Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1633 MOSFET Search Results

    1633 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1633 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSH70N10A

    Abstract: MJ70a
    Text: SSH70N10A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.023 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V


    Original     		PDF SSH70N10A SSH70N10A MJ70a

    Untitled

    Abstract: No abstract text available
    Text: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT13N50/AOTF13N50 AOT13N50 AOTF13N50 AOT13N50L AOTF13N50L O-220 O-220F AOTF13N50

    Untitled

    Abstract: No abstract text available
    Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N50/AOB12N50/AOTF12N50 AOT12N50 AOB12N50 AOTF12N50 AOT12N50L AOTF12N50L AOB12N50L O-220 O-263 O-220F

    500V12A

    Abstract: No abstract text available
    Text: AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing


    Original     		PDF AOW12N50/AOWF12N50 AOW12N50 AOWF12N50 O-262 O-262F 500V12A

    Untitled

    Abstract: No abstract text available
    Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N50/AOB12N50/AOTF12N50 AOT12N50 AOB12N50 AOTF12N50 AOT12N50L AOTF12N50L AOB12N50L O-220 O-263 O-220F

    AOTF12N50L

    Abstract: AOTF12N50 AOT12N50
    Text: AOT12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N50/AOTF12N50 AOT12N50 AOTF12N50 AOT12N50L AOTF12N50L O-220 O-220F AOTF12N50L AOT12N50

    Untitled

    Abstract: No abstract text available
    Text: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT13N50/AOTF13N50 AOT13N50 AOTF13N50 AOT13N50L AOTF13N50L O-220 O-220F

    aotf12n50

    Abstract: No abstract text available
    Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N50/AOB12N50/AOTF12N50 AOT12N50 AOB12N50 AOTF12N50 AOT12N50L AOTF12N50L AOB12N50L O-220 O-220F O-263

    AOT13N50

    Abstract: AOTF13N50
    Text: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT13N50/AOTF13N50 AOT13N50 AOTF13N50 O-220 O-220F AOT13N50

    AOTF12N50

    Abstract: AOT12N50 AOTF10N60
    Text: AOT12N50 / AOTF12N50 500V, 12A N-Channel MOSFET General Description Features The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N50 AOTF12N50 AOT12N50 AOTF12N50 O-220 O-220F AOTF10N60

    AOTF12N50

    Abstract: AOT12N50
    Text: AOT12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N50/AOTF12N50 AOT12N50 AOTF12N50 O-220 O-220F AOT12N50

    AOTF12N50L

    Abstract: AOB12N50L AOT12N50L
    Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N50/AOB12N50/AOTF12N50 AOT12N50 AOB12N50 AOTF12N50 AOT12N50L AOTF12N50L AOB12N50L O-220 O-220F O-263 AOTF12N50L AOB12N50L AOT12N50L

    Untitled

    Abstract: No abstract text available
    Text: AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing


    Original     		PDF AOW12N50/AOWF12N50 AOW12N50 AOWF12N50 O-262 O-262F

    Untitled

    Abstract: No abstract text available
    Text: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT13N50/AOTF13N50 AOT13N50 AOTF13N50 AOT13N50L AOTF13N50L AOTF13N50

    Untitled

    Abstract: No abstract text available
    Text: SSH70N10A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.023 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V


    Original     		PDF SSH70N10A

    907 TRANSISTOR smd

    Abstract: F75299 10d471 SC053
    Text: ACT520 QC 1.5A Application Report High Performance QR Mode 18W Quick Changer Using ACT520 FEATURES • •      Quasi-Resonant PWM Controller Accurate CC with line and inductance compensation No-load Standby Power < 30mW Excellent Efficiency >80% with Low Cost 4N65 MOSFET


    Original     		PDF ACT520 ACT520 230VAC, Load50 907 TRANSISTOR smd F75299 10d471 SC053

    Untitled

    Abstract: No abstract text available
    Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling


    Original     		PDF DMP3035SFG AEC-Q101 DS35440

    Untitled

    Abstract: No abstract text available
    Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits V BR DSS • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling


    Original     		PDF DMP3035SFG AEC-Q101 DS35440

    Untitled

    Abstract: No abstract text available
    Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling


    Original     		PDF DMP3035SFG AEC-Q101 DS35440

    "rca application note"

    Abstract: 36254 RFH30N12 RFH30N15
    Text: Standard Power MOSFETs RFH30N12, RFH30N15 File N u m be r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 30 A, 120 V - 150 V festoni = 0.075 Q Features: • ■ ■ ■ ■ ■ SOA is power-dissipation lim ited


    OCR Scan     		PDF RFH30N12, RFH30N15 92CS-3374I RFH30N12 RFH30N15* h2CS-36252 AN-7254 AN-7260. 9SCS-36254 92CS-3625J "rca application note" 36254 RFH30N15

    RFK30N12

    Abstract: C039 18198 RFH30N12 RFH30N15 Scans-00121260
    Text: 3 8 7 5 0 8 T gT E ~ S O L Í D Standard Power MOSFETs 3 ñ 7 5 D ñ i DI G E S O LI » STATE STATE 0 1E o a i a n 3 18193 a D iT - ^ - '/S ’ _ RFH30N12, RFH30N15 File N u m b e r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF RFH30N12, RFH30N15 9ZCS-53741 RFH30N12 RFH30N15* JCS-176S7 RFK30N12, RFK30N15 92CS-36Z32 92CS-362S3 RFK30N12 C039 18198 RFH30N15 Scans-00121260

    ssh70n10a

    Abstract: No abstract text available
    Text: SSH70N10A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gale Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ ■ BVdss * 100 V ^DS on “


    OCR Scan     		PDF SSH70N10A ssh70n10a

    A2757

    Abstract: pj 66 diode SSH70N10A 1633 MOSFET
    Text: A d van ced Power MOSFET S S H 7 0 N 1 0 A FEATURES = 100 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 70 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature


    OCR Scan     		PDF SSH70N10A 0QMD315 O-220-F-4L DD3b33E 003b333 A2757 pj 66 diode SSH70N10A 1633 MOSFET

    SSH70N10A

    Abstract: No abstract text available
    Text: Advanced SSH70N10A P o w e r MOSFET FEATURES bv • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea RDS on = 0.023 a lD = 70 A


    OCR Scan     		PDF SSH70N10A SSH70N10A