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Catalog Datasheet	MFG & Type	PDF	Document Tags
sot-223 body marking D K Q F Abstract: No abstract text available Text: O rder th is data sheet by MMFT1N10ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount M M FT1N10ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed	OCR Scan	PDF	MMFT1N10ET1/D OT-223 2PHX33491F-0 N10ET1/D MMFT1N10FT1/D sot-223 body marking D K Q F
Untitled Abstract: No abstract text available Text: b 3 b 7 2 S 4 D10 1 30 1 SDO • MOTb . _ > Order this data sheet MOTOROLA by MMDF2C05E/D S E M IC O N D U C T O R TECHNICAL DATA M edium Pow er Su rfa ce M ount Products MMDF2C05E Com plem entary Half-Bridge T M O S Field Effect T ran sistors Motorola Preferred Device	OCR Scan	PDF	MMDF2C05E/D MMDF2C05E 2PHX31324F-0
221A-06 Abstract: AN569 MTP10N40E 4803 mosfet 4801 MOSFET Text: M O TO RO LA S E M IC O N D U C TO R T E C H N IC A L DATA Designer’s Data Sheet TM O S E -FE T ™ High Energy P o w er FET M T P 10N 40E N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to_ withstand high energy in the avalanche mode and switch efficientlyT	OCR Scan	PDF	MTP10N40E 221A-06 AN569 4803 mosfet 4801 MOSFET
MTP50N06E Abstract: TP50N06E diode 9.1 b3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06E TMOS E-FET™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 50 AMPERES RDS on = 0.025 OHM 60 VOLTS This advanced TMOS E-FET is designed to withstand high	OCR Scan	PDF	15VVGS MTP50N06E 3b72S4 MTP50N06E TP50N06E diode 9.1 b3
12N10E Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP 12N 10E TM O S E-FET™ P o w er Field E ffe c t Tran sisto r M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS on = 0.16 OHM	OCR Scan	PDF
1N10 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ransistor Medium Power Field Effect N-Channel Enhancement Mode Silicon Gate TMOS E-FET “ SOT-223 for Surface Mount M o to ro la P r e fe r re d D e v ic e M E D IU M P O W E R T M O S FET 1 AMP 100 V O LTS T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T	OCR Scan	PDF	OT-223 MMFT1N10E 1N10