIT
90/100/120ns
compatibl23
42-PIN
PM0615
29F1615
mx29f1615
|
MX29F1610B
Abstract: MX29F1610A
Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
|
Original
|
PDF
|
MX29F1610A/B
16M-BIT
90/100/120ns
May/13/1998
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
MX29F1610B
MX29F1610A
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
|
Original
|
PDF
|
MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
|
MX29F1610B
Abstract: No abstract text available
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
|
Original
|
PDF
|
MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
JUN/15/2001
NOV/21/2002
MX29F1610B
|
MX29F1610B
Abstract: MX29F1610A
Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns
|
Original
|
PDF
|
MX29F1610A
16M-BIT
90/100/120ns
Nov/10/1998
MAR/31/1999
MAY/18/1999
JUN/20/2000
NOV/16/2000
JUN/15/2001
MX29F1610B
MX29F1610A
|
|
|
29f1615
Abstract: No abstract text available
Text: MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns
|
Original
|
PDF
|
MX29F1615
16M-BIT
90/100/120ns
JUN/15/2001
NOV/21/2002
JAN/27/2004
PM0615
29f1615
|
MX29F1610
Abstract: MX29F1610B MX29F1610A A14A
Text: INDEX PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns
|
Original
|
PDF
|
MX29F1610A/B
16M-BIT
70/90/120ns
MX29F1610
MX29F1610B
MX29F1610A
A14A
|
56-PIN
Abstract: LH28F016LL LH28F016SU camera with iCCD matrix BSR10
Text: LH28F016LL FEATURES • User-Configurable x8 or x16 Operation • 3 V Write/Erase Operation 3 V VPP – 2.7 - 3.6 V Write-Erase Operation • 120 ns Maximum Access Time (VCC = 3.0 V) • 150 ns Maximum Access Time (VCC = 2.7 V) • • • • 16M (1M x 16, 2M × 8) Flash Memory
|
Original
|
PDF
|
LH28F016LL
56-PIN
J63428
SMT96120
LH28F016LL
LH28F016SU
camera with iCCD matrix
BSR10
|
23C16005
Abstract: No abstract text available
Text: KM23C16005A G CMOS MASK ROM 16M-Bit (2M x8/1M x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 120ns (max.) Page access: 50 ns (max.) • Supply voltage: single + 5V
|
OCR Scan
|
PDF
|
KM23C16005A
16M-Bit
120ns
100mA
42-pin,
44-pin,
KM23C16005A)
KM23C16005AG)
23C16005
|
BA28
Abstract: BA-28 BA34 BA32 KM28U160-T
Text: Advance Information FLASH MEMORY KM28U160-T/B 16M Bit 2M X8/1M x16 N O R Flash Memory FE A T U R ES G E N E R A L DESC R IPTIO N • Single Voltage, 2,7 to 3.6 V for Read and VWte operations • Organization 2,097,152 x 8 bit (Byte mode) 1 1,048,576 x 16 bit (Word mode)
|
OCR Scan
|
PDF
|
KM28U160-T/B
160-B
DQ15/A-1
BA28
BA-28
BA34
BA32
KM28U160-T
|
Untitled
Abstract: No abstract text available
Text: SA MS UNG E L E C T R O N I C S INC 42E D Bi 0011103 1 BSflGK PRELIMINARY KM23C16000FP CMOS MASK ROM 16M-Bit 2M X8/1M X16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)
|
OCR Scan
|
PDF
|
KM23C16000FP
16M-Bit
150ns
64-pln
KM23C16000FP
KM23C16000FP)
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C16100 CMOS MASK ROM 16M-Bit 2M x8/1M x16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le organization T h e KM 23C 16100 is a fu lly s ta tic m a s k p ro g ra m m a b le 2 ,097,152 x 8 (byte m ode) ROM 1,040,576 x 16 (word m ode)
|
OCR Scan
|
PDF
|
KM23C16100
16M-Bit
150ns
42-pin,
44-pin,
KM23C16100)
KM23C16100G)
|
LA 8512
Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER
|
OCR Scan
|
PDF
|
100ns
16Bit
32Blt
18Bit
36Bit
200ns
250ns
LA 8512
samsung dram
1M - FLASH PCMCIA linear card
samsung memory
rom 1K x8
SRAM 1m X 8 dip
1M - PCMCIA linear card
SAMSUNG 256K x 16bit DRAM
30 pin SIP dram memory
TSOP 44 Package nand memory
|
M8512
Abstract: samsung dram AM8512 TSOP 56 Package nand memory
Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER
|
OCR Scan
|
PDF
|
100ns
150ns
16Bit
18Bit
M8512
samsung dram
AM8512
TSOP 56 Package nand memory
|
Untitled
Abstract: No abstract text available
Text: LG Semicon PRODUCT IMPEX • 4M DRAM GM71C4100C 4M x 1 Bit, 5V, 1KRef„ FPM - 25 GM71C4100E 4M x 1 Bit, 5V, 1KRef„ FPM - 34 GM71C4400C 1M x4B it, 5V, 1KRef., FPM - 44
|
OCR Scan
|
PDF
|
GM71C4100C
GM71C4100E
GM71C4400C
GM71C4403C
GM71C4400E
GM71C4403E
GM71C4800C
GM71C4260C
GM71C4263C
512Kx8Bit,
|
