MSMS416273
Abstract: No abstract text available
Text: O K I Semiconductor MSMS416273 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSMS416273
144-Word
16-Bit
MSM5416273
512-word
MSMS416273
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KM4216C256
Abstract: KM4216V256 SQ15
Text: KM4216C/V256 CMOS VIDEO RAM 2 5 6 K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. ,u Dual port Architecture 256K x 16 bits RAM port 512 x 16 bits SAM port The RAM port has a write per bit mask capability.
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KM4216C/V256
256Kx
110ns
130ns
150ns
KM4216C256
120mA
110mA
100mA
KM4216V256
SQ15
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Untitled
Abstract: No abstract text available
Text: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers C165 Preliminary C165 16-Bit Microcontroller • • • • • • • • • • • • • • • High Perform ance 16-bit CPU with 4-Stage Pipeline 100 ns Instruction Cycle Time at 20-M Hz CPU Clock
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C16x-Family
16-Bit
fl235b05
00bl577
00bl57A
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Untitled
Abstract: No abstract text available
Text: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation
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16-Bit
514171BJ-60/-70
16-Bit
514171BJL-60/-70
23SbOS
00713S?
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PDF
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Untitled
Abstract: No abstract text available
Text: REV22 MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169TP is a 16M -bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynam ic m em ory array and a
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REV22)
M5M4V16169TP-10
1024K
16-BIT)
024-W
4V16169TP
576-word
16-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166/83C166 • • • • • • • • • • • • • • • • • • • • • • • • • • SAB 80C166/83C166 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline
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C16x-Family
16-Bit
80C166/83C166
83C166
P-MQFP-100-2
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PDF
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3217b
Abstract: NEC 4216160 4216160 IC-3217B 4218160
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
/iPD42S16160,
42S18160,
PD42S16160,
42S18160
50-pin
3217b
NEC 4216160
4216160
IC-3217B
4218160
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256x16* STATIC RAM
Abstract: msm5416262 MSM5416282
Text: O K I Semiconductor MSM5416282 262,144-Word x 16-Bit M ultiport DRAM D E S C R IP T IO N The MSM5416282 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
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MSM5416282
144-Word
16-Bit
MSM5416282
512-word
SSOP60-P-700-0
256x16* STATIC RAM
msm5416262
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PDF
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D42S18165
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P D 42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S18165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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OCR Scan
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16-BIT,
uPD42S18165
uPD4218165
/jPD42S18165
/iPD42S18165,
50-pin
42-pin
016lg
PD42S18165,
D42S18165
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PDF
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Untitled
Abstract: No abstract text available
Text: November 1993 Edition 2.0 FUJITSU DATA SHEET M B 8 14260-60/-70/-80 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 16-bit increments. The MB814260 features a "fast page’ mode of
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MB814260
16-bit
512x16-bits
MB814260-60/-70/-80
FPT-44P-M07)
F44016S-1C
MB814260-60
MB814260-70
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M37734M8BXXXFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION •In te rru p ts . 19 types, 7 levels The M37734M8BXXXFP is a single-chip microcomputer using the •Multiple-function 16-bit tim e r. 5 + 3
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M37734M8BXXXFP
16-BIT
M37734M8BXXXFP
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PDF
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FFF84
Abstract: No abstract text available
Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.
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TMP95CS54
16-Bit
TMP95CS54F
TMP95CS54
100-pin
900/H
TLCS-90/900
FFF84
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PDF
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2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.
