K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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16M NtRAM samsung
Abstract: 9p marking
Text: K7N643645M K7N641845M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAMTM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz
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K7N643645M
K7N641845M
2Mx36
4Mx18-Bit
4Mx18
200MHz)
K7N6436
SG200602847
16M NtRAM samsung
9p marking
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8160Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 16Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT No Bus Turn Around functionality allows zero wait
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GS8160Z18/36T-250/225/200/166/150/133
100-Pin
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Untitled
Abstract: No abstract text available
Text: Preliminary GS880Z18/36T-166/150/133/100 100 Pin TQFP Commercial Temp Industrial Temp 166-100 Mhz 8Mb Pipelined and Flow Through 3.3V VDD 2.5V & 3.3V VDDQ Synchronous NBT SRAMs Features Functional Description • 512kx18 and 256kx36 Configurations. • User configurable Pipelined and Flow through mode.
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GS880Z18/36T-166/150/133/100
512kx18
256kx36
GS880Z18/36T
9/1999K
1/2000L
1/2000K
5/2000M
GS880Z18/36TRev1
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GS840Z18AT
Abstract: No abstract text available
Text: Preliminary GS840Z18/36AT-180/166/150/100 100-Pin TQFP Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 180 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations
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GS840Z18/36AT-180/166/150/100
100-Pin
840Z18A
GS840Z18AT
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GS840Z36AT-100
Abstract: GS840Z18AT
Text: Preliminary GS840Z18/36AT-200/180/166/150/100 100-Pin TQFP Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 200 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations
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GS840Z18/36AT-200/180/166/150/100
100-Pin
840Z18A
GS840Z36AT-100
GS840Z18AT
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GS8160Z18T
Abstract: GS8160Z18T-225 GS8160Z36T
Text: Preliminary GS8160Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow through 225 MHz–133 2.5 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode
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GS8160Z18/36T-225/200/180/166/150/133
100-Pin
8160Z18
815xxx
GS8160Z18T
GS8160Z18T-225
GS8160Z36T
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16M NtRAM samsung
Abstract: 36T22
Text: Preliminary GS8150Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode
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GS8150Z18/36T-225/200/180/166/150/133
100-Pin
8150Z18
16M NtRAM samsung
36T22
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8160Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow through 225 MHz–133 2.5 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode
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GS8160Z18/36T-225/200/180/166/150/133
100-Pin
160Z18/36T2
2/2000E;
8160Z18
815xxx
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|
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8161Z18/36T-200/180/166/150/133 100 Pin TQFP Commercial Temp Industrial Temp 16Mb Pipelined and Flow through Synchronous NBT SRAM Features • User configurable Pipelined and Flow through mode. • NBT No Bus Turn Around functionality allows zero wait ReadWrite-Read bus utilization. Fully pin compatible with both pipelined
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GS8161Z18/36T-200/180/166/150/133
8160Z
8161Z.
GS8161Z18/36T2
2000DGS8161Z18/36T2
2000E
2/2000E;
8161Z18
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qe-2000
Abstract: 328A15
Text: Preliminary GS8151Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode
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GS8151Z18/36T-225/200/180/166/150/133
100-Pin
8151Z18
qe-2000
328A15
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36T22
Abstract: GS8160Z18T GS8160Z18T-225 GS8160Z36T
Text: Preliminary GS8160Z18/36T-225/200/180/166/150/133 16Mb Pipelined and Flow Through Synchronous NBT SRAM 100-Pin TQFP Commercial Temp Industrial Temp 225 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT No Bus Turn Around functionality allows zero wait
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GS8160Z18/36T-225/200/180/166/150/133
100-Pin
8160Z18
36T22
GS8160Z18T
GS8160Z18T-225
GS8160Z36T
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36AB-180
Abstract: GS842Z18AB-180I GS842Z18A GS842Z36A
Text: Preliminary GS842Z18/36AB-180/166/150/100 119-Bump BGA Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 180 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations
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GS842Z18/36AB-180/166/150/100
119-Bump
842Z18A
36AB-180
GS842Z18AB-180I
GS842Z18A
GS842Z36A
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GS842Z18A
Abstract: GS842Z36A
Text: Preliminary GS842Z18/36AB-200/180/166/150/100 119-Bump BGA Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 200 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations
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GS842Z18/36AB-200/180/166/150/100
119-Bump
842Z18A
GS842Z18A
GS842Z36A
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8161Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 16Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • User-configurable Pipeline and Flow Through mode
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GS8161Z18/36T-250/225/200/166/150/133
100-Pin
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th50vpf
Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. TC59LM806CFT-50 TC59LM806CFT-55
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TC59LM806CFT-50
TC59LM806CFT-55
TC59LM806CFT-60
TC59LM814CFT-50
TC59LM814CFT-55
TC59LM814CFT-60
TC59LM818DMB-30
TC59LM818DMB-33
TC59LM818DMB-40
64M/32M
th50vpf
TH50VPF5783
TC55VEM208ASTN55
th58nvg
TC554161AFT-70L
TC554161AFT-70
TC55V8512JI-12
TC55VD1636FFI-150
tc58128aft
TC58NVG0S3AFT00
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8151Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode
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GS8151Z18/36T-225/200/180/166/150/133
100-Pin
8151Z18
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Untitled
Abstract: No abstract text available
Text: Preliminary GS881Z18/36T-11/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp MHz 8Mb Pipelined and Flow Through 100 MHz–66 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 512K x 18 and 256K x 36 configurations
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GS881Z18/36T-11/100/80/66
100-Pin
GS881Z18/36T
9/1999K/
9/1999K
1/2000L
GS881Z18/36TRev1
881Z18
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GS882Z36b
Abstract: a1-66c
Text: Preliminary GS882Z18/36B-11/100/80/66 119-Bump BGA Commercial Temp Industrial Temp MHz 8Mb Pipelined and Flow Through 100 MHz–66 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 512K x 18 and 256K x 36 configurations
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GS882Z18/36B-11/100/80/66
119-Bump
x16/x32
882Z18
GS882Z36b
a1-66c
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