Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    15JUL13 Search Results

    15JUL13 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR820DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR820DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7141DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7141DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR818DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR818DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR864DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR864DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS478DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS478DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR802DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR802DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS698DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR808DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR808DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR880DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR880DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR 6 5 4 2 3 PUBLICATION LOC ALL RIGHTS RESERVED. COPYRIGHT - AD By - D IS T REVISIONS 39 LTR R6 PER E C O - 13 - 0 1 14 6 0 PLATED WITH .00 07 62 [.0 000 30] SOLDER PLATED WITH .00 3 8 1 0 [.0 001 5] ALL OVER


    OCR Scan     		15JUL13 PDF