54-TSOP
Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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256MB,
512MB,
168pin
512Mb
62/72-bit
54-TSOP
K4S511632B
M366S2953BTS-C7A
M366S3354BTS-C7A
M366S6553BTS-C7A
M374S2953BTS-C7A
M374S6553BTS-C7A
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M366S0924ETS-C7A
Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002
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128MB,
256MB
168pin
128Mb
62/72-bit
M366S0924ETS-C7A
M366S1723ETS-C7A
M366S1723ETU-C7A
M366S3323ETS-C7A
M366S3323ETU-C7A
M374S1723ETS-C7A
M374S1723ETU-C7A
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Untitled
Abstract: No abstract text available
Text: 168Pin PC133 Unbuffered DIMM 128MB with 16Mx8 CL3 TS16MLS64V6D Description Placement The TS16MLS64V6D is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS16MLS64V6D consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and
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168Pin
PC133
128MB
16Mx8
TS16MLS64V6D
TS16MLS64V6D
PC-133.
400mil
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Untitled
Abstract: No abstract text available
Text: 168PIN PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6W Description Placement The TS8MLS64V6W is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6W consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and
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168PIN
PC133
TS8MLS64V6W
TS8MLS64V6W
PC-133.
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 32MB 168PIN PC66 SDRAM DIMM With 2M X 8 3.3VOLT TS4MLS64V1P2N Description Placement The TS4MLS64V1P2N is a 4M bit x 64 Synchronous Dynamic RAM, high density for PC-66. The TS4MLS64V1P2N consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a
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168PIN
TS4MLS64V1P2N
TS4MLS64V1P2N
PC-66.
16pcs
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 168Pin PC133 Unbuffered DIMM 64MB With 8Mx8 CL3 TS8MLS64V6L Description Placement The TS8MLS64V6L is an 8M bit x 64 Synchronous Dynamic RAM high-density for PC-133. The TS8MLS64V6L consists of 8pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and
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168Pin
PC133
TS8MLS64V6L
TS8MLS64V6L
PC-133.
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 168PIN PC66 Unbuffered DIMM 128MB with 8Mx8 CL3 TS16MLS64V1WN Description Placement The TS16MLS64V1WN is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS16MLS64V1WN consists of 16pcs CMOS 8Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and
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168PIN
128MB
TS16MLS64V1WN
TS16MLS64V1WN
PC-66.
16pcs
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 168PIN PC100 Unbuffered DIMM 32MB With 4M X16 CL3 TS4MLS64V8Z Description Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high-density for PC-100.The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and
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168PIN
PC100
TS4MLS64V8Z
TS4MLS64V8Z
PC-100
4Mx16
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Dimensions Description The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits
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128MB
168PIN
PC100
TS16MLS64V8C2
TS16MLS64V8C2
PC-100
8Mx16
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 128MB 168PIN PC100 CL2 SDRAM DIMM With 16M X 8 3.3VOLT TS16MLS64V8D2 Description Placement The TS16MLS64V8D2 is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS16MLS64V8D2 consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a
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128MB
168PIN
PC100
TS16MLS64V8D2
TS16MLS64V8D2
PC-100.
16Mx8
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 168PIN PC100 Registered DIMM 512MB With 32M X 8 CL2 TS64MLR72V8F2 Placement Description The TS64MLR72V8F2 is a 64M bit x 72 Synchronous Dynamic RAM high-density memory registered DIMM module. The TS64MLR72V8F2 consists of 18pcs of CMOS 32Mx8bits Synchronous DRAMs in TSOP-II
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168PIN
PC100
512MB
TS64MLR72V8F2
TS64MLR72V8F2
18pcs
32Mx8bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 168PIN PC133 Unbuffered DIMM 256MB With 16Mx8 CL3 TS32MLS72V6D Description Placement The TS32MLS72V6D is a 32M x 72bits Synchronous Dynamic RAM high-density for PC-133. The TS32MLS72V6D consists of 18pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a
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168PIN
PC133
256MB
16Mx8
TS32MLS72V6D
TS32MLS72V6D
72bits
PC-133.
