PVD150-12
Abstract: dc 3phase ac inverter circuit 15KW 15KW igbt 200 A 1200 V thyristor 15KW thyristor inverter
Text: TENTATIVE PIM MODULE PVD150PVD150-12 15KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 400V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage
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PVD150PVD150-12
PVD150-12
dc 3phase ac inverter circuit
15KW
15KW igbt 200 A 1200 V
thyristor 15KW
thyristor inverter
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Gate Turn-off Thyristor 600V 20A
Abstract: INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW PVD150-6 snubber thyristor thyristor 15KW
Text: TENTATIVE PIM MODULE PVD150PVD150-6 15KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage
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PVD150PVD150-6
PVD150-6
Gate Turn-off Thyristor 600V 20A
INVERTER 50 kW
thyristor inverter
igbt 500V 15A
igbt 500V 1A
ac Inverter 10 kw
15KW
snubber thyristor
thyristor 15KW
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SKIIP 32 nab 12 t 49
Abstract: SKiiP 83 AC 12 i t 1 skiip 31 nab 12 t 49 semikron skiip 32 nab 12 Semikron skiip 31 nab 12 semikron skiip 20 nab 12 I T 38 semikron skiip 24 nab 125 t 12 Semikron skiip 22 nab SEMIKRON SKIIP 20 NAB 12 T 17 Semikron skiip 22 neb 063
Text: MiniSKiiP Do it your way MiniSKiiP Technologie • Druckkontaktverbindungen aller Leistungs- und Steueranschlüsse statt gelöteter Kontaktierungen. ■ Integration neuester Chiptechnologie • schaltverlustarme, 600V oder 1200V, homogene NPT IGBTs mit antiparalleler
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D-90253
SKIIP 32 nab 12 t 49
SKiiP 83 AC 12 i t 1
skiip 31 nab 12 t 49
semikron skiip 32 nab 12
Semikron skiip 31 nab 12
semikron skiip 20 nab 12 I T 38
semikron skiip 24 nab 125 t 12
Semikron skiip 22 nab
SEMIKRON SKIIP 20 NAB 12 T 17
Semikron skiip 22 neb 063
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SKIIP 32 nab 12 t 49
Abstract: SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12
Text: MiniSKiiP Do it your way MiniSKiiP Technology • Pressure contact of all power and auxiliary connections instead of soldered joints. ■ Integration of latest chip technology: • Low switching loss, 600V or 1200V, homogeneous NPT IGBTs with antiparallel
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D-90253
SKIIP 32 nab 12 t 49
SKiiP 33 NEC 125 To
skiip 33 ups 063
semikron skiip 24 nab 125 t 12
thyristor firing circuit
SEMIKRON SKIIP 20 NAB 12 T 17
semikron skiip 20 nab 12 I T 38
Semikron skiip 31 nab 12
semikron skiip 81 AN 15 T
semikron skiip 32 nab 12
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SOT-227 lead frame
Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic
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MIL-PRF-19500,
sO-268
O-220
O-220
O-247
O-264
OT-227
SOT-227 lead frame
5kw smps full bridge S.M.P.S
PLAD15KP
APT10026L2FLLG
5kw SMPS full bridge
Fast Recovery Rectifiers mx gp 043
SMBx6.0A
DO215AA
PFC 1.5kw
1.5ke series
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Untitled
Abstract: No abstract text available
Text: Elgar ETS TerraSAS 1kW-1MW 60 V Standalone TerraSAS Photovoltaic Simulator • Low output capacitance 115 • High bandwidth up to 800Hz • High resolution I-V curve simulates static and dynamic conditions 208 400 480 • Designed for high speed Maximum Power Point
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800Hz
60lbs
80lbs
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PM75CVA120
Abstract: E80276
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CVA120 PM75CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CVA120 FEATURE • 3φ 75A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM75CVA120
20kHz
E80276
E80271
PM75CVA120
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E80276
Abstract: PM150CVA060 SCREW TERMINAL BLOCK
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CVA060 PM150CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CVA060 FEATURE • 3φ 150A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM150CVA060
20kHz
E80276
E80271
PM150CVA060
SCREW TERMINAL BLOCK
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E80276
Abstract: PM150CVA060
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CVA060 PM150CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CVA060 FEATURE • 3φ 150A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM150CVA060
20kHz
E80276
E80271
PM150CVA060
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transistor ac51
Abstract: 8 PIN RELAY 24V dc pla MOSFET 1200v 30a 5.1 home theatre assembling SMCV6110 RC snubber thyristor design IGBT ac switch in SSR SKB 7 / 12 PLA relay SMCV6150
Text: Solid state relays celdu ¤ cr elais Scope Heating Plasturgy Furnaces Power supply distribution systems Air conditioning Textile Home heating Infrared heating Drying Thermoforming Etc. Motor starting Pumps Compressors Plasturgy see above Conveyors Fans
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CVA120 PM75CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CVA120 FEATURE • 3φ 75A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM75CVA120
20kHz
E80276
E80271
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E80276
Abstract: PM75CVA120
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CVA120 PM75CVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CVA120 FEATURE • 3φ 75A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic
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PM75CVA120
20kHz
E80276
E80271
PM75CVA120
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PM400DV1A060
Abstract: pm300DV1A120 PM200DV1A120 PM600DV1A060 15KW motor igbt v1 sc 90 servo IGBT MOTOR CONTROL 15KW igbt 600V1200V
Text: Product Information “V1 Series” to Lineup of High Output Intelligent Power Modules PM400DV1A060/PM600DV1A060 PM200DV1A120/PM300DV1A120 PM450DV1A120 -Featuring low power loss and a compact package for motor control systems
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PM400DV1A060/PM600DV1A060
PM200DV1A120/PM300DV1A120
PM450DV1A120
PM400DV1A060
PM600DV1A060
PM200DV1A120
PM300DV1A120
00V/400A,
00V/600A,
PM400DV1A060
pm300DV1A120
PM200DV1A120
PM600DV1A060
15KW motor
igbt v1
sc 90 servo
IGBT MOTOR CONTROL
15KW igbt
600V1200V
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mitsubishi semiconductors type pm75cla120
Abstract: PM75CLA120 375A1200V
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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PM75CLA120
mitsubishi semiconductors type pm75cla120
PM75CLA120
375A1200V
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PM150CBS060
Abstract: igbt module testing
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM150CBS060 PM150CBS060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM150CBS060 FEATURE a Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process.
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PM150CBS060
PM150CBS060
igbt module testing
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PM150CLB060
Abstract: optocoupler fast
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM150CLB060
PM150CLB060
optocoupler fast
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM150CLA060
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM150CLA060
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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PM75CLB120
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11KW 3 phase electric motor
Abstract: 11KW motor PM75CLB120
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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PM75CLB120
11KW 3 phase electric motor
11KW motor
PM75CLB120
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PM75CSD120
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CSD120 PM75CSD120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CSD120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
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PM75CSD120
15kHz
PM75CSD120
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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PM75CLA120
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
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PM75CLB120
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PM150CLA060
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM150CLA060
PM150CLA060
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