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TMP95CS54
16-Bit
TMP95CS54F
TMP95CS54
100-pin
900/H
TLCS-90/900
2216H
XZ MC11
LQFP100-P-1414-0
TMP95CS54F
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PDF
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4218160LE-60
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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OCR Scan
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42S18160,
16-BIT,
uPD42S18160
PD42S18160
50-pin
42-pin
4218160LE-60
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PDF
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KM29N32000T
Abstract: km29n32000
Text: FLASH MEMORY KM29N32000T/R 4 M x 8 Bit N A N D Flash M em ory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x Sbit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29N32000T/R
250us
KM29N32000T
km29n32000
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PDF
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hilti te 24
Abstract: hilti te 17 GO 440 104 esm 433 rac
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 42S18165L , 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The .¿/PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EOO
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OCR Scan
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42S18165L
16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L,
4218165L
50-pin
42-pin
1R35-207-3
hilti te 24
hilti te 17
GO 440
104 esm 433 rac
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP93CS44/TMP93CS45 Low Voltage / Low Power CMOS 16-bit MICROCONTROLLERS TMP93CS44F / TMP93CS45F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CS44 / TMP93CS45 are high-speed, advanced 16-bit m icrocontrollers developed for controlling m edium to large-scale equipm ent. The TMP93CS45 does not
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OCR Scan
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TMP93CS44/TMP93CS45
16-bit
TMP93CS44F
TMP93CS45F
TMP93CS44
TMP93CS45
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PDF
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TS PQ4 24
Abstract: TS PQ4 12
Text: TOSHIBA TLCS-900 Series TMP96PM40F CMOS 16-bit Microcontrollers TMP96PM40F 1. Outline and Device Characteristics The TMP96PM40F are high-speed advanced 16-bit micro controllers developed for controlling medium to large-scale equipment. The TMP96C141AF does not have a ROM, the
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OCR Scan
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TLCS-900
16-bit
TMP96PM40F
TC571000
TMP96CM40F
TMP96CM40F
80-pin
TMP96PM40F
TS PQ4 24
TS PQ4 12
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PDF
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MB81
Abstract: MB81F161622B-10 MB81F161622B-102 MB81F161622B-75
Text: MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-10 CM OS 2 Banks of 524,288 x 16 Bit Synchronous Dynamic Random Access M em ory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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MB81F161622B
16-bit
MB81F161622B-75/-102/-10
50-pin
FPT-50P-M05)
F50005S-2C-1
MB81
MB81F161622B-10
MB81F161622B-102
MB81F161622B-75
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PDF
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Untitled
Abstract: No abstract text available
Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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OCR Scan
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256Kx16
KM416V256DJ
0G322tM
QG322bS
7Tb4142
00322bfci
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-10 CM OS 2 Banks of 524,288 x 16 Bit Synchronous Dynamic Random Access M em ory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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OCR Scan
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MB81F161622B-75/-102/-10
MB81F161622B
16-bit
50-pin
FPT-50P-M05)
F50005S-2C-1
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PDF
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Untitled
Abstract: No abstract text available
Text: M ITSU BISHI LSIs M 5 M 4 1 6 1 6 5 C J ,T P - 5 ,- 6 ,- 7 , -5S,-6S,-7S P E E U ' HYPER PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal
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OCR Scan
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16777216-BIT
1048576-WQRD
16-BIT)
1048576-word
16-bit
DQ31048576-WORD
DQ9-DQ16)
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PDF
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D482445LGW-A70
Abstract: cwi 1011
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D escrip tio n The /iPD482444 and ^PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock
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OCR Scan
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PD482444,
256K-WORD
16-BIT
/iPD482444
PD482445
iPD482445
008t8oo2
020tg
bM27525
00b3flD
D482445LGW-A70
cwi 1011
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PDF
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0xc034
Abstract: 0X00002 0x8034 GPI004
Text: K S32C 6100 16/32-BIT RISC MICROCONTROLLER TECHNICAL SUMMARY Version 0.1 ELECTRONICS KS32C6100 RISC MICROCONTROLLER TECHNICAL SUMMARY OVERVIEW Samsung’s KS32C6100 16/32-bit RISC microcontroller provides a cost-ettective and high-pertormance microcontroller solution for laser beam printers (LBP) with PCL/PDL interpreters. To accelerate raster image
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OCR Scan
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16/32-BIT
KS32C6100
0x00000
0xc034
0X00002
0x8034
GPI004
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PDF
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