18pcs
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HYM71V8635ALT6-H
Abstract: HYM71V8635ALT6-K HYM71V8635AT6 HYM71V8635AT6-H HYM71V8635AT6-K
Text: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635AT6 Series DESCRIPTION The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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8Mx64
PC133
8Mx16
HYM71V8635AT6
8Mx64bits
8Mx16bits
400mil
54pin
168pin
HYM71V8635ALT6-H
HYM71V8635ALT6-K
HYM71V8635AT6-H
HYM71V8635AT6-K
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HYM71V32755ALT8M-8
Abstract: HYM71V32755ALT8M-P HYM71V32755ALT8M-S HYM71V32755AT8M HYM71V32755AT8M-8 HYM71V32755AT8M-P HYM71V32755AT8M-S
Text: 32Mx72 bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32755AT8M Series DESCRIPTION The Hynix HYM71V32755AT8M Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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32Mx72
PC100
16Mx8
HYM71V32755AT8M
32Mx72bits
16Mx8bits
400mil
54pin
168pin
HYM71V32755ALT8M-8
HYM71V32755ALT8M-P
HYM71V32755ALT8M-S
HYM71V32755AT8M-8
HYM71V32755AT8M-P
HYM71V32755AT8M-S
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HYM76V4M655HGLT6-8
Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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PC100
4Mx16
HYM76V4M655HG
4Mx64bits
4Mx16bits
400mil
54pin
168pin
HYM76V4M655HGLT6-8
HYM76V4M655HGLT6-P
HYM76V4M655HGLT6-S
HYM76V4M655HGT6-P
HYM76V4M655HGT6-S
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Untitled
Abstract: No abstract text available
Text: UG516V7288HSG Revision History Apr 06 , 2000 Rev - A Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788 [email protected] Re-Tek- 068_M UG516V7288HSG 128M Bytes (16M x 72) DRAM 168Pin DIMM With ECC based on 8M x 8
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UG516V7288HSG
168Pin
UG516V7288HSG
400mil
240mil
168-pin
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Untitled
Abstract: No abstract text available
Text: UG516W664 8 4HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 16M x 4 General Description Features The UG516W664(8)4HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W664(8)4HK(S)G is assembled using 16 pcs of 16Mx4 4K/8K refresh DRAMs in a 32 pin 400
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UG516W664
168Pin
16Mx4
350Max
89Max)
150Max
81Max)
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Untitled
Abstract: No abstract text available
Text: UG54W742 4 4GJ(T)G 32M Bytes (4M x 72) DRAM 168Pin DIMM With ECC based on 4M x 4 General Description Features The UG54W742(4)4GJ(T)G is a 4,194,304 bits by 72 EDO DRAM module. The UG54W742(4)4GJ(T)G is assembled using 18 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in
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UG54W742
168Pin
300mil
168-pin
100Max
54Max
540Min)
100Min
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Untitled
Abstract: No abstract text available
Text: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in
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UG54W662
168Pin
300mil
168-pin
350Max
89Max
540Min)
100Min
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Untitled
Abstract: No abstract text available
Text: UG58E644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58E644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58E644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ
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UG58E644
168Pin
400mil
ABT16244
240mil
168-pin
1000mil
190Max
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Untitled
Abstract: No abstract text available
Text: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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64-Bit
72-Bit
168pin
HYM64V1605GU-50/-60
HYM64V1645GU-50/-60
HYM72V1605GU-50/-60
HYM72V1645GU-50/-60
V1605/45GU-50/-60
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TME 87 0D
Abstract: No abstract text available
Text: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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OCR Scan
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PDF
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64-Bit
72-Bit
168pin
HYM64V8005GU-50/-60
HYM64V8045GU-50/-60
HYM72V8005GU-50/-60
HYM72V8045GU-50/-60
DM168-13
TME 87 0D
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 8M x 64-Bit EOO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72 V8045G U-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •
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OCR Scan
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PDF
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64-Bit
72-Bit
168pin
HYM64V8005GU-50/-60/-70
HYM64V8045GU-50/-60/-70
HYM72V8005GU-50/-60/-70
HYM72
V8045G
U-50/-60/-70
V8005/45GU-50/-60/-70
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smd JSs 13
Abstract: smd JSs smd JSs 99 VT244A smd JSs 75 DQ2Q-DQ23 3E2 material specification
Text: SIEM EN S 16M x 72-Bit Dynamic RAM EDO- Module E C C - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Inform ation • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 1 bank 16 M x 72 organisation
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72-Bit
72V1605GS-50/-60
72V1615GS-50/-60
168pin
S235b05
023SbDS
fl235b05
smd JSs 13
smd JSs
smd JSs 99
VT244A
smd JSs 75
DQ2Q-DQ23
3E2 material specification
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