i5b2
Abstract: No abstract text available
Text: Preliminary KM23C16005DG CMOS MASK ROM 16M-Blt 2Mx8 /1Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16{word mode) • Fast access time Random Access: 100ns(Max.) Page Access : 30ns(Max.)
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KM23C16005DG
16M-Blt
/1Mx16)
100ns
15QmA
44-SQP-600
KM23C16005DG
KM2SC16005DG-12
KM23C1S00SDG-15
i5b2
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Untitled
Abstract: No abstract text available
Text: 2N2907 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECH N ICA L DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Conpbment to 2N2222 * Collector-Emitter Voltage VCEO=-40V * Collector Dissipation Pc=625mW Ta=25°C * Hjgh Collector Current I c ^ ) =-600mA
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2N2907
2N2222
625mW
-600mA
25ftC
300uS,
-10uA
-10mA
-10vIc
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l200c
Abstract: 25AP ZPB53BL200C
Text: POSITIVE THERMISTORS “Posi-R” • n ic R ic o n For D eg a u ss in g C irc u it in C olor T V Z P B 31B L5R 0R ZPB 31B L7R 0B ZPB45BL100J A Posi-R fo r a d e g a u s s in g c ir c u it in c o lo r TV, u s in g c o m m e r c ia l fre q u e n c y as a p o w e r so u rc e , is a p p lic a b le to e ith e r s in g le -e le m e n t
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ZPB31BL5R0R
ZPB31BL7R0B
ZPB45BL100J
L200C
ZPB46BL300H
18Ap-p
35Ap-p
25Ap-p
20Ap-fi
l200c
25AP
ZPB53BL200C
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750
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QM75DY-HB
QNI750Y-HB
E80276
E80271
QM75DY-HB
15QmAIS
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Bfy51
Abstract: No abstract text available
Text: bTE T> m bbS3T31 DDSTTTD A3D H A P X 11 N AMER PHILIPS/DISCRETE II BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for general purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage open emitter
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bbS3T31
BFY50
BFY51
BFY52
Bfy51
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BFY51
Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100
Text: II b^E J> m bbSB^l □ □2 7 7 ‘iD fl3D IAPX A N AMER PHILIPS/DISCRETE BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 m etal envelopes intended fo r general purpose in d u stria l applications. Q U IC K R E F E R E N C E D A T A
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D277TD
BFY50
BFY51
BFY52
bfy50
BFY51
LT150 LEM
BFY50-BFY51-BFY52
BFY50-BFY51
JFY52
BS944
BFY501
BFY52
J100
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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bc536
Abstract: bc537
Text: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS -s- -i 4; jé . THE BC537» BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM PLEMENTARY TO THE PNP TYPE BC527, BC528
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BC537Â
BC538
BC537,
BC527,
BC528
O-92A
BC537
BC536
100mA
bc536
bc537
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n02a
Abstract: lts 543 series pin diagram n03B
Text: 19-1414; Rev0; 1/99 > k l> JX I> k l Fault-P rotected, High-Voltage S i n g l e 8-to-1 / D u a l 4-to-1 M u l t i p l e x e r s _ F e a t u r e s The MAX4508/MAX4509 are 8-to-1 and dual 4-to-1 faultprotected m ultiplexers that are pin-com patible with the
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400Qnax
MAX4508/MAX4509
n02a
lts 543 series pin diagram
n03B
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BC537
Abstract: BC538 BC527 BC528
Text: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS THE BC537, BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM PLEMENTARY TO THE PNP TYPE BC527, BC528
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BC537,
BC538
BC527,
BC528
O-92A
BC537
100mA
BC527
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smd npn 2n2222
Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.
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2PC1815L
2PC1815
10xx0.
7Z88986
smd npn 2n2222
bf471
BSR62 equivalent
EQUIVALENT TRANSISTOR bc549c
transistor bf 175
transistor bc547 PH in metal detector
tunnel diode
BSY95A
BF470
BC200
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