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    TRANSISTOR 15J321

    Abstract: 15j321 RG105
    Text: 15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.


    Original     		PDF GT15J321 TRANSISTOR 15J321 15j321 RG105

    15j321

    Abstract: TRANSISTOR 15J321 2-10R1C GT15J321 RG300A
    Text: 15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 s (typ.


    Original     		PDF GT15J321 15j321 TRANSISTOR 15J321 2-10R1C GT15J321 RG300A

    15j321

    Abstract: TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a
    Text: 15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.


    Original     		PDF GT15J321 15j321 TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a