multispring
Abstract: ASTM-B16 MIL-T-10727
Text: M55-S-NPS Final 10-08:M55 -NPS final revise 8-08 11/20/08 9:23 AM Page 4 MICRO MICROJACKS PINS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors,
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M55-S-NPS
ASTM-B16
QQ-C-533)
MIL-T-10727,
Gold/101
multispring
ASTM-B16
MIL-T-10727
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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awb8230-1603en
Abstract: MMX34AA7D6F0-0 MMX34AA014F0-0 121-398 Transistor MMX34 121-398 MMX34AA5D6F0-0 MMX12AA7D0F0-0 MMX12AA9D6F0-0 MMX12AA3D7F0-0
Text: www.eaton.com www.moeller.net Operating comfort redefined Frequency Inverters M-Max Product Information Frequency Inverter M-Max™ M-Max™ Frequency Inverter System Features The M-Max series frequency inverters allow drives to be adapted easily to customer requirements. With a compact design for assigned motor ratings
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D-53115
W8230-7606en
awb8230-1603en
MMX34AA7D6F0-0
MMX34AA014F0-0
121-398 Transistor
MMX34
121-398
MMX34AA5D6F0-0
MMX12AA7D0F0-0
MMX12AA9D6F0-0
MMX12AA3D7F0-0
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ic 7483 pin configuration
Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6
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PA803T
PA803T
PA803T-T1
2SC4570)
ic 7483 pin configuration
T 427 transistor
TYP 513 309
2SC4570
ts 1683
nec 5261
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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STP4119
Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices
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SG388/D
May-2007
STP4119
Full-bridge SG3525 APPLICATION NOTES
sg3525 application note
mc34063 step up with mosfet
mc34063 step down with mosfet
Full-bridge SG3525
sg3525 pwm INVERTER
MJ2955 300 watts amplifier circuit diagram
MT3336
sg3535a
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pin configuration of ic TL084
Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
Text: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505
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LH2211
LH2311
LM2901
LM3302
HA17339
HA17393
HA17901
HA17903
ULN2001
ULN2002
pin configuration of ic TL084
8085 microprocessor realtime application
uln2004 application note
LM324 battery tester
LM714
blueflash
LM144
LM358 LM311 PIN CONFIGURATION
ic moc3021
LM714 Application Note
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Untitled
Abstract: No abstract text available
Text: IXD1601 Low Input Voltage LDO Regulator with Soft Start The IC consists of a reference voltage source, an error amplifier, a driver transistor, a soft start circuit, an over-current protection circuit, a phase compensation circuit, thermal shutdown, undervoltage lockout, and a load capacitor’s discharge
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IXD1601
IXD1601
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IXD16
Abstract: No abstract text available
Text: IXD1601 Low Input Voltage LDO Regulator with Soft Start The IC consists of a reference voltage source, an error amplifier, a driver transistor, a soft start circuit, an over-current protection circuit, a phase compensation circuit, thermal shutdown, undervoltage lockout, and a load capacitor’s discharge
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IXD1601
IXD1601
IXD16
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MA4T636533
Abstract: transistor sot-23 2613 MA4T6365
Text: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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MA4T6365
MA4T6365
OT-143
MA4T636539
MA4T636533
transistor sot-23 2613
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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d 5072 transistor
Abstract: transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243
Text: IC Testers 70 71 72 73 75 76 77 78 81 82 85 86 89 93 94 95 96 97 98 99 101 102 103 106 107 109 110 147 160 161 162 163 174 175 192 193 194 195 VPL-UICTS Universal IC Tester CMOS ICs MC140 : MC140 FEATURES q Tests most of the 6 to 40 pin ICs in DIP package. The list
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MC140)
MC140
8088/8085/Z80/6502)
OperatN2003
ULN2004
Delhi-110092.
d 5072 transistor
transistor mc140
817 OPTO-coupler
817 OPTO
microprocessor 8255 application seven segment
opto 817
MC140 Datasheet
IC 8155
8282/8283
eprom 8243
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Transistors
Abstract: NPN TRANSISTORS LIST pnp 115 ITT transistors
Text: Page Contents 4 List of Types 5 to 17 Technical Information 19 to 65 Small-Signal Transistors NPN 67 to 113 Small-Signal Transistors (PNP) 115 to 157 DMOS Transistors (N-Channel) 159 to 187 DMOS Transistors (P-Channel) 189 to 193 Darlington Transistors 195 to 199
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all diodes ratings
Abstract: No abstract text available
Text: CONTENTS SMALL-SIGNAL DEVICES Introduction .2 BIPOLAR TRANSISTORS Introduction .26 Datasheets .27
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transistor 2sc 1586
Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5006
2SC5006
transistor 2sc 1586
B 660 TG
TRANSISTOR 2Sc 2525
L 3705
2sc 1364 transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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T0-126 pin configuration
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V
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O-126
BD434,
BD436,
BD438,
BD440
BD442
BD433/435/437/439/441
711DflSb
BD433
T0-126 pin configuration
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R1C11
Abstract: r6c1
Text: Configuration selection generates starting addresses at either zero or 3FFFF, to be compatible with different microprocessor addressing conventions. The Master Serial Mode generates CCLK and receives the configuration data in serial form from configuration data in serial form from a
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613 GB 123 CT
Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT
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uPA803T
/xPA803T
2SC4570)
613 GB 123 CT
transistor NEC D 587
Ic D 1708 ag
513 gb 173 ct
MPA80
nec d 882 p transistor
ic nec 2051
transistor NEC D 882 p
NEC 2561 h
NEC 2561 de
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MA4T636500
Abstract: MA4T6365
Text: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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MA4T6365
MA4T6365
OT-143
MA4T636539
MA4T636500
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26-13 transistor sot-23
Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
Text: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages
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MA4T6365XX
MA4T636535
MA4T636539
OT-143
26-13 transistor sot-23
micro X
Silicon Bipolar Transistor Micro-X Ceramic
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t636
Abstract: 557 sot143 T636 A S 223 858 015 636
Text: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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MA4T6365
MA4T6365
OT-143
MA4T636539
t636
557 sot143
T636 A S
223 858 015 636
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